Liftoff of single crystal diamond by epitaxial lateral overgrowth using SiO2 masks

2020 ◽  
Vol 101 ◽  
pp. 107606
Author(s):  
Matthias Schreck ◽  
Michael Mayr ◽  
Michael Weinl ◽  
Martin Fischer ◽  
Stefan Gsell
Keyword(s):  
Single Crystal ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Single Crystal Diamond

scholarly journals Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3006
Author(s):  
Qiang Wei ◽  
Xiaofan Zhang ◽  
Fang Lin ◽  
Ruozheng Wang ◽  
Genqiang Chen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Cross Sections ◽  
Microwave Plasma ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Optical Microscope ◽  
Epitaxial Lateral Overgrowth ◽  
Plasma Chemical Vapor Deposition ◽  
Lateral Overgrowth ◽  
Single Crystal Diamond

Two types of a trench with conventional vertical and new reverse-V-shaped cross-sections were fabricated on single crystal diamond (SCD) substrate using a micro-jet water-assisted laser. In addition, a microwave plasma chemical vapor deposition device was used to produce multiple micrometer-sized channels using the epitaxial lateral overgrowth technique. Raman and SEM methods were applied to analyze both types of growth layer characterization. The hollowness of the microchannels was measured using an optical microscope. According to the findings, the epitaxial lateral overgrowth layer of the novel reverse-V-shaped trench produced improved SCD surface morphology and crystal quality.

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

1998 ◽  
Vol 537 ◽  
Author(s):  
Zhonghai Yu ◽  
M.A.L. Johnson ◽  
J.D. Brown ◽  
N.A. El-Masry ◽  
J. F. Muth ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Growth Processes ◽  
Mbe Growth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Movpe Growth ◽  
Gan Film ◽  
Growth Experiments

AbstractThe epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 2 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800°C to 1120°C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990°C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence

1998 ◽  
Vol 3 ◽  
Author(s):  
Zhonghai Yu ◽  
M.A.L. Johnson ◽  
T. Mcnulty ◽  
J.D. Brown ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Strain Field ◽  
Deep Level ◽  
Green Emission ◽  
Epitaxial Lateral Overgrowth ◽  
Sem Images ◽  
Lateral Overgrowth ◽  
New Material ◽  
Scanning Electron

Growth of GaN by MOVPE on mismatched substrates such as sapphire or SiC produces a columnar material consisting of many hexagonal grains ~1 μm across. In contrast, the epitaxial-lateral-overgrowth (ELO) process creates a new material — single-crystal GaN. We have studied the ELO process using GaN/sapphire layers patterned with SiO2 stripes. SEM images show that the (0001) GaN surface remains very flat as the ELO progresses. Cathodoluminescence images at 590 nm reveal spotty yellow-green emission from the columnar GaN as it emerges from the window areas. Very bright 590 nm emission occurs as the ELO process begins. We associate this deep-level cathodoluminescence with the strain field that accompanies the conversion of columnar GaN into single-crystal GaN via the ELO process. As the ELO process continues across the SiO2 stripes, the 590 nm emission disappears and is replaced with pure band edge cathodoluminescence at 365 nm which is maintained until coalescence of adjacent ELO layers occurs near the centers of the SiO2 stripes.

Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth

1998 ◽  
Vol 189-190 ◽  
pp. 67-71 ◽  
Author(s):  
Takumi Shibata ◽  
Hiroki Sone ◽  
Katsunori Yahashi ◽  
Masahito Yamaguchi ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Bulk Single Crystal ◽  
High Quality ◽  
Lateral Overgrowth

scholarly journals Fabrication of Micron Scale Three-Dimensional Single Crystal Diamond Channel: by Micro-Jet Water-Assist Laser

2021 ◽  
Author(s):  
Qiang Wei ◽  
Xiaofan Zhang ◽  
Fang Lin ◽  
Ruozheng Wang ◽  
Genqiang Chen ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Optical Microscope ◽  
Epitaxial Lateral Overgrowth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Lateral Overgrowth ◽  
Single Crystal Diamond ◽  
Micrometer Size

Two types of trenches cross-section in conventional vertical and brand new reverse-V-shape have fabricated on SCD substrate by micro-jet water-assist laser, the epitaxial lateral overgrowth technique has applied by microwave plasma chemical vapor deposition system in forming multiple micrometer-size channels. Raman and SEM techniques have applied in analyze both types growth layer characterization. Optical microscope has used to test microchannels hollowness. As a result, with the brand new reverse-V-shape trench, epitaxial lateral overgrowth layer reaches higher SCD surface morphology and crystal quality.

scholarly journals Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

1999 ◽  
Vol 4 (S1) ◽  
pp. 447-452
Author(s):  
Zhonghai Yu ◽  
M.A.L. Johnson ◽  
J.D. Brown ◽  
N.A. El-Masry ◽  
J. F. Muth ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Growth Processes ◽  
Mbe Growth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Movpe Growth ◽  
Gan Film ◽  
Growth Experiments

The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 20 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800 °C to 1120 °C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990 °C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

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