Tuning tunnel barrier in Si3N4-based resistive memory embedding SiO2 for low-power and high-density cross-point array applications

2016 ◽  
Vol 663 ◽  
pp. 256-261 ◽  
Author(s):  
Sungjun Kim ◽  
Byung-Gook Park
Keyword(s):  
Low Power ◽  
High Density ◽  
Tunnel Barrier ◽  
Resistive Memory ◽  
Cross Point

Design trade-offs for high density cross-point resistive memory

2012 ◽  
Author(s):  
Dimin Niu ◽  
Cong Xu ◽  
Naveen Muralimanohar ◽  
Norman P. Jouppi ◽  
Yuan Xie
Keyword(s):  
High Density ◽  
Resistive Memory ◽  
Cross Point ◽  
Trade Offs

scholarly journals Cross‐Point Arrays with Low‐Power ITO‐HfO 2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires

2020 ◽  
Vol 6 (6) ◽  
pp. 2000154 ◽  
Author(s):  
Karl‐Magnus Persson ◽  
Mamidala Saketh Ram ◽  
Olli‐Pekka Kilpi ◽  
Mattias Borg ◽  
Lars‐Erik Wernersson
Keyword(s):  
Low Power ◽  
Memory Cells ◽  
Resistive Memory ◽  
Cross Point

MIM-type cell selector for high-density and low-power cross-point memory application

2012 ◽  
Vol 93 ◽  
pp. 81-84 ◽  
Author(s):  
Jungho Shin ◽  
Godeuni Choi ◽  
Jiyong Woo ◽  
Jubong Park ◽  
Sangsu Park ◽  
...  
Keyword(s):  
Low Power ◽  
High Density ◽  
Cross Point

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

2015 ◽  
Vol 106 (21) ◽  
pp. 212106 ◽  
Author(s):  
Sungjun Kim ◽  
Sunghun Jung ◽  
Min-Hwi Kim ◽  
Seongjae Cho ◽  
Byung-Gook Park
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
High Density ◽  
Tunnel Barrier ◽  
Access Memory ◽  
Switching Characteristics

Design and process integration for high-density, high-speed, and low-power 6F/sup 2/ cross point MRAM cell

2005 ◽  
Author(s):  
Y. Asao ◽  
T. Kajiyama ◽  
Y. Fukuzumi ◽  
M. Amano ◽  
H. Aikawa ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Process Integration ◽  
High Density ◽  
Cross Point

NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

2014 ◽  
Author(s):  
Wan Gee Kim ◽  
Hyun Min Lee ◽  
Beom Yong Kim ◽  
Kyoo Ho Jung ◽  
Tae Geun Seong ◽  
...  
Keyword(s):  
Low Power ◽  
Cost Effective ◽  
High Density ◽  
Cross Point

A Comprehensive Model for Write Disturbance in Resistive Memory Composed of Cross-Point Array

2017 ◽  
Vol E100.C (3) ◽  
pp. 329-339
Author(s):  
Yoshiaki ASAO ◽  
Fumio HORIGUCHI
Keyword(s):  
Comprehensive Model ◽  
Resistive Memory ◽  
Cross Point

scholarly journals Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

2021 ◽  
Vol 15 (6) ◽  
Author(s):  
Y.C. Wu ◽  
K. Garello ◽  
W. Kim ◽  
M. Gupta ◽  
M. Perumkunnil ◽  
...  
Keyword(s):  
Low Power ◽  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Spin Orbit ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Embedded Applications ◽  
Voltage Gate

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

2020 ◽  
Author(s):  
A. Belmonte ◽  
H. Oh ◽  
N. Rassoul ◽  
G.L. Donadio ◽  
J. Mitard ◽  
...  
Keyword(s):  
Low Power ◽  
High Density ◽  
The Way
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