Effect of double substitutions of Cd and Cu on optical band gap and electrical properties of non-colloidal PbS thin films

2016 ◽  
Vol 685 ◽  
pp. 129-134 ◽  
Author(s):  
Seung Min Lee ◽  
Deuk Ho Yeon ◽  
Sanggu Simon Chon ◽  
Yong Soo Cho
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Optical Band Gap

Effect of MWCNT addition on the optical band gap of PVA/CS transient biocomposites

2021 ◽  
pp. 002199832110370
Author(s):  
Ömer Bahadır Mergen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rapid Development ◽  
Measurement Techniques ◽  
Resistivity Measurement ◽  
Optical Parameters ◽  
Optical And Electrical Properties ◽  
Biocomposite Films

In recent years, as a result of increasing environmental concerns, biodegradable materials have gained great attention. With the rapid development of electronic technology, the importance of innovation and development of low-cost, sustainable, transient bioelectronics materials is increasing. In this research, the preparation of Poly(Vinyl Alcohol) (PVA), Chitosan (CS), and Multi-Walled Carbon nanotube (MWCNT) biocomposite films have been described. The solution mixing, ultrasonic mixing, and spin coating techniques were used to prepare the PVA/CS/MWCNT biocomposite thin films. UV–Vis absorption spectroscopy and two-point probe resistivity measurement techniques were used to study the optical and electrical properties of the biocomposite thin films. Optical band gap energies ( Eg) of PVA/CS/MWCNT biocomposites were obtained using the Tauc and Absorbance Spectrum Fitting (ASF) methods. Results obtained with both methods were found to be exactly the same. Experimental results have shown that with increasing MWCNT concentration, electrical conductivity (σ) increases from 1.75x10−16 S to 2.94x10−3 S, and Eg decreases significantly. At the same time, the fundamental optical parameters such as band tail (Urbach) energy ( Eu), refractive index ( n), absorption ( α), and extinction ( k) coefficient of the PVA/CS/MWCNT biocomposites were investigated in the UV-VIS range. The improvement observed in the optical and electrical properties of PVA/CS/MWCNT biocomposite films shows that these composites could be used as bioelectronics materials.

OPTICAL AND ELECTRICAL PROPERTIES OF THALLIUM SULPHIDE AND TlxMySz (M=Cu,Bi,Sb) thin films

2001 ◽  
Vol 15 (17n19) ◽  
pp. 737-740 ◽  
Author(s):  
VERÓNICA ESTRELLA ◽  
ROGELIO MEJÍA ◽  
M.T.S. NAIR ◽  
P.K. NAIR
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Optical And Electrical Properties ◽  
Thallium Nitrate

Tl2S thin films (0.05μm-1μm) were deposited from chemical bath containing thallium nitrate and thiourea. These films possess an indirect optical band gap of about 1 eV. Multi-layer films: Tl2S-CuS , Tl2S-Bi2S3 and Tl2S-Sb2S3 films were prepared, which when annealed at 300°C led to the formation of CuTlS2 (tetragonal, E g.dir = 1.25 eV), Bi2Tl4S5 (orthorhombic, E g.dir = 2.05 eV), TlSbS2 (triclinic, E g.dir = 1.92 eV), as confirmed by XRD. Optical band gap of 1.4 eV - 2 eV suggests possible application as absorber materials in solar cell.

scholarly journals N-образные вольт-амперные характеристики гибридных органических материалов на основе цинковых комплексов

2021 ◽  
Vol 47 (8) ◽  
pp. 3
Author(s):  
А.Н. Гусев ◽  
А.С. Мазинов ◽  
В.С. Гурченко ◽  
А.С. Тютюник ◽  
Е.В. Брага
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Infrared Spectroscopy ◽  
Electrical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Organic Materials ◽  
Zinc Complexes ◽  
Current Voltage ◽  
Current Voltage Characteristics

The current-voltage characteristics of hybrid organic materials C48H42N6O2Zn and C54H54N6O2Zn are researched. The method of obtaining, microscopy, as well as the results of infrared spectroscopy and studies of the electrical properties of the obtained thin films of these organic materials based on zinc complexes. The results of calculating the optical band gap are presented. It was found that the resulting thin-film structures have N-shaped current-voltage characteristics.

scholarly journals Electron Irradiation Effects on the Optical and Electrical Properties of ZnO/Ag/SnO2 Thin Films

2020 ◽  
Vol 58 (3) ◽  
pp. 190-194 ◽  
Author(s):  
Yu-Sung Kim ◽  
Jin-Young Choi ◽  
Yun-je park ◽  
Su-Hyeon Choe ◽  
Byung-Chul Cha ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Electron Irradiation ◽  
Carrier Density ◽  
Optical Band Gap ◽  
The Other ◽  
Electrical Performance ◽  
Incident Electron Energy ◽  
Optical And Electrical Properties

Transparent conductive ZnO 50 nm/Ag 10 nm/SnO<sub>2</sub> 50 nm (ZAS) tri-layer films were deposited on glass substrates by magnetron sputtering, and then the surface was subjected to intense electron beam irradiation to investigate the effects of electron irradiation on the structural, optical, and electrical properties of the films. After deposition, the ZAS thin films were electron-irradiated for 10 minutes, with varying electron incident energies of 300, 600, and 900 eV. The films that were electron irradiated at 900 eV showed higher optical transmittance of 83.6% in the visible wavelength region, and lower resistivity, of 4.75 × 10<sup>-5</sup> Ωcm, than the other films. From the observed electrical properties and optical band gap, it was concluded that the optical band gap increased with the incident electron energy up to 600 eV. The optical band gap increased from 4.12 to 4.23 eV, with carrier density increasing from 7.09 to 8.55 × 10<sup>21</sup> cm<sup>−3</sup>. However, the film electron irradiated at 900 eV showed a decrease in optical band gap energy of 4.16 eV due to the decreased carrier density of 8.25 × 10<sup>21</sup> cm<sup>−3</sup>. The figure of merit revealed that the ZAS thin films electron-irradiated at 900 eV had higher optical and electrical performance than the other films prepared in this study.

Urbach tail analysis on the defect states of polypyrrole thin films prepared by AC plasma polymerization Urbach tail analysis on the defect states of polypyrrole thin films prepared by AC plasma polymerization

e-Polymers ◽  
2010 ◽  
Vol 10 (1) ◽  
Author(s):  
Joseph John ◽  
Sajeev Sivaraman ◽  
S. Jaylekshmi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical Absorption ◽  
Band Gap ◽  
Plasma Polymerization ◽  
Optical Band Gap ◽  
Film Structure ◽  
Defect States ◽  
Urbach Tail ◽  
Tail Analysis

AbstractPolypyrrole is a widely studied conducting polymer with excellent optical and electrical properties. Polypyrrole thin films in the pristine and iodine doped forms have been prepared by ac plasma polymerization. The in situ doping of iodine during the process of plasma polymerization modified the optical absorption behaviour of the thin films due to the incorporation of charged defects in the film structure. Optical band gap and related constants are estimated from optical absorption studies. The Urbach tail analysis of the pristine and doped thin films shows that more defect levels are created, when the polymerization was carried out in the iodine atmosphere. The electrical properties of these thin films were estimated from the conductivity measurements. It is found that in the case of iodine doped films, the optical band gap decreased and electrical conductivity enhanced when compared to the pristine ones. The results are correlated with the structural differences of the pristine and doped thin films with the help of Fourier Transform Infrared Spectroscopy (FTIR) analysis.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

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