Role of defect structure on hydrogenation properties of Zr 0.9 Ti 0.1 V 2 alloy

2011 ◽  
Vol 36 (15) ◽  
pp. 9318-9323 ◽  
Author(s):  
X.W. Yang ◽  
J.S. Li ◽  
T.B. Zhang ◽  
R. Hu ◽  
X.Y. Xue ◽  
...  
Keyword(s):  
1975 ◽  
Vol 97 (1) ◽  
pp. 134-141 ◽  
Author(s):  
R. N. Wright ◽  
A. T. Male

The fine surface defect structure of commercial EC grade aluminum magnet wire has been characterized and four basic component types have been identified. A grading system has been established for each of the component defects. Intermediate process surface characterization studies and laboratory drawing experiments have been performed to clarify the origin of the defects. The potential role of drawing lubrication in repairing or compounding the defect structure has been demonstrated and the mechanics of a drawing related repair process have been clarified through study of the effects of rod drawing on hardness indentations.


2006 ◽  
Vol 522-523 ◽  
pp. 129-138 ◽  
Author(s):  
Stephen Osgerby ◽  
A. Tony Fry

Three commercial martensitic steels have been oxidised in steam at 600 and 650 °C for times up to 10000 h. The partition of minor elements within the oxide scales has been determined. Silicon forms an additional oxide layer beneath the spinel. Chromium, molybdenum and tungsten concentrate in the spinel and manganese is present in both the spinel and magnetite. Several proposed mechanisms for steam oxidation have been examined to explain the observed effects of alloy composition. Modification of the oxide defect structure and oxidant gas penetration through microcracks were identified as the mechanisms most able to explain the influence of alloy composition.


1980 ◽  
Vol 2 ◽  
Author(s):  
A. G. CULLIS

ABSTRACTThe pulse processing techniques that have assumed prominence over the past few years offer various important advantages for device fabrication technology. However, the usefulness of each individual method depends substantially upon the specific annealing mechanism involved. This article demonstrates the role of electron microscopy in elucidating such mechanisms and in analysing annealed semiconductor structures of importance to both research workers and semiconductor technologists. The range of laser and electron beam pulse annealing methods is covered and defect structure transitions observed are related to the solid and liquid phase processes occurring. Characteristic impurity trapping and segregation phenomena are described.


RSC Advances ◽  
2019 ◽  
Vol 9 (28) ◽  
pp. 15772-15779
Author(s):  
Aoni Xu ◽  
Chaofang Dong ◽  
Xin Wei ◽  
Xiaogang Li ◽  
Digby D. Macdonald

The destructive role of chloride ions on the defect structure of barrier layers (bl) is vitally important for understanding the initial breakdown of passive films on metals.


1994 ◽  
Vol 29 (7) ◽  
pp. 1701-1706 ◽  
Author(s):  
T. S. Bartnitskaya ◽  
M. V. Vlasova ◽  
N. G. Kakazei ◽  
T. V. Tomila

2020 ◽  
Vol 300 ◽  
pp. 107-134
Author(s):  
Somrerk Chandra-ambhorn ◽  
Patthranit Wongpromrat ◽  
Thammaporn Thublaor ◽  
Walairat Chandra-ambhorn

This chapter primarily reviews the nature of water vapour when it presents in bulk gas. The change in a ratio between water vapour and corresponding dissociated hydrogen, which determine the thermodynamic stability of the oxide formation, is analysed when the oxidation kinetics are linear and parabolic. When water vapour reaches the solid/gas interface, chromium species volatilisation and oxidation controlled by surface reaction can occur. The adsorbed water vapour can be further incorporated into the oxide possibly in the form of hydrogen defects. The role of these defects on altering the defect structure of the oxide is discussed. Finally, characteristics of the oxide scale on stainless steels formed in the atmosphere containing water vapour are reviewed.


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