Oxidation resistance and diffusion behavior of MoSi2/WSi2/(Nb,X)Si2 compound coating at 1400oC

2021 ◽  
pp. 159498
Author(s):  
Gao Yue ◽  
Xiping Guo ◽  
Yanqiang Qiao
2020 ◽  
Vol 69 (12) ◽  
pp. 2286-2293
Author(s):  
A. V. Severin ◽  
A. N. Vasiliev ◽  
A. V. Gopin ◽  
K. I. Enikeev

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.


2020 ◽  
Vol 65 ◽  
pp. 104119
Author(s):  
Yixiang Zhang ◽  
Jianlu Zhu ◽  
Youmei Peng ◽  
Jun Pan ◽  
Yuxing Li

2017 ◽  
Vol 19 (1) ◽  
pp. 267-275 ◽  
Author(s):  
Kaimin Fan ◽  
Jing Tang ◽  
Shiyun Wu ◽  
Chengfu Yang ◽  
Jiabo Hao

The adsorption and diffusion behavior of Li in a G/BP heterostructure can be modulated by an external electric field.


2013 ◽  
Vol 20 (11) ◽  
pp. 1050-1059 ◽  
Author(s):  
Hai-tao Jiang ◽  
Bao-tong Zhuang ◽  
Xiao-ge Duan ◽  
Yan-xin Wu ◽  
Zheng-xu Cai

2014 ◽  
Vol 90 ◽  
pp. 137-142 ◽  
Author(s):  
Nan Dong ◽  
Caili Zhang ◽  
Hui Liu ◽  
Juan Li ◽  
Xiaolei Wu ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document