Oxygen vacancies enhanced photoresponsive performance of ZnO nanoparticles thin film/Si heterojunctions for ultraviolet/infrared photodetector

2019 ◽  
Vol 797 ◽  
pp. 1224-1231 ◽  
Author(s):  
Cuicui Ling ◽  
Tianchao Guo ◽  
Meixia Shan ◽  
Lin Zhao ◽  
Hongguang Sui ◽  
...  
2020 ◽  
Vol 8 (4) ◽  
pp. 103887
Author(s):  
I.M. Hegazy ◽  
R.A. Geioushy ◽  
S.M. El-Sheikh ◽  
Ahmed Shawky ◽  
S. El-Sherbiny ◽  
...  

2017 ◽  
Vol 86 (7) ◽  
pp. 074704 ◽  
Author(s):  
Wataru Namiki ◽  
Takashi Tsuchiya ◽  
Makoto Takayanagi ◽  
Shoto Furuichi ◽  
Makoto Minohara ◽  
...  

ChemInform ◽  
2010 ◽  
Vol 24 (31) ◽  
pp. no-no
Author(s):  
C. PERRIN ◽  
O. PENA ◽  
M. MOKHTARI ◽  
C. THIVET ◽  
M. GUILLOUX-VIRY ◽  
...  
Keyword(s):  

2013 ◽  
Vol 58 ◽  
pp. 144-153 ◽  
Author(s):  
Abdou Karim Diallo ◽  
Meriem Gaceur ◽  
Nicolas Berton ◽  
Olivier Margeat ◽  
Jörg Ackermann ◽  
...  

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.


2013 ◽  
Vol 102 (4) ◽  
pp. 042902 ◽  
Author(s):  
K. Shimamoto ◽  
K. Hatabayashi ◽  
Y. Hirose ◽  
S. Nakao ◽  
T. Fukumura ◽  
...  

2021 ◽  
Author(s):  
Jihyun Lee ◽  
Youngmoon Choi ◽  
Byoung Joon Park ◽  
Jeong Woo Han ◽  
Hyun-Sook Lee ◽  
...  

Abstract ZnO has been studied intensely for chemical sensors due to its high sensitivity and fast response. Here, we present a simple approach to precisely control oxygen vacancy contents to provide significantly enhanced acetone sensing performance of commercial ZnO nanopowders. A combination of H2O2 treatment and thermal annealing produces optimal surface defects with oxygen vacancies on the ZnO nanoparticles (NPs). The highest response of ~27,562 was achieved for 10 ppm acetone in 0.125 M H2O2 treated/annealed ZnO NPs at the optimal working temperature of 400 ℃, which is significantly higher than that of reported so far in various acetone sensors based on metal-oxide-semiconductor (MOS). Furthermore, first-principles calculations indicate that pre-adsorbed O formed on the surface of H2O2-treated ZnO NPs can provide a favorable adsorption energy, especially for acetone detection, due to strong bidentate bonding between carbonyl C atom of acetone molecules and pre-adsorbed O on the ZnO surface. Our study demonstrates that controlling surface oxygen vacancies by H2O2 treatment and re-annealing at optimal temperature is an effective method to improve the sensing properties of commercial MOS materials.


1993 ◽  
Vol 195 ◽  
pp. 339-342 ◽  
Author(s):  
C. Perrin ◽  
O. Peña ◽  
M. Mokhtari ◽  
C. Thivet ◽  
M. Guilloux-Viry ◽  
...  
Keyword(s):  

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