Effect of Deposition Temperature and Surface Reactions in Atomic Layer Deposition of Silicon Oxide Using Bis(diethylamino)silane and Ozone

Lithium nickelate (LiNiO2) and materials based on it are attractive positive electrode materials for lithium-ion batteries, owing to their large capacity. In this paper, the results of atomic layer deposition (ALD) of lithium–nickel–silicon oxide thin films using lithium hexamethyldisilazide (LiHMDS) and bis(cyclopentadienyl) nickel (II) (NiCp2) as precursors and remote oxygen plasma as a counter-reagent are reported. Two approaches were studied: ALD using supercycles and ALD of the multilayered structure of lithium oxide, lithium nickel oxide, and nickel oxides followed by annealing. The prepared films were studied by scanning electron microscopy, spectral ellipsometry, X-ray diffraction, X-ray reflectivity, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, energy-dispersive X-ray spectroscopy, transmission electron microscopy, and selected-area electron diffraction. The pulse ratio of LiHMDS/Ni(Cp)2 precursors in one supercycle ranged from 1/1 to 1/10. Silicon was observed in the deposited films, and after annealing, crystalline Li2SiO3 and Li2Si2O5 were formed at 800 °C. Annealing of the multilayered sample caused the partial formation of LiNiO2. The obtained cathode materials possessed electrochemical activity comparable with the results for other thin-film cathodes.

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Designing high performance precursors for atomic layer deposition of silicon oxide

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4903275 ◽

2015 ◽

Vol 33 (1) ◽

pp. 01A137 ◽

Cited By ~ 14

Author(s):

Anupama Mallikarjunan ◽

Haripin Chandra ◽

Manchao Xiao ◽

Xinjian Lei ◽

Ronald M. Pearlstein ◽

...

Keyword(s):

Atomic Layer Deposition ◽

High Performance ◽

Silicon Oxide ◽

Atomic Layer ◽

Layer Deposition

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Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

Journal of Materials Research ◽

10.1557/jmr.2004.0426 ◽

2004 ◽

Vol 19 (11) ◽

pp. 3353-3358 ◽

Cited By ~ 108

Author(s):

Titta Aaltonen ◽

Mikko Ritala ◽

Yung-Liang Tung ◽

Yun Chi ◽

Kai Arstila ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Seed Layer ◽

Crystal Orientation ◽

Deposition Temperature ◽

Noble Metals ◽

Film Growth ◽

Atomic Layer ◽

Temperature Limit ◽

Pure Oxygen ◽

Layer Deposition

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

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