Reduced metal contamination from crucible and coating using a silicon nitride based diffusion barrier for the growth of cast quasi-single crystalline silicon ingots

2019 ◽  
Vol 514 ◽  
pp. 49-53 ◽  
Author(s):  
Franziska Wolny ◽  
Andreas Krause ◽  
Matthias Müller ◽  
Gerd Fischer ◽  
Holger Neuhaus
Keyword(s):  
Silicon Nitride ◽  
Diffusion Barrier ◽  
Metal Contamination ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline

scholarly journals Etching Characteristics of SixNy Film on Textured Single Crystalline Silicon Surface Using Ar/CF4 and He/CF4 Surface-Discharge Plasma

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 563
Author(s):  
Toshiyuki Hamada ◽  
Shunsuke Masuda ◽  
Kazuki Nishida ◽  
Soma Yamamoto
Keyword(s):  
Silicon Nitride ◽  
Applied Voltage ◽  
Silicon Surface ◽  
Discharge Plasma ◽  
Crystalline Silicon ◽  
Surface Discharge ◽  
Etching Time ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Carrier Gas

In this study, we investigated the characteristics of electrode grooves formed by etching silicon nitride (SixNy) films using surface-discharge plasma under Ar/CF4 and He/CF4 gases on the basis of differences in the widths of the electrode grooves etched on the SixNy film. The widths of the grooves etched using Ar as the carrier gas were narrower than those etched using He, and the etching speed achieved using Ar was higher than that achieved using He. Furthermore, the electrode groove created by surface-discharge plasma gradually widened as etching time and applied voltage increased.

Synthesis and Optical Properties of Single-Crystalline Silicon Nitride Nanowires with Controlled Dimensionality

2012 ◽  
Vol 512-515 ◽  
pp. 106-109 ◽  
Author(s):  
Zhi Hao Wang ◽  
Fei Chen ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Particle Size ◽  
Silicon Nitride ◽  
Crystalline Silicon ◽  
Average Particle Size ◽  
Nanocrystalline Silicon ◽  
Average Particle ◽  
Single Crystalline Silicon ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Uv Lamp

Single-crystalline silicon nitride nanowires with high purity, controlled dimensionality have been prepared via nitriding the nanocrystalline silicon powders at 1300°C~1400°C. The nanocrystalline silicon powders with average particle size of 20-80nm were obtained by cryomilling with the liquid nitrogen as the medium. Scanning electron microscopy, high resolution transmitted electron microscope, X-ray diffraction and UV-lamp microzone Raman spectrometer were used to characterize the as-synthesized nanowires. The effects of nitridation process (reaction temperature and holding time) and the particle size of nanocrystalline silicon powders on the phase and microstructure of the silicon nitride nanowires were analyzed. The obtained results show that the diameter of the nanowires can be controlled in the range of 40~100nm, and the length of 10~80 μm. The formation of the nanowires can be explained by the vapor-solid growth mechanism. The room temperature photoluminescence spectra show that the silicon nitride nanowires exhibit a broad visible emission band which ranges from 370 nm to 700 nm.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Dynamic Crack Propagation in Single-Crystalline Silicon

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch
Keyword(s):  
Crack Propagation ◽  
Crystalline Silicon ◽  
Potential Drop ◽  
Tensile Tests ◽  
Terminal Velocity ◽  
Dynamic Crack Propagation ◽  
Dynamic Crack ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Crack Propagation Velocity

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.

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