Temperature dependent transfer characteristics of graphene field effect transistors fabricated using photolithography

2011 ◽  
Vol 11 (3) ◽  
pp. S381-S384 ◽  
Author(s):  
Gunasekaran Venugopal ◽  
S.-J. Kim
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Temperature Dependent ◽  
Transfer Characteristics

scholarly journals Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

Sensors ◽  
2017 ◽  
Vol 17 (7) ◽  
pp. 1640 ◽  
Author(s):  
Alex Tseng ◽  
David Lynall ◽  
Igor Savelyev ◽  
Marina Blumin ◽  
Shiliang Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Transfer Characteristics

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

2013 ◽  
Vol 25 (15) ◽  
pp. 155303 ◽  
Author(s):  
A Di Bartolomeo ◽  
F Giubileo ◽  
L Iemmo ◽  
F Romeo ◽  
S Santandrea ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transfer Characteristics

Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement

2020 ◽  
Vol 1004 ◽  
pp. 620-626
Author(s):  
Hironori Takeda ◽  
Mitsuru Sometani ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Hiroshi Yano ◽  
...  
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Elevated Temperatures ◽  
Field Effect Transistors ◽  
Free Carrier ◽  
Oxide Semiconductor ◽  
Thermal Excitation ◽  
Temperature Dependent ◽  
Conduction Mechanisms ◽  
The Impact

Temperature-dependent Hall effect measurements were conducted to investigate the channel conduction mechanisms of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). This method allows us to discriminate the impact of the density of mobile (free) carriers in the inversion channels and their net mobility on the performance of SiC MOSFETs. It was found that, while the free carrier ratio of SiC MOSFETs with conventional gate oxides formed by dry oxidation is below 4% at 300 K, increasing the free carrier ratio due to thermal excitation of trapped electrons from SiO2/SiC interfaces leads to an unusual improvement in the field-effect mobility of SiC MOSFETs at elevated temperatures. Specifically, a significant increase in free carrier density surpasses the mobility degradation caused by phonon scattering for thermally grown SiO2/SiC interfaces. It was also found that, although nitrogen incorporation in SiO2/SiC interfaces increases the free carrier ratio typically up to around 30%, introduction of an additional scattering factor associated with interface nitridation compensates for the moderate amount of thermally generated mobile carriers at high temperatures, indicating a fundamental drawback of nitridation of SiO2/SiC interfaces. On the basis of these findings, we discuss the channel conduction mechanisms of SiC MOSFETs.

scholarly journals Temperature dependent properties of InSb and InAs nanowire field-effect transistors

2010 ◽  
Vol 96 (15) ◽  
pp. 153505 ◽  
Author(s):  
Henrik A. Nilsson ◽  
Philippe Caroff ◽  
Claes Thelander ◽  
Erik Lind ◽  
Olov Karlström ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Temperature Dependent ◽  
Temperature Dependent Properties

Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis

2008 ◽  
Vol 92 (15) ◽  
pp. 152113 ◽  
Author(s):  
P. Kordoš ◽  
D. Donoval ◽  
M. Florovič ◽  
J. Kováč ◽  
D. Gregušová
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Temperature Dependent
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