Isoindigo-based fluorinated low band gap polymers for environmentally stable field effect transistor

2016 ◽  
Vol 133 ◽  
pp. 333-338 ◽  
Author(s):  
Jea Woong Jo ◽  
Jong H. Kim ◽  
Jae Woong Jung
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Band Gap ◽  
Low Band Gap Polymers ◽  
Effect Transistor ◽  
Stable Field

Dicyanovinyl-substituted indolo[3,2-b]indole derivatives: low-band-gap π-conjugated molecules for a single-component ambipolar organic field-effect transistor

2016 ◽  
Vol 4 (40) ◽  
pp. 9460-9468 ◽  
Author(s):  
Illhun Cho ◽  
Sang Kyu Park ◽  
Boseok Kang ◽  
Jong Won Chung ◽  
Jin Hong Kim ◽  
...  
Keyword(s):  
Band Gap ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Intramolecular Charge Transfer ◽  
Indole Derivatives ◽  
Conjugated Molecules ◽  
Low Band Gap ◽  
Cooperative Effects ◽  
Effect Transistor

Via the cooperative effects of intramolecular charge transfer interactions and extension of conjugation, low-band gap organic semiconductors have successfully been prepared.

Band gap engineered nano perforated graphene microstructures for field effect transistor

2016 ◽  
Author(s):  
Penchalaiah Palla ◽  
Durgesh Laxman Tiwari ◽  
Hasan Raza Ansari ◽  
Taraprasanna Saha Babu ◽  
Anita Sagadevan Ethiraj ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Field-Effect Transistor and Photo-Transistor of Narrow-Band-Gap Nanocrystal Arrays Using Ionic Glasses

Nano Letters ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 3981-3986 ◽  
Author(s):  
Charlie Gréboval ◽  
Ulrich Noumbe ◽  
Nicolas Goubet ◽  
Clément Livache ◽  
Julien Ramade ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Narrow Band ◽  
Effect Transistor ◽  
Ionic Glasses

Importance of Solubilizing Group and Backbone Planarity in Low Band Gap Polymers for High Performance Ambipolar field-effect Transistors

2012 ◽  
Vol 24 (7) ◽  
pp. 1316-1323 ◽  
Author(s):  
Joong Suk Lee ◽  
Seon Kyoung Son ◽  
Sanghoon Song ◽  
Hyunjung Kim ◽  
Dong Ryoul Lee ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Band Gap ◽  
Low Band Gap Polymers

Ultra-wide band gap AlGaN polarization-doped field effect transistor

2018 ◽  
Vol 57 (7) ◽  
pp. 074103 ◽  
Author(s):  
Andrew M. Armstrong ◽  
Brianna A. Klein ◽  
Albert Colon ◽  
Andrew A. Allerman ◽  
Erica A. Douglas ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Wide Band Gap ◽  
Effect Transistor

scholarly journals Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Jangyup Son ◽  
Soogil Lee ◽  
Sang Jin Kim ◽  
Byung Cheol Park ◽  
Han-Koo Lee ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Wide Band ◽  
Monolayer Graphene ◽  
Wide Band Gap ◽  
Effect Transistor

Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

2015 ◽  
Vol 3 (17) ◽  
pp. 4235-4238 ◽  
Author(s):  
Chang-Soo Park ◽  
Yu Zhao ◽  
Yoon Shon ◽  
Im Taek Yoon ◽  
Cheol Jin Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Ferromagnetic Semiconductor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

We report a ferromagnetic graphene field-effect transistor with a band gap.

Sign in / Sign up

Export Citation Format

Share Document