Temperature-dependent electrical transport properties in graphene/Pb(Zr0.4Ti0.6)O3 field effect transistors

Carbon ◽  
2015 ◽  
Vol 93 ◽  
pp. 384-392 ◽  
Author(s):  
Xiao-Wen Zhang ◽  
Dan Xie ◽  
Jian-Long Xu ◽  
Cheng Zhang ◽  
Yi-Lin Sun ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Transport Properties ◽  
Temperature Dependent

Ambipolar Transport Behaviors in Fullerene Peapod Transistors

2007 ◽  
Vol 121-123 ◽  
pp. 521-524 ◽  
Author(s):  
Ao Guo ◽  
Yun Yi Fu ◽  
Lun Hui Guan ◽  
Zu Jin Shi ◽  
Zhen Nan Gu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Large Percentage ◽  
C60 Fullerene ◽  
Electrical Transport Properties ◽  
Ambipolar Behavior ◽  
Ambipolar Transport

The electrical transport properties of C70 and C60 fullerene peapods are investigated. We report the fabrications and performances of field-effect transistors (FETs) based on C70 and C60 fullerene peapods. A large percentage of the fullerene peapod-FETs we fabricated exhibit ambipolar characteristics with high Ion/Ioff ratio at room temperature in air. The origin of ambipolar behavior is qualitatively discussed.

Electrical transport properties in electroless-etched Si nanowire field-effect transistors

2010 ◽  
Vol 87 (11) ◽  
pp. 2407-2410 ◽  
Author(s):  
Kyeong-Ju Moon ◽  
Ji-Hyuk Choi ◽  
Tae-Il Lee ◽  
Moon-Ho Ham ◽  
Wan-Joo Maeng ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Transport Properties ◽  
Si Nanowire

scholarly journals ELECTRICAL TRANSPORT PROPERTIES AND FIELD EFFECT TRANSISTORS OF CARBON NANOTUBES

NANO ◽  
2006 ◽  
Vol 01 (01) ◽  
pp. 1-13 ◽  
Author(s):  
HONGJIE DAI ◽  
ALI JAVEY ◽  
ERIC POP ◽  
DAVID MANN ◽  
WOONG KIM ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Electrical Transport Properties

This paper presents a review on our recent work on carbon nanotube field effect transistors, including the development of ohmic contacts, high-κ gate dielectric integration, chemical functionalization for conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel length scaling. Due to the importance of high current operations of electronic devices, we also review the high field electrical transport properties of nanotubes on substrates and in freely suspended forms. Owing to their unique properties originating from their crystalline 1D structure and the strong covalent carbon–carbon bonding configuration, carbon nanotubes are highly promising as building blocks for future electronics. They are found to perform favorably in terms of ON-state current density as compared to the existing silicon technology, owing to their superb electron transport properties and compatibility with high-κ gate dielectrics. Future directions and challenges for carbon nanotube-based electronics are also discussed.

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