scholarly journals In-silico pace-mapping using a detailed whole torso model and implanted electronic device electrograms for more efficient ablation planning

2020 ◽  
Vol 125 ◽  
pp. 104005
Author(s):  
Sofia Monaci ◽  
Marina Strocchi ◽  
Cristobal Rodero ◽  
Karli Gillette ◽  
John Whitaker ◽  
...  
Keyword(s):  
In Silico ◽  
Electronic Device ◽  
Torso Model ◽  
Pace Mapping

scholarly journals In silico pace-mapping: prediction of left vs. right outflow tract origin in idiopathic ventricular arrhythmias with patient-specific electrophysiological simulations

EP Europace ◽  
2020 ◽  
Vol 22 (9) ◽  
pp. 1419-1430
Author(s):  
Ruben Doste ◽  
Rafael Sebastian ◽  
Juan Francisco Gomez ◽  
David Soto-Iglesias ◽  
Alejandro Alcaine ◽  
...  
Keyword(s):  
In Silico ◽  
Ventricular Arrhythmias ◽  
Correlation Coefficients ◽  
Outflow Tract ◽  
Patient Specific ◽  
Mapping Technique ◽  
Mapping Procedure ◽  
Non Invasive ◽  
Operative Planning ◽  
Pace Mapping

Abstract Aims A pre-operative non-invasive identification of the site of origin (SOO) of outflow tract ventricular arrhythmias (OTVAs) is important to properly plan radiofrequency ablation procedures. Although some algorithms based on electrocardiograms (ECGs) have been developed to predict left vs. right ventricular origins, their accuracy is still limited, especially in complex anatomies. The aim of this work is to use patient-specific electrophysiological simulations of the heart to predict the SOO in OTVA patients. Methods and results An in silico pace-mapping procedure was designed and used on 11 heart geometries, generating for each case simulated ECGs from 12 clinically plausible SOO. Subsequently, the simulated ECGs were compared with patient ECG data obtained during the clinical tachycardia using the 12-lead correlation coefficient (12-lead ρ). Left ventricle (LV) vs. right ventricle (RV) SOO was estimated by computing the LV/RV ratio for each patient, obtained by dividing the average 12-lead ρ value of the LV- and RV-SOO simulated ECGs, respectively. Simulated ECGs that had virtual sites close to the ablation points that stopped the arrhythmia presented higher correlation coefficients. The LV/RV ratio correctly predicted LV vs. RV SOO in 10/11 cases; 1.07 vs. 0.93 P < 0.05 for 12-lead ρ. Conclusion The obtained results demonstrate the potential of the developed in silico pace-mapping technique to complement standard ECG for the pre-operative planning of complex ventricular arrhythmias.

Electronic Cone Illumination with the Conventional Transmission Electron Microscope

1977 ◽  
Vol 35 ◽  
pp. 72-73
Author(s):  
William Krakow
Keyword(s):  
Electronic Device ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Hollow Cone ◽  
Transmission Electron ◽  
Lissajous Figures ◽  
High Resolution Images ◽  
Imaging Mode ◽  
Diffraction Patterns ◽  
Transmission Microscope

An electronic device has been constructed which manipulates the primary beam in the conventional transmission microscope to illuminate a specimen under a variety of virtual condenser aperture conditions. The device uses the existing tilt coils of the microscope, and modulates the D.C. signals to both x and y tilt directions simultaneously with various waveforms to produce Lissajous figures in the back-focal plane of the objective lens. Electron diffraction patterns can be recorded which reflect the manner in which the direct beam is tilted during exposure of a micrograph. The device has been utilized mainly for the hollow cone imaging mode where the device provides a microscope transfer function without zeros in all spatial directions and has produced high resolution images which are also free from the effect of chromatic aberration. A standard second condenser aperture is employed and the width of the cone annulus is readily controlled by defocusing the second condenser lens.

Resistance Monitor and Control for Vacuum Evaporation of Metals and Carbon

1976 ◽  
Vol 34 ◽  
pp. 572-573
Author(s):  
Russell L. Steere ◽  
Eric F. Erbe ◽  
J. Michael Moseley
Keyword(s):  
Electronic Device ◽  
Point Sources ◽  
High Contrast ◽  
Variable Resistor ◽  
Quality Of Results ◽  
Low Contrast ◽  
Evaporation Source ◽  
And Control ◽  
At Will

We have designed and built an electronic device which compares the resistance of a defined area of vacuum evaporated material with a variable resistor. When the two resistances are matched, the device automatically disconnects the primary side of the substrate transformer and stops further evaporation.This approach to controlled evaporation in conjunction with the modified guns and evaporation source permits reliably reproducible multiple Pt shadow films from a single Pt wrapped carbon point source. The reproducibility from consecutive C point sources is also reliable. Furthermore, the device we have developed permits us to select a predetermined resistance so that low contrast high-resolution shadows, heavy high contrast shadows, or any grade in between can be selected at will. The reproducibility and quality of results are demonstrated in Figures 1-4 which represent evaporations at various settings of the variable resistor.

Digital image processing methods applied to the study of annealing time on semiconductor-metal eutectic composites

1988 ◽  
Vol 46 ◽  
pp. 848-849
Author(s):  
J. Hefter
Keyword(s):  
Image Processing ◽  
Digital Image Processing ◽  
Digital Image ◽  
Electronic Device ◽  
Processing System ◽  
Average Diameter ◽  
Eutectic Solidification ◽  
Metal Silicide ◽  
The Matrix ◽  
Microscopic Studies

Semiconductor-metal composites, formed by the eutectic solidification of silicon and a metal silicide have been under investigation for some time for a number of electronic device applications. This composite system is comprised of a silicon matrix containing extended metal-silicide rod-shaped structures aligned in parallel throughout the material. The average diameter of such a rod in a typical system is about 1 μm. Thus, characterization of the rod morphology by electron microscope methods is necessitated.The types of morphometric information that may be obtained from such microscopic studies coupled with image processing are (i) the area fraction of rods in the matrix, (ii) the average rod diameter, (iii) an average circularity (roundness), and (iv) the number density (Nd;rods/cm2). To acquire electron images of these materials, a digital image processing system (Tracor Northern 5500/5600) attached to a JEOL JXA-840 analytical SEM has been used.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

A systematic review with in silico analysis on transcriptomic profile of gallbladder carcinoma

2020 ◽  
Vol 47 (6) ◽  
pp. 398-408
Author(s):  
Sonam Tulsyan ◽  
Showket Hussain ◽  
Balraj Mittal ◽  
Sundeep Singh Saluja ◽  
Pranay Tanwar ◽  
...  
Keyword(s):  
Systematic Review ◽  
Gallbladder Carcinoma ◽  
In Silico ◽  
In Silico Analysis ◽  
Transcriptomic Profile ◽  
Silico Analysis

Common and well-documented Allele List: unverzichtbares Hilfsmittel für die moderne HLA-Typisierung

2019 ◽  
Vol 9 (04) ◽  
pp. 241-245
Author(s):  
Nils Lachmann ◽  
Diana Stauch ◽  
Axel Pruß
Keyword(s):  
In Silico ◽  
Regionale Unterschiede

ZusammenfassungDie Typisierung der humanen Leukozytenantigene (HLA) vor Organ- und hämatopoetischer Stammzelltransplantation zur Beurteilung der Kompatibilität von Spender und Empfänger wird heutzutage in der Regel molekulargenetisch mittels Amplifikation, Hybridisierung oder Sequenzierung durchgeführt. Durch die exponentiell steigende Anzahl an neu entdeckten HLA-Allelen treten vermehrt Mehrdeutigkeiten, sogenannte Ambiguitäten, in der HLA-Typisierung auf, die aufgelöst werden müssen, um zu einem eindeutigen Ergebnis zu gelangen. Mithilfe kategorisierter Allelfrequenzen (häufig, gut dokumentiert und selten) in Form von CWD-Allellisten (CWD: common and well-documented) ist die In-silico-Auflösung von Ambiguitäten durch den Ausschluss seltener Allele als mögliches Ergebnis realisierbar. Ausgehend von einer amerikanischen CWD-Liste existieren derzeit auch eine europäische, deutsche und chinesische CWD-Liste, die jeweils regionale Unterschiede in den Allelfrequenzen erkennbar werden lassen. Durch die Anwendung von CWD-Allelfiltern in der klinischen HLA-Typisierung können Zeit, Kosten und Arbeitskraft eingespart werden.

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