Simple Cleaning and Conditioning of Silicon Surfaces with UV/Ozone Sources

ABSTRACTInitial oxidation process of silicon in UV/ozone ambient has been monitored using a multi-wavelength, in-situ spectroscopic ellipsometry. Ozone gas was chemically formed by photochemical reaction of oxygen under ulUmviolet illuimination. The oxide growth was monitored for hydrogenated silicon surfaces as functions of oxygen gas flow rate, gas pressure and wafer temperature. Initial oxidation rates were very high at almost all the temperatures. The oxidation rate was 0.2 nm/min about ten times higher than that for thermal oxidation without UV light at low temperatures. The accelerated oxidation was probably due to an electric field effect on the oxidation of back-bond silicon by active oxygen atoms included in the ozone gas.

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Transmission Electron Microscopy Study of UV-ozone Cleaned Silicon Surfaces for Application in High Efficiency Photovoltaics

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc40753.2019.8980798 ◽

2019 ◽

Author(s):

Haider Ali ◽

Munan Gao ◽

Ngwe Zin ◽

Sara Bakhshi ◽

Winston V. Schoenfeld ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

High Efficiency ◽

Microscopy Study ◽

Electron Microscopy Study ◽

Silicon Surfaces ◽

Transmission Electron Microscopy Study ◽

Transmission Electron ◽

Uv Ozone

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Enhancing the power generation of Rhodopseudomonas palustris-based MFC

International Journal of Applied Electromagnetics and Mechanics ◽

10.3233/jae-209444 ◽

2020 ◽

Vol 64 (1-4) ◽

pp. 1261-1268

Author(s):

Shu Otani ◽

Dang-Trang Nguyen ◽

Kozo Taguchi

Keyword(s):

Activated Carbon ◽

Rhodopseudomonas Palustris ◽

Ozone Treatment ◽

Maximum Power Density ◽

On Demand ◽

Long Time ◽

Dry Conditions ◽

Carbon Sheet ◽

Uv Ozone

In this study, a portable and disposable paper-based microbial fuel cell (MFC) was fabricated. The MFC was powered by Rhodopseudomonas palustris bacteria (R. palustris). An activated carbon sheet-based anode pre-loaded organic matter (starch) and R. palustris was used. By using starch in the anode, R. palustris-loaded on the anode could be preserved for a long time in dry conditions. The MFC could generate electricity on-demand activated by adding water to the anode. The activated carbon sheet anode was treated by UV-ozone treatment to remove impurities and to improve its hydrophilicity before being loaded with R. palustris. The developed MFC could generate the maximum power density of 0.9 μW/cm2 and could be preserved for long-term usage with little performance degradation (10% after four weeks).

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OBSERVATION OF NONLOCAL QUANTUM STATES ON SILICON SURFACES AT ROOM TEMPERAUTRE

Materials of the VIII All-Russian Scientific and Technical Conference "EXCHANGE OF EXPERIENCE IN THE FIELD OF CREATION OF ULTRA BAND RADIO ELECTRONIC SYSTEMS" ◽

10.25206/978-5-8149-3074-3-215-226 ◽

2020 ◽

Author(s):

N. A. Torkhov ◽

◽

Keyword(s):

Quantum States ◽

Silicon Surfaces ◽

Nonlocal Quantum

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Detection of Oxygen on Silicon Surfaces by Time-of-Flight Type Electron-Stimulated Desorption Spectroscopy.

Shinku ◽

10.3131/jvsj.38.418 ◽

1995 ◽

Vol 38 (3) ◽

pp. 418-420

Author(s):

Kazuyuki UEDA ◽

Kohji MURANO

Keyword(s):

Time Of Flight ◽

Silicon Surfaces ◽

Electron Stimulated Desorption

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Development of Backside Scanning Capacitance Microscopy Technique for Advanced SOI Microprocessors

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0094 ◽

2006 ◽

Author(s):

Vinod Narang ◽

P. Muthu ◽

J.M. Chin ◽

Vanissa Lim

Keyword(s):

Plasma Etching ◽

Data Interpretation ◽

Parameters Optimization ◽

Scanning Capacitance Microscopy ◽

Microscopy Technique ◽

Thermal Oxide ◽

Specific Analysis ◽

Thin Oxide ◽

P Type ◽

Uv Ozone

Abstract Implant related issues are hard to detect with conventional techniques for advanced devices manufactured with deep sub-micron technology. This has led to introduction of site-specific analysis techniques. This paper presents the scanning capacitance microscopy (SCM) technique developed from backside of SOI devices for packaged products. The challenge from backside method includes sample preparation methodology to obtain a thin oxide layer of high quality, SCM parameters optimization and data interpretation. Optimization of plasma etching of buried oxide followed by a new method of growing thin oxide using UV/ozone is also presented. This oxidation method overcomes the limitations imposed due to packaged unit not being able to heat to high temperature for growing thermal oxide. Backside SCM successfully profiled both the n and p type dopants in both cache and core transistors.

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