Deep-ultraviolet Raman scattering studies of monolayer graphene thin films

Carbon ◽  
2015 ◽  
Vol 81 ◽  
pp. 807-813 ◽  
Author(s):  
Hsiang-Lin Liu ◽  
Syahril Siregar ◽  
Eddwi H. Hasdeo ◽  
Yasuaki Kumamoto ◽  
Chih-Chiang Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Monolayer Graphene ◽  
Deep Ultraviolet

Low-Temperature Growth of Ferroelectric Hf0.5Zr0.5O2 Thin Films Assisted by Deep Ultraviolet Light Irradiation

2021 ◽  
Vol 3 (3) ◽  
pp. 1244-1251
Author(s):  
Hyunjin Joh ◽  
Gopinathan Anoop ◽  
Won-June Lee ◽  
Dipjyoti Das ◽  
Jun Young Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Ultraviolet Light ◽  
Light Irradiation ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Ultraviolet Light Irradiation ◽  
Deep Ultraviolet

scholarly journals Deep-Ultraviolet Transparent Conductive MWCNT/SiO2 Composite Thin Film Fabricated by UV Irradiation at Ambient Temperature onto Spin-Coated Molecular Precursor Film

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1348
Author(s):  
Hiroki Nagai ◽  
Naoki Ogawa ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Uv Irradiation ◽  
Composite Thin Film ◽  
Precursor Film ◽  
Mixed Solution ◽  
Pencil Hardness ◽  
Strong Base ◽  
Deep Ultraviolet

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

2009 ◽  
Vol 255 (19) ◽  
pp. 8252-8256 ◽  
Author(s):  
Thanh Nga Nguyen ◽  
Van Duy Nguyen ◽  
Sungwook Jung ◽  
Junsin Yi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Thin Films

Raman scattering crystalline assessment of polycrystalline Cu2ZnSnS4 thin films for sustainable photovoltaic technologies: Phonon confinement model

2014 ◽  
Vol 70 ◽  
pp. 272-280 ◽  
Author(s):  
M. Dimitrievska ◽  
A. Fairbrother ◽  
A. Pérez-Rodríguez ◽  
E. Saucedo ◽  
V. Izquierdo-Roca
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Phonon Confinement ◽  
Photovoltaic Technologies ◽  
Confinement Model

Raman scattering, emission, and deep defect evolution in ZnO:In thin films

2020 ◽  
Vol 38 (6) ◽  
pp. 063409
Author(s):  
Tetyana Torchynska ◽  
Brahim El Filali ◽  
Juan Antonio Jaramillo Gomez ◽  
Georgiy Polupan ◽  
Jorge Luis Ramírez García ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Deep Defect ◽  
Defect Evolution
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