Revealing the multi hydrogen bonding state within iron doped amorphous carbon

To enhance a nucleation rate of diamond particles, hydrogenated amorphous carbon (a-C: H) intermediate layers have been formed by radio frequency plasma chemical vapor deposition (CVD) on silicon substrates prior to diamond deposition by hot filament CVD, and the effect of a-C: H intermediate layers on the nucleation and growth rate of diamond particles is studied by varying the thickness of a-C: H films. It is found that diamond particles are well synthesized on thin a-C: H intermediate layers and the nucleation density and growth rate are decreased with increasing the thickness of a-C: H films. Atomic force microscope observations show that a-C: H intermediate layers with rough surface are more effective than the smooth surface for diamond synthesis. Raman spectroscopy shows that the bonding state of carbon atoms in a-C: H films does not change by varying the thickness of a-C: H films. It is proposed that diamond nucleation is affected by the surface morphology rather than the bonding state of carbon atoms in a-C: H films.

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Studies on the structure and bonding state of nitric amorphous carbon (a-CNx) films by reactive rf magnetron sputtering

Thin Solid Films ◽

10.1016/s0040-6090(00)01363-8 ◽

2000 ◽

Vol 377-378 ◽

pp. 320-325 ◽

Cited By ~ 10

Author(s):

Hae-Suk Jung ◽

Hyung-Ho Park

Keyword(s):

Magnetron Sputtering ◽

Amorphous Carbon ◽

Rf Magnetron Sputtering ◽

Bonding State ◽

Structure And Bonding ◽

Cnx Films ◽

Reactive Rf Magnetron Sputtering

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Study of first electronic transition and hydrogen bonding state of ultra-thin water layer of nanometer thickness on an α-alumina surface by far-ultraviolet spectroscopy

Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy ◽

10.1016/j.saa.2017.12.029 ◽

2018 ◽

Vol 197 ◽

pp. 133-137

Author(s):

Takeyoshi Goto ◽

Tomoya Kinugasa

Keyword(s):

Hydrogen Bonding ◽

Electronic Transition ◽

Water Layer ◽

Ultraviolet Spectroscopy ◽

Alumina Surface ◽

Bonding State ◽

Far Ultraviolet ◽

Nanometer Thickness

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Characterization and electrochemical properties of iron-doped tetrahedral amorphous carbon (ta-C) thin films

RSC Advances ◽

10.1039/c8ra04719g ◽

2018 ◽

Vol 8 (46) ◽

pp. 26356-26363 ◽

Cited By ~ 4

Author(s):

Jarkko Etula ◽

Niklas Wester ◽

Sami Sainio ◽

Tomi Laurila ◽

Jari Koskinen

Keyword(s):

Thin Films ◽

Electrochemical Properties ◽

Amorphous Carbon ◽

Tetrahedral Amorphous Carbon ◽

Surface Iron ◽

Iron Doped ◽

Carbon Surfaces

Surface iron levels as low as 0.4 at% (XPS) can considerably change the electrochemical properties of initially inert carbon surfaces.

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The Influence of Interface Silicon Oxide Layer on Photovoltaic Effect of Iron-Doped Amorphous Carbon Film/SiO2/Si Based Heterostructure

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.535-537.2071 ◽

2012 ◽

Vol 535-537 ◽

pp. 2071-2074

Author(s):

Rong Li ◽

Xin Yu Tan ◽

Yue Hua Huang ◽

Yuan Liu ◽

Qin Qin Liu

Keyword(s):

Oxide Layer ◽

Amorphous Carbon ◽

Silicon Oxide ◽

Photovoltaic Effect ◽

Short Circuit ◽

Carbon Film ◽

Amorphous Carbon Film ◽

Silicon Oxide Layer ◽

Iron Doped ◽

The Impact

This paper studied the impact of silicon oxide layer on photovoltaic characteristic of iron-doped amorphous carbon film/silicon heterojunction (a-C:Fe/Si). The results show that a native SiO2 layer on the silicon surface can provide a significant improvement of the a-C:Fe/Si devices’ photovoltaic performances, especially for the short circuit current and fill factor. This improvement partly may be attributed to the electron recombination process is suppressed and the interface is modified by the SiO2 film based on the open circuit voltage decay measurement.

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