The Stepwise Cross-sectional Crystalline Analysis of the Stress Induced Voiding in Cu Interconnect

AbstractIn a crystallographic study of stress induced voiding of copper interconnect, the planar electron backscattered diffraction analysis showed that the void was initiated at the triple junction of the grain boundaries, not at the junction of the twin boundary and grain boundary. By using stepwise cross-sectional crystalline investigation for the void, it was possible to rebuild 3D crystalline structure near the void. From the stress calculation based on the measured crystalline structures, the hydrostatic stress was highly concentrated at the triple junction of the twin boundary and grain boundary, but experimentally, there was no voiding at that. The voiding in the copper interconnect may depend mainly on the boundary instability.

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STUDY OF THE GRAIN BOUNDARY MIGRATION IN A TRICRISTAL PURE ICE WITH BUBBLES

Anales AFA ◽

10.31527/analesafa.2019.30.3.47 ◽

2019 ◽

Vol 30 (3) ◽

pp. 47-51

Author(s):

P.I. Achával ◽

C. L. Di Prinzio

Keyword(s):

Monte Carlo ◽

Grain Boundary ◽

Numerical Simulations ◽

Triple Junction ◽

Boundary Migration ◽

Optical Microscope ◽

Physical Parameters ◽

Grain Boundary Migration

In this paper the migration of a grain triple junction in apure ice sample with bubbles at -5°C was studied for almost 3hs. This allowed tracking the progress of the Grain Boundary (BG) and its interaction with the bubbles. The evolution of the grain triple junction was recorded from successive photographs obtained witha LEICA® optical microscope. Simultaneously, numerical simulations were carried out using Monte Carlo to obtain some physical parameters characteristic of the BG migration on ice.

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In situ observation of multiple parallel (1 1 1) twin boundary formation from step-like grain boundary during Si solidification

Applied Physics Express ◽

10.35848/1882-0786/abb57d ◽

2020 ◽

Vol 13 (10) ◽

pp. 105501

Author(s):

Kuan-Kan Hu ◽

Kensaku Maeda ◽

Keiji Shiga ◽

Haruhiko Morito ◽

Kozo Fujiwara

Keyword(s):

Grain Boundary ◽

Twin Boundary ◽

In Situ Observation ◽

Boundary Formation

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Simulated Imaging of Atomic Surface-Structures via Holographic Approaches by Planar Electron Backscattered Diffraction Patterns

10.1364/ais.2021.jtu5a.22 ◽

2021 ◽

Author(s):

Matthias Gianfelice ◽

Carsten Westphal

Keyword(s):

Surface Structures ◽

Electron Backscattered Diffraction ◽

Atomic Surface ◽

Diffraction Patterns ◽

Planar Electron

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Direct Characterization of Grain-Boundary Electrical Activity in Doped (Ba0.6Sr0.4)TiO3by Combined Imaging of Electron-Beam-Induced Current and Electron-Backscattered Diffraction

Journal of the American Ceramic Society ◽

10.1111/j.1551-2916.2004.01153.x ◽

2004 ◽

Vol 87 (6) ◽

pp. 1153-1156 ◽

Cited By ~ 4

Author(s):

Katsuro Hayashi ◽

Takahisa Yamamoto ◽

Yuichi Ikuhara ◽

Taketo Sakuma

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Electrical Activity ◽

Induced Current ◽

Electron Backscattered Diffraction ◽

Electron Beam Induced Current ◽

Combined Imaging

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Comparison of Experimental and Computational Aspects of Grain Growth in Al-Foil

MRS Proceedings ◽

10.1557/proc-652-y1.8 ◽

2000 ◽

Vol 652 ◽

Author(s):

Melik C. Demirel ◽

Andrew P. Kuprat ◽

Denise C. George ◽

Bassem S. El-Dasher ◽

Neil N. Carlson ◽

...

Keyword(s):

Grain Boundary ◽

Grain Growth ◽

Three Dimensional ◽

Interface Energy ◽

Grain Structure ◽

Electron Backscattered Diffraction ◽

Boundary Properties ◽

Ebsd Technique ◽

Columnar Grain ◽

Grain Boundary Motion

ABSTRACTGrain boundary and crystallographic orientation information of an Al-foil with a columnar grain structure is characterized by Electron Backscattered Diffraction (EBSD) technique. The starting microstructure and grain boundary properties are implemented as an input for the three- dimensional grain growth simulation. In the computational model, minimization of the interface energy is the driving force for the grain boundary motion. The computed evolved microstructure is compared with the final experimental microstructure, after annealing at 550 °C. Good agreement is observed between the experimentally obtained microstructure and the simulated microstructure. The constitutive description of the grain boundary properties was based on a 1- parameter characterization of the variation in mobility with misorientation angle.

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Grain Boundary-Dependent Selection Criteria for Nucleation of Gamma-Massive Grains in TiAl-Based Alloys

Materials Science Forum ◽

10.4028/www.scientific.net/msf.654-656.2338 ◽

2010 ◽

Vol 654-656 ◽

pp. 2338-2341 ◽

Cited By ~ 1

Author(s):

A. Sankaran ◽

Emmanuel Bouzy ◽

Matthew R. Barnett ◽

Alain Hazotte

Keyword(s):

Grain Boundary ◽

Grain Boundaries ◽

Selection Criteria ◽

Three Dimensional ◽

Massive Transformation ◽

Three Dimensions ◽

Variant Selection ◽

Electron Backscattered Diffraction ◽

Resolution Electron ◽

Nucleation Mechanisms

Rapid cooling of TiAl-based alloy from α phase (disordered hexagonal, A3) generates  phase (ordered tetragonal, L1o) grains through massive transformation nucleating mostly over the α/α grain boundaries. This current work deals with the identification and the validation of different nucleation mechanisms during  massive transformation in TiAl-based alloys. Special attention has been given to the variant selection criteria for the nucleation of the massive structures along different types of α/α grain boundaries. The  massive domains formed along the grain boundaries were analysed using high resolution electron backscattered diffraction (EBSD). Statistical studies were made on different nucleation sites and different mechanisms are proposed. Two–dimensional studies of the nucleation mechanism suggest that the minimization of the interfacial energy could be the predominant criteria during the grain boundary nucleation. In order to verify this nucleation criterion in three-dimensions, serial sections were made and EBSD maps were taken and analysed in each section. The variant selection observed during the nucleation and the growth of the  massive grains is further discussed after getting a broader view under three-dimensional investigations.

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Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

MRS Proceedings ◽

10.1557/proc-810-c4.7 ◽

2004 ◽

Vol 810 ◽

Cited By ~ 1

Author(s):

H.B. Yao ◽

D.Z. Chi ◽

S. Tripathy ◽

S.Y. Chow ◽

W.D. Wang ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

High Resolution ◽

Grain Boundary ◽

Surface Morphology ◽

Morphological Stability ◽

Triple Junctions ◽

Cross Sectional ◽

Transmission Electron ◽

Segregation Process

ABSTRACTThe germanosilicidation of Ni on strained (001) Si0.8Ge0.2, particularly Ge segregation, grain boundary grooving, and surface morphology, during rapid thermal annealing (RTA) was studied. High-resolution cross-sectional transmission electron microscopy (HRXTEM) suggested that Ge-rich Si1−zGez segregation takes place preferentially at the germanosilicide/Si1−xGex interface, more specifically at the triple junctions between two adjacent NiSi1−uGeu grains and the underlying epi Si1−xGex, and it is accompanied with thermal grooving process. The segregation process accelerates the thermal grooving of NiSi1−uGeu grain boundaries at the interface. The segregation-accelerated grain boundary grooving has significant effect on the surface morphology of NiSi1−uGeu films in Ni-SiGe system.

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Thermodynamics and Kinetics of 1D Structural Elements and Stability of Nanocrystalline Materials

Diffusion Foundations ◽

10.4028/www.scientific.net/df.5.173 ◽

2015 ◽

Vol 5 ◽

pp. 173-195

Author(s):

Günter Gottstein ◽

Lazar S. Shvindlerman

Keyword(s):

Grain Boundary ◽

Grain Growth ◽

Triple Junction ◽

Nanocrystalline Materials ◽

Triple Line ◽

Second Phase ◽

Structural Elements ◽

Triple Junctions ◽

Line Energy ◽

The Impact

Grain boundary triple junctions are the structural elements of a polycrystal. Recently it was recognized that they can strongly impact the microstructural evolution, and therefore there engender new opportunities to control and to design the grain microstructure of fine-grained and nanocrystalline materials due to their effect on recovery, recrystallization and grain growth. The measurement of triple junction energy and mobility is thus of great importance. The line energy of a triple junction constructs an additional driving force of grain growth. Taking the triple line energy into account, a modified form of the Zener force and the Gibbs-Thomson relation can be derived to reveal the influence of the triple line energy on second phase particles and the change of the equilibrium concentration of vacancies in the vicinity of voids at a grain boundary. The impact of triple junctions on the sintering of nanopowders is discussed. The role of “grain boundary - free surface” triple lines in the adhesive contact formation between spherical nanoparticles is considered. It is shown that there is a critical value of the triple line energy above which the nanoparticles do not stick together. Based on this result, a new nanoparticle agglomeration mechanism is proposed, which accounts for the formation of large agglomerates of crystallographically aligned nanoparticles during the nanopowder processing.

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