Synthesis and characterization of PTFE/(Na Li1-)0.5Nd0.5TiO3 composites with high dielectric constant and high temperature stability for microwave substrate applications

Alkali-free flat panel display glass is produced in large quantity and has excellent electrical insulating properties at high temperature. Aluminum borosilicate glass with alkaline-earth modifier has low sodium content and low dielectric loss (tan δ <0.1 at 250°C), high dielectric breakdown strength (109 V/m) and excellent high temperature stability. In addition, roll-to-roll processing of thin glass sheet has been demonstrated and glass capacitors that are configured in a coil. Excellent high power capability of these glasses was confirmed by analytical, finite element, and finite difference modeling. The modeling work indicates that a combination of hybrid electrode design and effective heat loss at the interface can further extend power capability of glass capacitors. Alkali-free glass is an ideal candidate material for high temperature capacitors.

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THE STUDY OF HIGH DIELECTRIC CONSTANT MECHANISM OF La-DOPED Ba0.67Sr0.33TiO3 CERAMICS

Surface Review and Letters ◽

10.1142/s0218625x18500567 ◽

2018 ◽

Vol 25 (02) ◽

pp. 1850056

Author(s):

JING XU ◽

BO HE ◽

HAN XING LIU

Keyword(s):

Dielectric Constant ◽

Rare Earth ◽

High Dielectric Constant ◽

Temperature Stability ◽

Current Voltage ◽

Microstructure Model ◽

Bst Ceramics ◽

High Dielectric ◽

Rare Earth La ◽

La Doped

It is a common and effective method to enhance the dielectric properties of BST ceramics by adding rare-earth elements. In this paper, it is important to analyze the cause of the high dielectric constant behavior of La-doped BST ceramics. The results show that proper rare earth La dopant ([Formula: see text]) may greatly increase the dielectric constant of BST ceramics, and also improve the temperature stability, evidently. According to the current–voltage ([Formula: see text]–[Formula: see text]) characteristics, the proper La-doped BST ceramics may reach the better semiconductivity, with the decrease and increase in La doping, the ceramics are insulators. By using the Schottky barrier model and electric microstructure model to find the surface or grain boundary potential barrier height, the width of the depletion layer and grain size do play an important role in impacting the dielectric constant.

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Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors

MRS Proceedings ◽

10.1557/opl.2013.823 ◽

2013 ◽

Vol 1561 ◽

Author(s):

M.A Jithin ◽

Lakshmi Ganapathi Kolla ◽

Navakanta Bhat ◽

S. Mohan ◽

Yuichiro Morozumi ◽

...

Keyword(s):

Dielectric Constant ◽

High Dielectric Constant ◽

Low Dielectric Constant ◽

Si Substrate ◽

Capacitance Density ◽

Low Dielectric ◽

Pulsed Dc ◽

High Dielectric ◽

Mim Capacitors

ABSTRACTIn this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.

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