Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures

2022 ◽  
Vol 579 ◽  
pp. 152136
Author(s):  
Patrick Fiorenza ◽  
Emanuela Schilirò ◽  
Giuseppe Greco ◽  
Marilena Vivona ◽  
Marco Cannas ◽  
...  
Keyword(s):  
Thin Films ◽  
Time Dependent ◽  
Electron Trapping

Progressive Debonding of Multilayer Interconnect Structures

1997 ◽  
Vol 473 ◽  
Author(s):  
Michael Lane ◽  
Robert Ware ◽  
Steven Voss ◽  
Qing Ma ◽  
Harry Fujimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Crack Growth ◽  
Driving Force ◽  
Adhesion Energy ◽  
Time Dependent ◽  
Multilayer Thin Films ◽  
Processing Conditions ◽  
Interface Morphology ◽  
Entire Sample ◽  
Crack Growth Velocity

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.

scholarly journals Time-Dependent Field Effect in Three-Dimensional Lead-Halide Perovskite Semiconductor Thin Films

2021 ◽  
Author(s):  
Anil Reddy Pininti ◽  
James M. Ball ◽  
Munirah D. Albaqami ◽  
Annamaria Petrozza ◽  
Mario Caironi
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Three Dimensional ◽  
Time Dependent ◽  
Semiconductor Thin Films ◽  
Halide Perovskite ◽  
Lead Halide ◽  
Dependent Field

Time‐Dependent Electrical Transport Properties of Topological Insulator Cr‐Doped Bi 2 Se 3 Thin Films

2019 ◽  
Vol 256 (5) ◽  
pp. 1800735 ◽  
Author(s):  
Qiu Lin Li ◽  
Xing Hua Zhang ◽  
Wen Jie Wang ◽  
Zhi Qing Li ◽  
Ding Bang Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Electrical Transport ◽  
Time Dependent ◽  
Electrical Transport Properties

An SPM study of time dependent crystallization processes in iso-propyl-calix-[6]-arene thin films

2002 ◽  
Vol 5 (1) ◽  
pp. 47-58
Author(s):  
P. Shahgaldian ◽  
P. Goreloff ◽  
R. Lamartine ◽  
A.W. Coleman
Keyword(s):  
Thin Films ◽  
Time Dependent

Transport Phenomena in the Mixed and Normal State of (Bi1.6Pb0.4)Sr2Ca2(Cu1-xFex)3Oy Epitaxial Thin Films

1998 ◽  
Vol 12 (25n26) ◽  
pp. 1081-1088 ◽  
Author(s):  
G. Ilonca ◽  
A. V. Pop ◽  
D. Benea ◽  
C. Lung ◽  
M. Lachescu ◽  
...  
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Normal State ◽  
Landau Theory ◽  
Upper Critical Field ◽  
Time Dependent ◽  
Epitaxial Thin Films ◽  
Critical Temperatures ◽  
Seebeck Coefficients ◽  
Hall Effects

We had performed a study on magnetoresistivity, Seebeck, Nernst and Hall effects in the mixed and normal state for Bi2223 thin films in magnetic fields between 0 and 5 T and in the temperature range 5–300 K. The critical temperatures, the Hall concentration, the Nernst and Seebeck coefficients depend strongly on the iron content in the samples. From our experimental data in the mixed state and fluctuation regime, the upper critical field slope (dBc2/dT )=-2:55 T/K was obtained, corresponding to ab-plane coherence length ξab=14 Å. The experimental data are in agreement with the predictions of the time-dependent Ginsburg–Landau theory.

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