Effects of different monosaccharides on thermal stability of phycobiliproteins from Oscillatoria sp. (BTA-170): Analysis of kinetics, thermodynamics, colour and antioxidant properties

2021 ◽  
Vol 44 ◽  
pp. 101354
Author(s):  
Ramesh Sharma ◽  
Pinku Chandra Nath ◽  
Kondi Vanitha ◽  
Onkar Nath Tiwari ◽  
Tarun Kanti Bandyopadhyay ◽  
...  
Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4369
Author(s):  
Swarup Roy ◽  
Jong-Whan Rhim

Curcumin incorporated poly(butylene adipate-co-terephthalate) (PBAT) based film was fabricated. Curcumin has uniformly distributed in the PBAT matrix to form a bright yellow PBAT/curcumin film. The PBAT/curcumin film has slightly reduced tensile strength and flexibility than the neat PBAT film, while the thermal stability of the film has not changed significantly. The blending of curcumin significantly decreased the water vapor permeability of the PBAT film. Additionally, the PBAT/curcumin film showed potent antioxidant activity with some antimicrobial activity. The PBAT/curcumin films with improved water vapor barrier and additional functions can be used for active packaging applications.


2020 ◽  
Vol 10 (3) ◽  
pp. 279-285
Author(s):  
Julyleth P.J. Macias ◽  
Ricardo I. Castro ◽  
Saray K.G. Esguerra ◽  
Jaime G. Marin ◽  
Luis Guzman ◽  
...  

Background: Eugenol is a phenolic compound with a wide spectrum of biological activities such as antibacterial and antioxidant. Objective: Eugenol is an ideal candidate as a natural antioxidant additive, especially for those substances that are affected by lipoperoxidation process, this is the case of essential oils that have an important role in the food, perfumery and pharmaceutical industries, which easily deteriorate under high temperature, strong light, and reactive oxygen species. Methods: In order to evidence the influence of the addition of eugenol in the thermal properties of Hedychium coronarium Koening essential oil, were determined the chemical composition, antioxidant properties and TG/DTG analysis after the supplementation with different ratios of eugenol/essential oil. Results: The results showed a high content of oxygenated monoteropenes (50.33%), followed by monoterpene hydrocarbons (23.35%) and sesquiterpene (19.2%), the TG/DTG analysis presented a significant increment in the degradation temperature of the essential oil, being the major value 12 ºC at a supplementation of 4.7% (v/v) of eugenol. Conclusion: Finally, the supplementation with eugenol improved the thermal stability of the essential oil of Hedychium coronarium Koening, which could be applicable to other oils thereby improving their physicochemical properties.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

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