Etching Characteristics of SixNy Film on Textured Single Crystalline Silicon Surface Using Ar/CF4 and He/CF4 Surface-Discharge Plasma
Keyword(s):
In this study, we investigated the characteristics of electrode grooves formed by etching silicon nitride (SixNy) films using surface-discharge plasma under Ar/CF4 and He/CF4 gases on the basis of differences in the widths of the electrode grooves etched on the SixNy film. The widths of the grooves etched using Ar as the carrier gas were narrower than those etched using He, and the etching speed achieved using Ar was higher than that achieved using He. Furthermore, the electrode groove created by surface-discharge plasma gradually widened as etching time and applied voltage increased.
2006 ◽
Vol 45
(5A)
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pp. 3992-3993
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2006 ◽
Vol 16
(3)
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pp. 387-394
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2019 ◽
Vol 514
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pp. 49-53
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2019 ◽
Vol 583
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pp. 123999
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2019 ◽
Vol 45
(17)
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pp. 23070-23077
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2007 ◽
Vol 111
(16)
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pp. 4156-4160
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2012 ◽
Vol 512-515
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pp. 106-109
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Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer
2013 ◽
Vol 58
(2)
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pp. 142-150
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