scholarly journals Modeling of atomistic scale shear failure of Ag/MgO interface with misfit dislocation network

2019 ◽  
Vol 170 ◽  
pp. 109151 ◽  
Author(s):  
X.Q. Fu ◽  
L.H. Liang ◽  
Y.G. Wei
Author(s):  
K.P.D. Lagerlöf ◽  
A.H. Heuer ◽  
T.E. Mitchell

It has been reported by Lally et. al. [1] that precipitates of hematite (Fe2O3, space group R3c) in a matrix of ilmenite (FeTiO3, space group R3) are lens shaped and flattened along the [0001]-direction. The coherency across the interface is lost by the introduction of a misfit dislocation network, which minimizes the strain due to the deviation in lattice parameters between the two phases [2]. The purpose of this paper is to present a new analysis of this network.


2020 ◽  
Vol 208 ◽  
pp. 112863
Author(s):  
Hwanhui Yun ◽  
Abhinav Prakash ◽  
Bharat Jalan ◽  
Jong Seok Jeong ◽  
K. Andre Mkhoyan

1985 ◽  
Vol 92 (2) ◽  
pp. 379-390 ◽  
Author(s):  
V. I. Vdovin ◽  
L. A. Matveeva ◽  
G. N. Semenova ◽  
M. Ya. Skorohod ◽  
Yu. A. Tkhorik ◽  
...  

2001 ◽  
Vol 686 ◽  
Author(s):  
S.H. Christiansen ◽  
P.M. Mooney ◽  
J.O. Chu ◽  
A. Grill

AbstractStrain relaxation in He+-implanted and annealed Si(001)/Si1−xGex heterostructures was investigated using transmission electron microscopy techniques and x-ray diffraction. Depending on the implant conditions, bubbles and/or platelets form below the Si/Si1−xGex interface upon annealing and act as nucleation sources for dislocation loops. The dislocation loops extend to the interface and form a misfit dislocation network there, resulting in relaxation of 30-80% of the strain in layers as thin as 100-300 nm. When bubbles form close to the interface, dislocations nucleate by a climb loop mechanism. When smaller bubbles form deeper in the Si substrate an irregular three-dimensional dislocation network forms below the interface resulting in an irregular misfit dislocation network at the interface. When platelets form deeper in the Si substrate, prismatic punching of dislocation loops is observed and dislocation reactions of misfit dislocations at the interface result in Lomer dislocation formation.


1992 ◽  
Vol 280 ◽  
Author(s):  
M. Albrecht ◽  
H. P. Strunk ◽  
P. O. Hansson ◽  
E. Bauser

ABSTRACTThe accommodation of misfit stresses during heteroepitaxial growth of Ge0.85Si0.15 on Si(110) from In solution is studied by transmission electron microscopy. The regular misfit dislocation network forms at the interface and can be explained by glide of dislocations in a secondary a/2<110>{311} glide system. The occurrence of this secondary glide system is analyzed in terms of a mechanical equilibrium analysis that includes a frictional force due to a static Peierls barrier.


Author(s):  
Yasushi Sanada ◽  
Hong Liu ◽  
Suguru Suzuki ◽  
Momoko Iizuka ◽  
Susumu Takahashi ◽  
...  

This study investigates fundamental behavior of reinforced concrete (RC) shear walls with vertically aligned openings through laboratory tests and numerical analyses. A series of structural tests was conducted using scaled models representing typical multistory RC shear walls in Japan. Three 1/6 scale shear wall specimens were designed and manufactured with different opening configurations: W0 with no opening, W1 with single-aligned openings, and W2 with double-aligned openings. The specimens were subjected to static cyclic lateral loads. The W1 and W2 specimens with openings failed with concrete crushing at the wall bottom and shear failure of the beams above openings, while the W0 failed in shear. The maximum strengths were 318 kN, 145 kN, and 93 kN for the W0, W1, and W2 specimens, respectively; hence, the experimental strength reduction factors due to the openings were 0.46 and 0.29 for the W1 and W2. These results were simulated by FEM analyses mainly to investigate detailed behavior of the components of the W1 and W2 specimens. The analytical results, in particular the maximum strengths and failure patterns, agreed well with the experimental results. It was numerically verified that high compression was applied to the wall bottom with the tensile boundary column and the beams above openings, as observed during the tests, which should be considered in practical design for this type of wall.


2008 ◽  
Vol 77 (8) ◽  
Author(s):  
P. Torelli ◽  
E. A. Soares ◽  
G. Renaud ◽  
L. Gragnaniello ◽  
S. Valeri ◽  
...  

2013 ◽  
Vol 19 (3) ◽  
pp. 706-715 ◽  
Author(s):  
Yuanyuan Zhu ◽  
Chengyu Song ◽  
Andrew M. Minor ◽  
Haiyan Wang

AbstractHeterostructures and interfacial defects in a 40-nm-thick SrTiO3 (STO) film grown epitaxially on a single-crystal MgO (001) were investigated using aberration-corrected scanning transmission electron microscopy and geometric phase analysis. The interface of STO/MgO was found to be of the typical domain-matching epitaxy with a misfit dislocation network having a Burgers vector of ½ aSTO ⟨100⟩. Our studies also revealed that the misfit dislocation cores at the heterogeneous interface display various local cation arrangements in terms of the combination of the extra-half inserting plane and the initial film plane. The type of the inserting plane, either the SrO or the TiO2 plane, alters with actual interfacial conditions. Contrary to previous theoretical calculations, the starting film planes were found to be dominated by the SrO layer, i.e., a SrO/MgO interface. In certain regions, the starting film planes change to the TiO2/MgO interface because of atomic steps at the MgO substrate surface. In particular, four basic misfit dislocation core configurations of the STO/MgO system have been identified and discussed in relation to the substrate surface terraces and possible interdiffusion. The interface structure of the system in reverse—MgO/STO—is also studied and presented for comparison.


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