Influence of erbium (Er) Dopant on the enhanced optical properties of electrochemically deposited zinc oxide (ZnO) films for high-performance photovoltaic systems

Optik ◽  
2021 ◽  
pp. 168486
Author(s):  
Imosobomeh L. Ikhioya ◽  
Nwamaka I. Akpu ◽  
Faith U. Ochai-Ejeh
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
High Performance ◽  
Zno Films ◽  
Photovoltaic Systems ◽  
Electrochemically Deposited

Characterization and Optical Properties of Zinc Oxide Films Prepared by Microwave Technique

2015 ◽  
Vol 804 ◽  
pp. 7-11
Author(s):  
Suparut Narksitipan ◽  
Thaweedet Awirut
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Surface Film ◽  
Optical Transmittance ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Chemical Compositions ◽  
X Ray ◽  
Microwave Technique ◽  
Vis Spectroscopy

In this research, zinc oxide (ZnO) films were prepared using a wet chemical reaction via a microwave technique. X-ray diffraction techniques (XRD) and energy dispersive x-ray spectroscopy (EDS) were used to study the phases, crystalline structures, chemical compositions and optical properties of the films, respectively. Optical transmittance was also measured through UV-VIS spectroscopy. Surface film morphologies were investigated by scanning electron microscopy (SEM). As a result, a ZnO phase with a hexagonal structure was detected. The EDS spectrum shows that elements of Zn and O were present. The average optical transmittance value for all films was 75% at a wavelength of 370-375 nm, a comparison among the films obtained at different times show a transmittance value slightly higher for films obtained at higher times. A calculation of the energy band gap of ZnO films was estimated to be in the range of 3.31 to 3.35 eV. Additional, the ZnO films showed a smooth surface.

Structural and optical properties of electrochemically deposited ZnO films in electrolyte containing Al2 (SO4 )3

2013 ◽  
Vol 210 (4) ◽  
pp. 743-747 ◽  
Author(s):  
Konstantin Lovchinov ◽  
Maxim Ganchev ◽  
Miroslav Petrov ◽  
Hristo Nichev ◽  
Avgustina Rachkova ◽  
...  
Keyword(s):  
Optical Properties ◽  
Zno Films ◽  
Structural And Optical Properties ◽  
Electrochemically Deposited

scholarly journals Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

2015 ◽  
Vol 17 (46) ◽  
pp. 31247-31252 ◽  
Author(s):  
Talal M. Althagafi ◽  
Saud A. Algarni ◽  
Abdullah Al Naim ◽  
Javed Mazher ◽  
Martin Grell
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Aqueous Electrolyte ◽  
Zno Films ◽  
Precursor Route

We significantly improved the performance of precursor-route semiconducting zinc oxide (ZnO) films in electrolyte-gated thin film transistors (TFTs).

Potentiostatic Deposition of Zinc Oxide on Flexible Substrate

2010 ◽  
Vol 75 ◽  
pp. 43-48
Author(s):  
Ching Hong Wong ◽  
Chee Leung Mak ◽  
Kin Hung Wong
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Flexible Substrate ◽  
Bath Temperature ◽  
Zinc Nitrate ◽  
Zno Films ◽  
Deposition Technique ◽  
Structural And Optical Properties ◽  
Cathodic Deposition ◽  
Deposition Parameters

Transparent zinc oxide (ZnO) films on flexible copper-coated polyethylene terephthalate (PET) sheet have been grown by a potentiostatic cathodic deposition technique using aqueous zinc nitrate as electrolyte. ZnO films were fabricated using different deposition parameters such as applied potential, electrolyte concentration and bath temperature. Their structural and optical properties were characterized by X-ray diffractometer, scanning electron microscope, diffuse reflectance UV-VIS spectrophotometer and photoluminescence spectrometer. The effects of these deposition parameters on the structural and optical properties of the fabricated ZnO films have been investigated. On the basis of our results, we demonstrate that high quality ZnO films have been successfully grown on flexible polymeric substrates using a low temperature potentiostatic cathodic deposition technique.

scholarly journals Structural, electrical and optical properties of copper-doped zinc oxide films deposited by spray pyrolysis

Cerâmica ◽  
2020 ◽  
Vol 66 (379) ◽  
pp. 284-290
Author(s):  
J. S. C. Licurgo ◽  
G. R. de Almeida Neto ◽  
H. R. Paes Junior
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Oxide Films ◽  
Blue Emission ◽  
Optical Transmittance ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Cu Doping ◽  
Zinc Oxide Films

Abstract The effect of copper doping on structural, electrical, and optical properties of zinc oxide films was evaluated. Copper-doped films (ZnO:Cu) were successfully deposited on a glass substrate by spray pyrolysis at doping levels of 0, 2.5, and 7.5 at% (ZnO, ZC2.5, ZC7.5). All films were polycrystalline, single-phase with ZnO hexagonal wurtzite structure. The films presented nanostructured crystallites, from 36.7 to 38.2 nm. Cu doping increased the electrical conductivity of the ZnO films; this change was proportional to the Cu concentration. The films presented high optical transmittance of 70-80% in the visible wavelength. The energy gap decreased upon Cu doping. The photoluminescence spectrum of all films displayed an intense ultraviolet emission and a weaker blue emission. The emissions shifted to lower wavelengths with increasing dopant concentrations. ZC7.5 presented the most promising properties for an application as transparent conducting oxide: intense optical transmittance and UV photoluminescence, also the lowest electrical resistivity.

Analysis of Sputtered Zinc Oxide Films

1980 ◽  
Vol 38 ◽  
pp. 416-417
Author(s):  
T. A. Emma ◽  
M. P. Singh
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Piezoelectric Materials ◽  
Oxide Films ◽  
Optical Quality ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Sputtered Films ◽  
Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

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