NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

2014 ◽  
Author(s):  
Wan Gee Kim ◽  
Hyun Min Lee ◽  
Beom Yong Kim ◽  
Kyoo Ho Jung ◽  
Tae Geun Seong ◽  
...  
Keyword(s):  
Low Power ◽  
Cost Effective ◽  
High Density ◽  
Cross Point

scholarly journals A Novel 8T Cell-Based Subthreshold Static RAM for Ultra-Low Power Platform Applications

Electronics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 928 ◽  
Author(s):  
Taehoon Kim ◽  
Sivasundar Manisankar ◽  
Yeonbae Chung
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Cost Effective ◽  
Operating Mode ◽  
Sleep Mode ◽  
Cmos Process ◽  
Operating Voltage ◽  
Cross Point ◽  
Ultra Low Power ◽  
Static Ram

Subthreshold SRAMs profit various energy-constrained applications. The traditional 6T SRAMs exhibit poor cell stability with voltage scaling. To this end, several 8T to 16T cell designs have been reported to improve the stability. However, they either suffer one of disturbances or consume large bit-area overhead. Furthermore, some cell options have a limited write-ability. This paper presents a novel 8T static RAM for reliable subthreshold operation. The cell employs a fully differential scheme and features cross-point access. An adaptive cell bias for each operating mode eliminates the read disturbance and enlarges the write-ability as well as the half-select stability in a cost-effective small bit-area. The bit-cell also can support efficient bit-interleaving. To verify the SRAM technique, a 32-kbit macro incorporating the proposed cell was implemented with an industrial 180 nm low-power CMOS process. At 0.4 V and room temperature, the proposed cell achieves 3.6× better write-ability and 2.6× higher dummy-read stability compared with the commercialized 8T cell. The 32-kbit SRAM successfully operates down to 0.21 V (~0.27 V lower than transistor threshold voltage). At its lowest operating voltage, the sleep-mode leakage power of entire SRAM is 7.75 nW. Many design results indicate that the proposed SRAM design, which is applicable to an aggressively-scaled process, might be quite useful in realizing cost-effective robust ultra-low voltage SRAMs.

MIM-type cell selector for high-density and low-power cross-point memory application

2012 ◽  
Vol 93 ◽  
pp. 81-84 ◽  
Author(s):  
Jungho Shin ◽  
Godeuni Choi ◽  
Jiyong Woo ◽  
Jubong Park ◽  
Sangsu Park ◽  
...  
Keyword(s):  
Low Power ◽  
High Density ◽  
Cross Point

Design and process integration for high-density, high-speed, and low-power 6F/sup 2/ cross point MRAM cell

2005 ◽  
Author(s):  
Y. Asao ◽  
T. Kajiyama ◽  
Y. Fukuzumi ◽  
M. Amano ◽  
H. Aikawa ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Process Integration ◽  
High Density ◽  
Cross Point

scholarly journals Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

2021 ◽  
Vol 15 (6) ◽  
Author(s):  
Y.C. Wu ◽  
K. Garello ◽  
W. Kim ◽  
M. Gupta ◽  
M. Perumkunnil ◽  
...  
Keyword(s):  
Low Power ◽  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Spin Orbit ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Embedded Applications ◽  
Voltage Gate

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

2020 ◽  
Author(s):  
A. Belmonte ◽  
H. Oh ◽  
N. Rassoul ◽  
G.L. Donadio ◽  
J. Mitard ◽  
...  
Keyword(s):  
Low Power ◽  
High Density ◽  
The Way

HfO2-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications

2020 ◽  
Author(s):  
Masumi Saitoh ◽  
Reika Ichihara ◽  
Marina Yamaguchi ◽  
Kunifumi Suzuki ◽  
Keisuke Takano ◽  
...  
Keyword(s):  
Low Power ◽  
High Density ◽  
Ferroelectric Memory

An Innovative Low Cost Well Monitoring Solution: W.A.N.D

2021 ◽  
Author(s):  
Jean Grégoire Boero Rollo ◽  
John Richard Ordonez Varela ◽  
Tayssir Ben Ghzaiel ◽  
Cedric Mouanga ◽  
Arnaud Luxey ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Low Power ◽  
Low Cost ◽  
Field Measurements ◽  
Cost Effective ◽  
Complex Environment ◽  
Sensor Device ◽  
Magnetic Field Measurements ◽  
Pipeline Monitoring ◽  
Harsh Conditions

Abstract Wireless Autonomous Nano-sensor Device (WAND) system is a disruptive cost-effective micro-system for well monitoring. It allows to realize pressure, temperature, inertial, and magnetic field measurements in harsh conditions; it also offers Bluetooth low-power communication and Wireless charging capabilities. Analysis’ results of an industrial offshore pilot realized in Congo (a world first in O&G industry in such complex environment), and major improvements implemented after this pilot are reported in this paper. Accomplished advancements comprise hardware and software developments extending operation lifetime, and simplifying on-site utilization. To date, there is not a commercial solution of this type in the market, the realization of this project is a real innovation allowing practical and low-cost monitoring during well intervention while minimizing the risks associated with standard Rigless intervention. Other applications regarding dry-tree wells on tension-leg platforms (TLP), drilling and completion operations, and pipeline monitoring are being investigated, too.

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