Characterization of Advanced Sequential Flow Deposition (ASFD) TiON electrode in MIM structure for leakage current reduction

2016 ◽  
Author(s):  
Tadahiro Ishizaka ◽  
Masaki Koizumi ◽  
Masaki Sano ◽  
Seokhyoung Hong ◽  
Masato Koizumi ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Reduction

Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

2018 ◽  
Vol 28 (8) ◽  
pp. 440-444
Author(s):  
Kwang-Jin Lee ◽  
◽  
Doyeon Kim ◽  
Duck-Kyun Choi ◽  
Woo-Byoung Kim
Keyword(s):  
Leakage Current ◽  
Chemical Cleaning ◽  
Cleaning Method ◽  
Current Reduction

Organic synaptic devices based on ionic gel with reduced leakage current

2021 ◽  
Vol 57 (15) ◽  
pp. 1907-1910
Author(s):  
Dapeng Liu ◽  
Yiwei Zhao ◽  
Qianqian Shi ◽  
Shilei Dai ◽  
Li Tian ◽  
...  
Keyword(s):  
Solid State ◽  
Leakage Current ◽  
Dielectric Film ◽  
Neuromorphic Computing ◽  
Computing Systems ◽  
Current Reduction

A solid-state hybrid electrolyte dielectric film was designed for leakage current reduction, synaptic simulation and neuromorphic computing systems.

A Single-Phase Five-Level Transformer-Less PV Inverter for Leakage Current Reduction

2021 ◽  
pp. 1-1
Author(s):  
Xiaonan Zhu ◽  
Hongliang Wang ◽  
Wenyuan Zhang ◽  
Hanzhe Wang ◽  
Xiaojun Deng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Single Phase ◽  
Pv Inverter ◽  
Current Reduction

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Fabrication and Characterization of Ferroelectric Polymer/TiO2/Al-doped ZnO Structures

2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa
Keyword(s):  
Leakage Current ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Tio2 Films ◽  
Gate Leakage Current ◽  
Poly Vinylidene Fluoride ◽  
Doped Zno ◽  
Fabrication And Characterization

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.

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