Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy

2013 ◽  
Vol 580 ◽  
pp. 82-87 ◽  
Author(s):  
Z.Y. Lu ◽  
P.P. Chen ◽  
Z.M. Liao ◽  
S.X. Shi ◽  
Y. Sun ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Epitaxial Gaas ◽  
Gaas Nanowires

Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Scanning Electron Microscope ◽  
Structural Properties ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Gaas Nanowires ◽  
Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

scholarly journals Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

2018 ◽  
Vol 30 (6) ◽  
pp. 065602 ◽  
Author(s):  
Suzanne Lancaster ◽  
Heiko Groiss ◽  
Tobias Zederbauer ◽  
Aaron M Andrews ◽  
Donald MacFarland ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires ◽  
Axial Growth

scholarly journals Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Parameters ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Group V ◽  
Group Iii ◽  
Ingan Alloys

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

scholarly journals Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

2010 ◽  
Vol 82 (3) ◽  
Author(s):  
G. E. Cirlin ◽  
V. G. Dubrovskii ◽  
Yu. B. Samsonenko ◽  
A. D. Bouravleuv ◽  
K. Durose ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires

scholarly journals Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

2010 ◽  
Vol 5 (10) ◽  
pp. 1692-1697 ◽  
Author(s):  
X. Zhang ◽  
V. G. Dubrovskii ◽  
N. V. Sibirev ◽  
G. E. Cirlin ◽  
C. Sartel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires ◽  
Theory And Experiment

scholarly journals GaAs nanowires by Mn-catalysed molecular beam epitaxy

2007 ◽  
Vol 61 ◽  
pp. 992-996 ◽  
Author(s):  
S Rubini ◽  
M Piccin ◽  
G Bais ◽  
F Jabeen ◽  
F Martelli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires

The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy

2009 ◽  
Vol 311 (6) ◽  
pp. 1487-1492 ◽  
Author(s):  
Yuen-Yee Wong ◽  
Edward Yi Chang ◽  
Tsung-Hsi Yang ◽  
Jet-Rung Chang ◽  
Yi-Cheng Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Defect Structure ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Aln Buffer
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