scholarly journals A Review on the GaN-on-Si Power Electronic Devices

Author(s):  
Yaozong Zhong ◽  
Jinwei Zhang ◽  
Shan Wu ◽  
Lifang Jia ◽  
Xuelin Yang ◽  
...  
2015 ◽  
Vol 242 ◽  
pp. 417-420 ◽  
Author(s):  
Michael Knetzger ◽  
Elke Meissner ◽  
Joff Derluyn ◽  
Marianne Germain ◽  
Jochen Friedrich

The influence of structural defects in the active layer of GaN-on-Si substrates on the vertical leakage current was studied. The structural defects were analyzed by analytical scanning electron microscopy by means of cathodoluminescence (CL). The leakage current was determined by vertical I-V measurements.Two possibilities were found, which give potential explanations for the variations of the vertical leakage current: i) Threading dislocations, which may partially form leakage paths, were detected by CL imaging. ii) Variations of the carbon doping, which is used to tune GaN to a semi insulating material were revealed by CL spectroscopy.


Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4176 ◽  
Author(s):  
Chaoqun Jiao ◽  
Juan Zhang ◽  
Zhibin Zhao ◽  
Zuoming Zhang ◽  
Yuanliang Fan

With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents. However, the currents in these power electronic devices are transient. For example, the uneven currents and internal chip currents overshoot, which may occur when turning on and off, and could have a great impact on the device. In order to study the reliability of these power electronics devices, this paper proposes a miniature printed circuit board (PCB) Rogowski coil that measures the current of these power electronics devices without changing their internal structures, which provides a reference for the subsequent reliability of their designs.


Energies ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4654
Author(s):  
Andrzej Wetula ◽  
Andrzej Bień ◽  
Mrunal Parekh

Measurements of medium and high voltages in a power grid are normally performed with large and bulky voltage transformers or capacitive dividers. Besides installation problems, these devices operate in a relatively narrow frequency band, which limits their usability in modern systems that are saturated with power electronic devices. A sensor that can be installed directly on a wire and can operate without a galvanic connection to the ground may be used as an alternative voltage measurement device. This type of voltage sensor can complement current sensors installed on a wire, forming a complete power acquisition system. This paper presents such a sensor. Our sensor is built using two dielectric elements with different permeability coefficients. A finite element method simulation is used to estimate the parameters of a constructed sensor. Besides simulations, a laboratory model of a sensor was built and tested in a medium-voltage substation. Our results provide a proof of concept for the presented sensor. Some errors in voltage reconstruction have been traced to an oversimplified data acquisition and transmission system, which has to be improved during the further development of the sensor.


Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1717
Author(s):  
Camilo Andrés Ordóñez ◽  
Antonio Gómez-Expósito ◽  
José María Maza-Ortega

This paper reviews the basics of series compensation in transmission systems through a literature survey. The benefits that this technology brings to enhance the steady state and dynamic operation of power systems are analyzed. The review outlines the evolution of the series compensation technologies, from mechanically operated switches to line- and self-commutated power electronic devices, covering control issues, different applications, practical realizations, and case studies. Finally, the paper closes with the major challenges that this technology will face in the near future to achieve a fully decarbonized power system.


2021 ◽  
Author(s):  
Yu Wang ◽  
Leigang Nie ◽  
Yongnan Dang ◽  
Gaofeng Deng ◽  
Jiangwei Li ◽  
...  

Author(s):  
Ronald H. W. Hoppe ◽  
Svetozara Petrova ◽  
Volker Schulz

2012 ◽  
Vol 178 ◽  
pp. 217-222 ◽  
Author(s):  
Johannes Kuipers ◽  
Harry Bruning ◽  
Simon Bakker ◽  
Huub Rijnaarts

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