scholarly journals Morphology, Acoustic Phonon Confinement and Optical Properties of Doped Nanostructured Wurtzite Zinc Oxide (w-ZnO) Films with Different Crystalline Orientations

2011 ◽  
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Acoustic Phonon ◽  
Zno Films ◽  
Phonon Confinement

Characterization and Optical Properties of Zinc Oxide Films Prepared by Microwave Technique

2015 ◽  
Vol 804 ◽  
pp. 7-11
Author(s):  
Suparut Narksitipan ◽  
Thaweedet Awirut
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Surface Film ◽  
Optical Transmittance ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Chemical Compositions ◽  
X Ray ◽  
Microwave Technique ◽  
Vis Spectroscopy

In this research, zinc oxide (ZnO) films were prepared using a wet chemical reaction via a microwave technique. X-ray diffraction techniques (XRD) and energy dispersive x-ray spectroscopy (EDS) were used to study the phases, crystalline structures, chemical compositions and optical properties of the films, respectively. Optical transmittance was also measured through UV-VIS spectroscopy. Surface film morphologies were investigated by scanning electron microscopy (SEM). As a result, a ZnO phase with a hexagonal structure was detected. The EDS spectrum shows that elements of Zn and O were present. The average optical transmittance value for all films was 75% at a wavelength of 370-375 nm, a comparison among the films obtained at different times show a transmittance value slightly higher for films obtained at higher times. A calculation of the energy band gap of ZnO films was estimated to be in the range of 3.31 to 3.35 eV. Additional, the ZnO films showed a smooth surface.

Potentiostatic Deposition of Zinc Oxide on Flexible Substrate

2010 ◽  
Vol 75 ◽  
pp. 43-48
Author(s):  
Ching Hong Wong ◽  
Chee Leung Mak ◽  
Kin Hung Wong
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Flexible Substrate ◽  
Bath Temperature ◽  
Zinc Nitrate ◽  
Zno Films ◽  
Deposition Technique ◽  
Structural And Optical Properties ◽  
Cathodic Deposition ◽  
Deposition Parameters

Transparent zinc oxide (ZnO) films on flexible copper-coated polyethylene terephthalate (PET) sheet have been grown by a potentiostatic cathodic deposition technique using aqueous zinc nitrate as electrolyte. ZnO films were fabricated using different deposition parameters such as applied potential, electrolyte concentration and bath temperature. Their structural and optical properties were characterized by X-ray diffractometer, scanning electron microscope, diffuse reflectance UV-VIS spectrophotometer and photoluminescence spectrometer. The effects of these deposition parameters on the structural and optical properties of the fabricated ZnO films have been investigated. On the basis of our results, we demonstrate that high quality ZnO films have been successfully grown on flexible polymeric substrates using a low temperature potentiostatic cathodic deposition technique.

scholarly journals Structural, electrical and optical properties of copper-doped zinc oxide films deposited by spray pyrolysis

Cerâmica ◽  
2020 ◽  
Vol 66 (379) ◽  
pp. 284-290
Author(s):  
J. S. C. Licurgo ◽  
G. R. de Almeida Neto ◽  
H. R. Paes Junior
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Oxide Films ◽  
Blue Emission ◽  
Optical Transmittance ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Cu Doping ◽  
Zinc Oxide Films

Abstract The effect of copper doping on structural, electrical, and optical properties of zinc oxide films was evaluated. Copper-doped films (ZnO:Cu) were successfully deposited on a glass substrate by spray pyrolysis at doping levels of 0, 2.5, and 7.5 at% (ZnO, ZC2.5, ZC7.5). All films were polycrystalline, single-phase with ZnO hexagonal wurtzite structure. The films presented nanostructured crystallites, from 36.7 to 38.2 nm. Cu doping increased the electrical conductivity of the ZnO films; this change was proportional to the Cu concentration. The films presented high optical transmittance of 70-80% in the visible wavelength. The energy gap decreased upon Cu doping. The photoluminescence spectrum of all films displayed an intense ultraviolet emission and a weaker blue emission. The emissions shifted to lower wavelengths with increasing dopant concentrations. ZC7.5 presented the most promising properties for an application as transparent conducting oxide: intense optical transmittance and UV photoluminescence, also the lowest electrical resistivity.

Analysis of Sputtered Zinc Oxide Films

1980 ◽  
Vol 38 ◽  
pp. 416-417
Author(s):  
T. A. Emma ◽  
M. P. Singh
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Piezoelectric Materials ◽  
Oxide Films ◽  
Optical Quality ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Sputtered Films ◽  
Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

Characteristics of Zinc Oxide Film Prepared by Chemical Bath Deposition Method

2014 ◽  
Vol 602-603 ◽  
pp. 871-875
Author(s):  
Yen Pei Fu ◽  
Jian Jhih Chen
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
Oxide Films ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Zinc Oxide Film ◽  
Incident Wavelength ◽  
Zinc Oxide Films

In this study, ZnO films, prepared by Chemical Bath Deposition (CBD), are applied as the conductive layers for thin film solar cells. Zinc acetate is used as a source of zinc, and different proportions of ammonia solution are added and well mixed. The growth of zinc oxide films in reaction solutions is taken place at 80°C and then heated to 500°C for one hour. In this study, the different ammonia concentrations and deposition times is controlled. The thin film structure is Hexagonal structure, which is determined by X-ray diffraction spectrometer (XRD) analysis. Scanning electron microscopy (SEM) is used as the observation of surface morphology, the bottom of the film is the interface where the heterogeneous nucleation happens. With the increase of deposition time, there were a few attached zinc oxide particles, which is formed by homogeneous nucleation. According to UV / visible light (UV / Vis) absorption spectrometer transmittance measurements and the relationship between/among the incident wavelength, it can be converted to the energy gaps (Eg), which are about 3.0 to 3.2eV, by using fluorescence spectroscopy analysis. The emission of zinc oxide films has two wavelengths which are located on 510nm and 570nm. According to Based on the all analytic results, the ammonia concentration at 0.05M, and the deposition time is 120 minutes, would obtain the conditions of ZnO films which is more suitable for applications of conductive layer material in thin film solar cell.

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

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