Effects of alloy compositions on hydrogen behaviors at a nickel grain boundary and a coherent twin boundary

2020 ◽  
Vol 45 (18) ◽  
pp. 10951-10961
Author(s):  
Jun Hui ◽  
Guo Yang ◽  
Min Liu ◽  
Wenguan Liu ◽  
Biao Wang
Keyword(s):  
Grain Boundary ◽  
Twin Boundary ◽  
Coherent Twin Boundary

In situ observation of multiple parallel (1 1 1) twin boundary formation from step-like grain boundary during Si solidification

2020 ◽  
Vol 13 (10) ◽  
pp. 105501
Author(s):  
Kuan-Kan Hu ◽  
Kensaku Maeda ◽  
Keiji Shiga ◽  
Haruhiko Morito ◽  
Kozo Fujiwara
Keyword(s):  
Grain Boundary ◽  
Twin Boundary ◽  
In Situ Observation ◽  
Boundary Formation

The Stepwise Cross-sectional Crystalline Analysis of the Stress Induced Voiding in Cu Interconnect

2006 ◽  
Vol 914 ◽  
Author(s):  
Hyo-Jong Lee ◽  
Heung Nam Han ◽  
Suk Hoon Kang ◽  
Jeong-Yun Sun ◽  
Kyu Hwan Oh
Keyword(s):  
Grain Boundary ◽  
Twin Boundary ◽  
Triple Junction ◽  
Hydrostatic Stress ◽  
Electron Backscattered Diffraction ◽  
Cross Sectional ◽  
Copper Interconnect ◽  
Crystallographic Study ◽  
Cu Interconnect ◽  
Planar Electron

AbstractIn a crystallographic study of stress induced voiding of copper interconnect, the planar electron backscattered diffraction analysis showed that the void was initiated at the triple junction of the grain boundaries, not at the junction of the twin boundary and grain boundary. By using stepwise cross-sectional crystalline investigation for the void, it was possible to rebuild 3D crystalline structure near the void. From the stress calculation based on the measured crystalline structures, the hydrostatic stress was highly concentrated at the triple junction of the twin boundary and grain boundary, but experimentally, there was no voiding at that. The voiding in the copper interconnect may depend mainly on the boundary instability.

scholarly journals In situ atomic scale mechanisms of strain-induced twin boundary shear to high angle grain boundary in nanocrystalline Pt

2018 ◽  
Vol 195 ◽  
pp. 69-73 ◽  
Author(s):  
Lihua Wang ◽  
Jiao Teng ◽  
Yu Wu ◽  
Xuechao Sha ◽  
Sisi Xiang ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Twin Boundary ◽  
Atomic Scale ◽  
High Angle ◽  
Boundary Shear

Mechanism of Stress-Driven Grain Boundary Migration in Nanotwinned Materials

2018 ◽  
Vol 55 (1) ◽  
pp. 21-25 ◽  
Author(s):  
N.V. Skiba
Keyword(s):  
Theoretical Model ◽  
Grain Boundary ◽  
Twin Boundary ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
High Angle ◽  
Twin Boundaries ◽  
Critical Stresses ◽  
Ultrafine Grained ◽  
Ultrafine Grained Materials

Abstract Stress-driven grain boundary (GB) migration in ultrafine-grained materials with nanotwinned structure is theoretically described. In the framework of the theoretical model, the stress-driven high-angle GB migration is accompanied by migration of twin boundaries which adjoin this GB. Energetic characteristics and critical stresses of the GB migration accompanied by the twin boundary migration are calculated.

DFT study of hydrogen and helium defects at the (112̄1) twin boundary in hcp scandium

2017 ◽  
Vol 31 (11) ◽  
pp. 1750080
Author(s):  
Kaimin Fan ◽  
Jing Tang ◽  
Li Yang ◽  
Yongqing Hu ◽  
Qingqiang Sun ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Twin Boundary ◽  
Density Functional ◽  
Nearest Neighbor ◽  
Boundary Energy ◽  
Boundary Plane ◽  
Octahedral Interstice ◽  
Tetrahedral Interstice ◽  
Densities Of States ◽  
Formation Energies

We have investigated the grain boundary energy of ([Formula: see text]) twin boundaries, the formation energies of hydrogen (H) and helium (He) defects in tetrahedral (T) and octahedral (O) interstitial sites at the ([Formula: see text]) twin boundary in hcp scandium (Sc) by first-principles calculations based on density functional theory. It is found that the formation energies of the tetrahedral and octahedral interstices H, and tetrahedral interstice He increase significantly towards the ([Formula: see text]) twin boundary plane, while the formation energy of the octahedral interstice He atom near the ([Formula: see text]) twin boundary plane decreases. To analyze these results, we present the electronic densities of states (DOSs) of H, He and their nearest-neighbor Sc (NN-Sc) atoms in several tetrahedral and octahedral configurations. We have also calculated the formation energies of He-vacancy clusters (He[Formula: see text]V) in the Sc grain boundary, which indicates the stabilities of He[Formula: see text]V clusters depend on the variations of the relaxed vacancy volume near the ([Formula: see text]) twin boundary plane.

The Morphology of Grain Boundary Interactions with Twins in YBa2Cu3O7−δ

1993 ◽  
Vol 319 ◽  
Author(s):  
Jenn-Yue Wang ◽  
A. H. King
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Twin Boundary ◽  
Interfacial Energy ◽  
Coincidence Site Lattice ◽  
The Other ◽  
Twin Boundaries ◽  
Site Lattice ◽  
Dislocation Arrays

AbstractVarious morphologies are observed where twins meet grain boundaries in YBa2Cu3O7−δ. Twins may be “correlated” at the boundary (i.e. twin boundaries from one grain may meet a twin boundary from the other grain in a quadruple junction) and the twins may be narrowed or “constricted” at the boundary. These effects are determined by the interfacial energy. We estimate the energy of the various interfaces by determining the dislocation arrays they contain, using the constrained coincidence site lattice (CCSL) model and Bollmann's O2-lattice formalism. Our approach indicates that there are significant changes in the energy of the interfaces and is thus able to explain the variety of observed morphologies.

Atomic and Electronic Structure Analysis of Σ=3, 9 and 27 Boundary, and Multiple Junction in β-SiC

1999 ◽  
Vol 589 ◽  
Author(s):  
K. Tanaka ◽  
M. Kohyama
Keyword(s):  
Electronic Structure ◽  
Energy Loss ◽  
Twin Boundary ◽  
Structural Unit ◽  
High Resolution Electron Microscopy ◽  
Coherent Twin Boundary ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractThe atomic structures of σ=3, 9 and 27 boundaries, and multiple junctions in β-SiC were studied by high-resolution electron microscopy (HREM). Especially, the existence of the variety of structures of σ=3 incoherent twin boundaries and σ=27 boundary was shown by HREM. The structures of σ=3, 9 and 27 boundary were explained by structural unit models. Electron energy-loss spectroscopy (EELS) was used to investigate the electronic structure of grain boundaries. The spectra recorded from bulk, {111}σ=3 coherent twin boundary (CTB) and {1211}σ=3 incoherent twin boundary (ITB) did not show significant differences. Especially, the energy-loss corresponding to carbon 1s-to Φ* transition was not found. It indicates that C atoms exist at grain boundary on the similar condition of bulk

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