Critical Dimension of a Circular Heat and Solute Source for an Optimum Transfer within Square Porous Enclosures

The information available from an SEM image is limited both by the inherent signal to noise ratio that characterizes the image and as a result of the transformations that it may undergo as it is passed through the amplifying circuits of the instrument. In applications such as Critical Dimension Metrology it is necessary to be able to quantify these limitations in order to be able to assess the likely precision of any measurement made with the microscope.The information capacity of an SEM signal, defined as the minimum number of bits needed to encode the output signal, depends on the signal to noise ratio of the image - which in turn depends on the probe size and source brightness and acquisition time per pixel - and on the efficiency of the specimen in producing the signal that is being observed. A detailed analysis of the secondary electron case shows that the information capacity C (bits/pixel) of the SEM signal channel could be written as :

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Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0091 ◽

2016 ◽

Author(s):

Jungil Mok ◽

Byungki Kang ◽

Daesun Kim ◽

Hongsun Hwang ◽

Sangjae Rhee ◽

...

Keyword(s):

Electric Field ◽

Electrostatic Potential ◽

Critical Dimension ◽

Data Retention ◽

Signal Line ◽

Adjacent Node ◽

Storage Node ◽

Retention Characteristics ◽

Node Voltage ◽

The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

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TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0305 ◽

2011 ◽

Author(s):

Liew Kaeng Nan ◽

Lee Meng Lung

Keyword(s):

Sample Preparation ◽

Semiconductor Device ◽

Ion Beam ◽

Critical Dimension ◽

Low Energy ◽

Ex Situ ◽

Good Image Quality ◽

Ion Beam Etching ◽

Device Structures ◽

Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

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