scholarly journals Reaction degree of composition B explosive with multi-layered compound structure protection subjected to detonation loading

2020 ◽  
Author(s):  
Jia-yun Liu ◽  
Yong-xiang Dong ◽  
Xuan-yi An ◽  
Ping Ye ◽  
Qi-tian Sun ◽  
...  
Languages ◽  
2021 ◽  
Vol 6 (2) ◽  
pp. 65
Author(s):  
Junko Ito ◽  
Armin Mester

This paper investigates the role recursive structures play in prosody. In current understanding, phonological phrasing is computed by a general syntax–prosody mapping algorithm. Here, we are interested in recursive structure that arises in response to morphosyntactic structure that needs to be mapped. We investigate the types of recursive structures found in prosody, specifically: For a prosodic category κ, besides the adjunctive type of recursion κ[κ x], κ[x κ], is there also the coordinative type κ[κ κ]? Focusing on the prosodic forms of compounds in two typologically rather different languages, Danish and Japanese, we encounter three types of recursive word structures: coordinative ω[ω ω], left-adjunctive ω[f ω], right-adjunctive ω[ω f] and the strictly layered compound structure ω[f f]. In addition, two kinds of coordinative φ-compounds are found in Japanese, one with a non-recursive (strictly layered) structure φ[ω ω], a mono-phrasal compound consisting of two words, and one with coordinative recursion φ[φ φ], a bi-phrasal compound. A cross-linguistically rare type of post-syntactic compound has this biphrasal structure, a fact to be explained by its sentential origin.


2009 ◽  
Vol 19 (06) ◽  
pp. 1931-1949 ◽  
Author(s):  
QIGUI YANG ◽  
KANGMING ZHANG ◽  
GUANRONG CHEN

In this paper, a modified generalized Lorenz-type system is introduced, which is state-equivalent to a simple and special form, and is parameterized by two parameters useful for chaos turning and system classification. More importantly, based on the parameterized form, two classes of new chaotic attractors are found for the first time in the literature, which are similar but nonequivalent in topological structure. To further understand the complex dynamics of the new system, some basic properties such as Lyapunov exponents, Hopf bifurcations and compound structure of the attractors are analyzed and demonstrated with careful numerical simulations.


2011 ◽  
Vol 47 (10) ◽  
pp. 2399-2402 ◽  
Author(s):  
Yong Liu ◽  
Chengde Tong ◽  
Jingang Bai ◽  
Shuang Yu ◽  
Weiming Tong ◽  
...  

2018 ◽  
Vol 233 (6) ◽  
pp. 361-370 ◽  
Author(s):  
Anna-Lena Hansen ◽  
Bastian Dietl ◽  
Martin Etter ◽  
Reinhard K. Kremer ◽  
David C. Johnson ◽  
...  

Abstract Results of combined synchrotron X-ray diffraction and pair distribution function experiments performed on the layered compound CrTe3 provide evidence for a short range structural distortion of one of the two crystallographically independent CrTe6 octahedra. The distortion is caused by higher mobility of one crystallographically distinct Te ion, leading to an unusual large Debye Waller factor. In situ high temperature X-ray diffraction investigations show an initial crystallization of a minor amount of elemental Te followed by decomposition of CrTe3 into Cr5Te8 and Te. Additional experiments provide evidence that the Te impurity (<1%) cannot be avoided. Analyses of structural changes in the temperature range 100–754 K show a pronounced anisotropic expansion of the lattice parameters. The differing behavior of the crystal axes is explained on the basis of structural distortions of the Cr4Te16 structural building units. An abrupt distortion of the structure occurs at T≈250 K, which then remains nearly constant down to 100 K. The structural distortion affects the spin exchange interactions between Cr3+ cations. A significant splitting between field-cooled (fc) and zero-field-cooled (zfc) magnetic susceptibility is observed below about 200 K. Applying a small external magnetic field results in a substantial spontaneous magnetization, reminiscent of ferro- or ferrimagnet exchange interactions below ~240 K. A Debye temperature of ~150 K was extracted from heat capacity measurements.


2008 ◽  
Vol 77 (Suppl.C) ◽  
pp. 40-43 ◽  
Author(s):  
Parasharam M. Shirage ◽  
Kiichi Miyazawa ◽  
Hijiri Kito ◽  
Hiroshi Eisaki ◽  
Akira Iyo

1998 ◽  
Vol 416 (1-2) ◽  
pp. 295-304 ◽  
Author(s):  
A.B.M.O. Islam ◽  
K. Asai ◽  
K.K. Lim ◽  
T. Tambo ◽  
C. Tatsuyama

2016 ◽  
Vol 242 ◽  
pp. 38-46 ◽  
Author(s):  
Linda Pastero ◽  
Rossella Arletti ◽  
Fernando Cámara ◽  
Lara Gigli ◽  
Monica Cagnoni

1989 ◽  
Vol 149 ◽  
Author(s):  
G. H. Bauer ◽  
C. E. Nebel ◽  
M. B. Schubert ◽  
G. Schumm

ABSTRACTOptical and transport studies of both cb- and vb-tail states in a-Si1−xGex:H such as subband absorption (PDS), instationary photocurrent experiments (TOF, PTS) for electrons and holes, Modulated Photocurrent Spectroscopy (MPS), and Raman scattering have been performed. The main consequences of Ge-alloying into the a-Si:H network are i) an increase in cb-tail state density at the conduction band edge and in the exponential cb- tail even for small x (O<x<0.3), accompanied by ii) a rise in deep cb-tail and midgap states which to some extent can be reduced by appropriate deposition methods; iii) at the valence band side up to x≈0.3 the tail seems not to be affected at all and for 0.3<x<0.9 the vb-tail obviously can be kept similar to that of a-Si:H (Evo≈(50–60) meV). Halfwidths of Raman TO-like modes point to the existence of a rigid Si-network in O<x<0.3 in which Ge is incorporated and to a transition at x>0.35 into a Si-Ge compound structure with maximum disorder at x≈0.5.


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