A general approach was developed to fabricate graphene/semiconducting single-wall carbon nanotube (graphene/s-SWCNT) film Schottky junctions on a large scale. The graphene/s-SWCNT film photodiodes array based on the vertically stacked Schottky junction were fabricated. The all-carbon cross-shaped structure consisted of multielement graphene/s-SWCNT Schottky photodiodes and presented a rich collection of electronics and photonics. The as-fabricated carbon-based photodiode presented an ultra-broadband photodetection characteristic with a high responsivity of 1.75 A/W at near-infrared wavelengths and a fast response rise time of 15 μs. The as-fabricated device clearly showed gate-tunable and wavelength-dependent photoelectric characteristic. Moreover, the corresponding photocurrent excitation spectrum was also demonstrated. In particular, the Si compatible and high throughput fabrication process for the devices made it conducive for large-area multielement optoelectronics devices.
Near-infrared fluorescence as a method for determining single-wall carbon nanotube extraction conditions in aqueous two polymer phase extraction
