scholarly journals Tuning of structural, optical band gap, and electrical properties of room-temperature-grown epitaxial thin films through the Fe2O3:NiO ratio

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Okkyun Seo ◽  
Akhil Tayal ◽  
Jaemyung Kim ◽  
Chulho Song ◽  
Yanna Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Epitaxial Thin Films

Effect of MWCNT addition on the optical band gap of PVA/CS transient biocomposites

2021 ◽  
pp. 002199832110370
Author(s):  
Ömer Bahadır Mergen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rapid Development ◽  
Measurement Techniques ◽  
Resistivity Measurement ◽  
Optical Parameters ◽  
Optical And Electrical Properties ◽  
Biocomposite Films

In recent years, as a result of increasing environmental concerns, biodegradable materials have gained great attention. With the rapid development of electronic technology, the importance of innovation and development of low-cost, sustainable, transient bioelectronics materials is increasing. In this research, the preparation of Poly(Vinyl Alcohol) (PVA), Chitosan (CS), and Multi-Walled Carbon nanotube (MWCNT) biocomposite films have been described. The solution mixing, ultrasonic mixing, and spin coating techniques were used to prepare the PVA/CS/MWCNT biocomposite thin films. UV–Vis absorption spectroscopy and two-point probe resistivity measurement techniques were used to study the optical and electrical properties of the biocomposite thin films. Optical band gap energies ( Eg) of PVA/CS/MWCNT biocomposites were obtained using the Tauc and Absorbance Spectrum Fitting (ASF) methods. Results obtained with both methods were found to be exactly the same. Experimental results have shown that with increasing MWCNT concentration, electrical conductivity (σ) increases from 1.75x10−16 S to 2.94x10−3 S, and Eg decreases significantly. At the same time, the fundamental optical parameters such as band tail (Urbach) energy ( Eu), refractive index ( n), absorption ( α), and extinction ( k) coefficient of the PVA/CS/MWCNT biocomposites were investigated in the UV-VIS range. The improvement observed in the optical and electrical properties of PVA/CS/MWCNT biocomposite films shows that these composites could be used as bioelectronics materials.

Co-doped SrSnO3 epitaxial thin films on MgO with tunable band gap and room-temperature ferromagnetism

2019 ◽  
Vol 109 ◽  
pp. 101-106 ◽  
Author(s):  
Dongsheng Gao ◽  
Xiangdong Gao ◽  
Yongqing Wu ◽  
Tongtong Zhang ◽  
Jingnan Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Epitaxial Thin Films ◽  
Tunable Band Gap ◽  
Co Doped

scholarly journals Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
M. Acosta ◽  
I. Riech ◽  
E. Martín-Tovar
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Rf Sputtering ◽  
Argon Pressure ◽  
Band Gaps ◽  
Zno Thin Films ◽  
Optical Band Gaps

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.

Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)

1995 ◽  
Vol 10 (3) ◽  
pp. 668-679 ◽  
Author(s):  
L.M. Porter ◽  
R.F. Davis ◽  
J.S. Bow ◽  
M.J. Kim ◽  
R.W. Carpenter ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Epitaxial Thin Films ◽  
Interfacial Chemistry ◽  
Barrier Heights ◽  
High Resolution Tem ◽  
Reaction Zones

Epitaxial thin films (4–1000 Å) of Ti contacts have been deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type, alpha (6H)-SiC(0001). The interfacial chemistry and microstructure, and the electrical properties, were investigated at room temperature and after annealing at 700 °C up to 60 min. High resolution TEM analyses revealed the formation during annealing of reaction zones consisting of Ti5Si3 and TiC. The corresponding electrical properties exhibited considerable stability except after an initial 20 min anneal. Current-voltage (I-V) measurements showed that the Ti contacts were rectifying with low ideality factors (n < 1.09) and typical leakage currents of 5 × 10−7 A/cm2 at −10 V. The Schottky barrier heights calculated from x-ray photoelectron spectroscopy and I-V and V-V measurements were between 0.79 and 0.88 eV for the as-deposited contacts and between 0.86 and 1.04 eV for the annealed contacts.

OPTICAL AND ELECTRICAL PROPERTIES OF THALLIUM SULPHIDE AND TlxMySz (M=Cu,Bi,Sb) thin films

2001 ◽  
Vol 15 (17n19) ◽  
pp. 737-740 ◽  
Author(s):  
VERÓNICA ESTRELLA ◽  
ROGELIO MEJÍA ◽  
M.T.S. NAIR ◽  
P.K. NAIR
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Optical And Electrical Properties ◽  
Thallium Nitrate

Tl2S thin films (0.05μm-1μm) were deposited from chemical bath containing thallium nitrate and thiourea. These films possess an indirect optical band gap of about 1 eV. Multi-layer films: Tl2S-CuS , Tl2S-Bi2S3 and Tl2S-Sb2S3 films were prepared, which when annealed at 300°C led to the formation of CuTlS2 (tetragonal, E g.dir = 1.25 eV), Bi2Tl4S5 (orthorhombic, E g.dir = 2.05 eV), TlSbS2 (triclinic, E g.dir = 1.92 eV), as confirmed by XRD. Optical band gap of 1.4 eV - 2 eV suggests possible application as absorber materials in solar cell.

Effects of Different Thermal Treatment on Optical Properties and Microstructure of ZnO Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1766-1770 ◽  
Author(s):  
Dong Ping Zhang ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Li Li Ru ◽  
Jian Jun Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Constant Temperature ◽  
Room Temperature ◽  
Optical Band Gap ◽  
The Other ◽  
Zno Thin Films ◽  
Zno Films ◽  
Dc Reactive Magnetron Sputtering

ZnO thin films were prepared by DC reactive magnetron sputtering at room temperature. Two of them were annealed with different modes under vacuum condition. One was annealed with constant temperature of 300°C ; the other was annealed with temperature rising step by step from room temperature to 300°C . By comparing the microstructure and optical properties of the as-grown and annealed samples, the effects of different annealing modes on ZnO films performances were revealed. The experiment results investigated that the sample annealed with constant temperature of 300°C has the high grain size and surface roughness. Both of the two annealing modes could release the intrinsic stresses to some degree. The optical band gap of the samples narrowed after annealing, and the two annealed samples have almost the same band gap. Strong green emissions are observed for all the samples, but the emission intensity decreased of the sample annealed with the temperature rising step by step compared with that of other samples.

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