Magnetic force microscopy and cross-sectional transmission electron microscopy of carburised surfaces

Magnetic force microscopy (MFM) has become an important tool in the investigation of the micromagnetic structure of magnetic systems. The interaction of stray magnetic field from a sample with a sharp magnetic tip is measured as the tip is scanned across the surface of the sample. Characterisation of the tip-sample interaction is of paramount importance if the measured signal obtained by MFM is to be put on a quantitative basis. In this paper we describe the preliminary results obtained by studying MFM tips using the Lorentz techniques of transmission electron microscopy.The MFM tips were prepared from 25nm thick Ni wire by an electrolytic etching and polishing technique which produces tips with a sharp apex of radius <100nm. The nature of the tips meant that only the very end of the tips were thin enough to be observed using 200kV electrons in TEM.

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Magnetic vortices in tridimensional nanomagnetic caps observed using transmission electron microscopy and magnetic force microscopy

Physical Review B ◽

10.1103/physrevb.77.224405 ◽

2008 ◽

Vol 77 (22) ◽

Cited By ~ 22

Author(s):

Márcio M. Soares ◽

Emilio de Biasi ◽

Letícia N. Coelho ◽

Maurício C. dos Santos ◽

Fortunato S. de Menezes ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Magnetic Force Microscopy ◽

Magnetic Force ◽

Force Microscopy ◽

Magnetic Vortices ◽

Transmission Electron

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TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.414 ◽

2020 ◽

Vol 1004 ◽

pp. 414-420

Author(s):

Junro Takahashi ◽

Kotaro Kawaguchi ◽

Kazuhiko Kusunoki ◽

Tomoyuki Ueyama ◽

Kazuhito Kamei

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Solution Growth ◽

Spiral Growth ◽

Growth Surface ◽

Vicinal Surface ◽

Cross Sectional ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron

We have studied the microstructure of the growth surface of the 4H-SiC grown by the m-face solution growth. Atomic Force Microscopy (AFM) revealed the micro-striped morphology with the asperity of several nm in the band-like morphology region. The cross-sectional Transmission Electron Microscopy (XTEM) showed that the growth surface consisted of a bunch of nanofacets and vicinal surface. This peculiar morphology is totally different from that of conventional spiral growth on c-face, which can be closely related with the growth mechanism of the m-face solution growth.

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Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.381-382.525 ◽

2008 ◽

Vol 381-382 ◽

pp. 525-528 ◽

Cited By ~ 2

Author(s):

B.L. Wang ◽

Han Huang ◽

Jin Zou ◽

Li Bo Zhou

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Substrate Surface ◽

Transmission Electron Microscopy Analysis ◽

Cross Sectional ◽

Force Microscopy ◽

Si Substrates ◽

Atomic Force ◽

Transmission Electron ◽

Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

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Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.421 ◽

2020 ◽

Vol 1004 ◽

pp. 421-426

Author(s):

Hideki Sako ◽

Kentaro Ohira ◽

Kenji Kobayashi ◽

Toshiyuki Isshiki

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Stacking Faults ◽

Wafer Surface ◽

Cross Sectional ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron ◽

Scanning Transmission ◽

The Difference

Two types of carrot defects with and without a shallow pit were found by mirror projection electron microscopy (MPJ) inspection in 4H-SiC epi wafer. Surface morphology and cross-sectional structure of prismatic stacking faults (PSFs) were investigated using MPJ and atomic force microscopy (AFM), transmission electron microscopy (TEM) and high-resolution scanning transmission electron microscopy (STEM). The depths of the surface grooves due to the PSFs, the stacking sequences around the PSFs and the structure of the Frank-type stacking faults which were connected to the PSFs were different. We discuss the difference between the two types of carrot defects.

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Investigation of the Shape of InGaAs/GaAs Quantum Dots

MRS Proceedings ◽

10.1557/proc-737-e13.40 ◽

2002 ◽

Vol 737 ◽

Cited By ~ 3

Author(s):

Susan Y. Lehman ◽

Alexana Roshko ◽

Richard P. Mirin ◽

John E. Bonevich

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Quantum Dots ◽

Molecular Beam ◽

Length Scale ◽

Cross Sectional ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron ◽

Three Samples

ABSTRACTThree samples of self-assembled In0.44Ga0.56As quantum dots (QDs) grown on (001) GaAs by molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM) and high-resolution transmission electron microscopy (TEM) in order to characterize the height, faceting, and densities of the QDs. The cross-sectional TEM images show both pyramidal dots and dots with multiple side facets. Multiple faceting has been observed only in dots more than 8.5 nm in height and allows increased dot volume without a substantial increase in base area. Addition of a GaAs capping layer is found to increase the diameter of the QDs from roughly 40 nm to as much as 200 nm. The areal QD density is found to vary up to 50 % over the central 2 cm x 2 cm section of wafer and by as much as 23 % on a length scale of micrometers.

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Microstructure of laser-irradiated, conducting Kapton polyimide

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138889 ◽

1995 ◽

Vol 53 ◽

pp. 502-503

Author(s):

D. L. Callahan ◽

Z. Ball ◽

H. M. Phillips ◽

R. Sauerbrey

Keyword(s):

Electron Microscopy ◽

Phase Transition ◽

Transmission Electron Microscopy ◽

Cross Section ◽

Film Surface ◽

Cross Sectional ◽

General Utility ◽

Transmission Electron ◽

Considerable Debate ◽

Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

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Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131760 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1426-1427

Author(s):

F. Shaapur

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Integrated Circuit ◽

Substrate Surface ◽

Homogeneous Material ◽

Material System ◽

Ion Milling ◽

Cross Sectional ◽

Transmission Electron ◽

Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

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TEM Sample Preparation Tricks for Advanced DRAMs

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0318 ◽

2015 ◽

Author(s):

Ching Shan Sung ◽

Hsiu Ting Lee ◽

Jian Shing Luo

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Tem Analysis ◽

Cross Sectional ◽

Transmission Electron ◽

Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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