Molecular dynamics simulation of structural changes in single crystalline silicon nitride nanomembrane

2019 ◽  
Vol 45 (17) ◽  
pp. 23070-23077 ◽  
Author(s):  
Ali K. Shargh ◽  
Niaz Abdolrahim
Keyword(s):  
Molecular Dynamics ◽  
Silicon Nitride ◽  
Molecular Dynamics Simulation ◽  
Structural Changes ◽  
Crystalline Silicon ◽  
Dynamics Simulation ◽  
Single Crystalline Silicon ◽  
Single Crystalline

scholarly journals Etching Characteristics of SixNy Film on Textured Single Crystalline Silicon Surface Using Ar/CF4 and He/CF4 Surface-Discharge Plasma

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 563
Author(s):  
Toshiyuki Hamada ◽  
Shunsuke Masuda ◽  
Kazuki Nishida ◽  
Soma Yamamoto
Keyword(s):  
Silicon Nitride ◽  
Applied Voltage ◽  
Silicon Surface ◽  
Discharge Plasma ◽  
Crystalline Silicon ◽  
Surface Discharge ◽  
Etching Time ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Carrier Gas

In this study, we investigated the characteristics of electrode grooves formed by etching silicon nitride (SixNy) films using surface-discharge plasma under Ar/CF4 and He/CF4 gases on the basis of differences in the widths of the electrode grooves etched on the SixNy film. The widths of the grooves etched using Ar as the carrier gas were narrower than those etched using He, and the etching speed achieved using Ar was higher than that achieved using He. Furthermore, the electrode groove created by surface-discharge plasma gradually widened as etching time and applied voltage increased.

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