Effect of annealing and room temperature sputtering power on optoelectronic properties of pure and Al-doped ZnO thin films

2013 ◽  
Vol 39 (2) ◽  
pp. 1021-1027 ◽  
Author(s):  
D. Podobinski ◽  
S. Zanin ◽  
A. Pruna ◽  
D. Pullini
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Optoelectronic Properties ◽  
Zno Thin Films ◽  
Sputtering Power ◽  
Doped Zno

scholarly journals Ar flow-rate effect for low-resistivity Al/Ti/Al Ohmic contact to n-ZnO thin films

2019 ◽  
Vol 1 (1) ◽  
pp. 23
Author(s):  
Feri Adriyanto
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Substrate Surface ◽  
Rate Effect ◽  
Contact Resistivity ◽  
Zno Thin Films ◽  
Sputtering Power ◽  
Specific Contact ◽  
Doped Zno ◽  
Flow Rate Effect

<p class="Abstract">The Ar flow rate effect on the electrical and optical properties of the sputtered Al-doped ZnO thins films were investigated. It was shown that a strong X-ray peak from (002) and (004) planes is dominant, suggesting that most grains have <em>c</em>-axis perpendicular to the substrate surface. The (002)-ZnO and (004)-ZnO peaks were measured at 2q = 34.12<sup>0</sup>, and 71.85<sup>0</sup>, respectively. It was also found that the growth rate of the Al-doped ZnO thin films increases when the sputtering power is increased. The transmittance of these film are strongly dependent on the sputtering power with the maximum transmittance of 92% was obtained at the sputtering power of 150 W and 50 sccm of Ar flow rate. The resistivity of the films is decreases as the Ar flow rate is increased. The lowest resistivity of 9.74 x 10<sup>-4</sup> W.cm was obtained at the films with Ar flow rate of 80 sccm. The mobility increases with the Ar flow rate increases. The carrier concentration also indicates the same pattern as the mobility. The transmittance of Al-doped ZnO thin films is also strongly dependent on the Ar flow rate. It was also observed the variation of contact resistivity of Al/Ti/Al to Al-doped n-ZnO thin films. The specific contact resistivity <em>r<sub>c</sub></em> of 1.8x10<sup>−5</sup> W.cm<sup>2</sup> was obtained at 150 nm-thick Al.</p>

Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

2015 ◽  
Vol 117 (17) ◽  
pp. 17B901 ◽  
Author(s):  
Yu-Min Hu ◽  
Sih-Sian Li ◽  
Chein-Hsiun Kuang ◽  
Tai-Chun Han ◽  
Chin-Chung Yu
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Annealing Effect ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno

Room-temperature ferromagnetism in n-type Cu-doped ZnO thin films

2007 ◽  
Vol 102 (3) ◽  
pp. 033905 ◽  
Author(s):  
D. L. Hou ◽  
X. J. Ye ◽  
X. Y. Zhao ◽  
H. J. Meng ◽  
H. J. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno

Experimental and ab-initio investigation of the microstructure and optoelectronic properties of FCM–CVD-prepared Al-doped ZnO thin films

2019 ◽  
Vol 125 (9) ◽  
Author(s):  
Ilyass Jellal ◽  
Hassan Ahmoum ◽  
Yassine Khaaissa ◽  
Khalid Nouneh ◽  
Mourad Boughrara ◽  
...  
Keyword(s):  
Thin Films ◽  
Ab Initio ◽  
Optoelectronic Properties ◽  
Zno Thin Films ◽  
Doped Zno

Room-temperature synthesis and optical properties of nanostructured Ba-Doped ZnO thin films

2019 ◽  
Vol 130 ◽  
pp. 321-331 ◽  
Author(s):  
C.C. Okorieimoh ◽  
Ugochi Chime ◽  
Agnes C. Nkele ◽  
Assumpta C. Nwanya ◽  
Itani Given Madiba ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Temperature Synthesis ◽  
Room Temperature Synthesis ◽  
Doped Zno
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