Characterization of the conductivity distribution and leakage current in proton-conducting ceramic electrolyte through modeling and sensitivity analysis

Author(s):  
Qingping Zhang ◽  
Yuxiang Guo ◽  
Jinwen Ding
1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.


2021 ◽  
Vol 550 ◽  
pp. 152941
Author(s):  
Seok Bin Seo ◽  
Edward Matthew Duchnowski ◽  
Miles O'Neal ◽  
Arthur T. Motta ◽  
Florian Passelaigue ◽  
...  

2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.


2009 ◽  
Vol 113 (44) ◽  
pp. 19218-19227 ◽  
Author(s):  
Roland Marschall ◽  
Pia Tölle ◽  
Welchy L. Cavalcanti ◽  
Michaela Wilhelm ◽  
Christof Köhler ◽  
...  

2019 ◽  
Vol 44 (2) ◽  
pp. 1130-1138 ◽  
Author(s):  
A.V. Kuzmin ◽  
A. Yu Stroeva ◽  
V.P. Gorelov ◽  
Yu.V. Novikova ◽  
A.S. Lesnichyova ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document