Continuously tuned (Tm0.05Sc0.252Y0.698)2O3 ceramic laser with emission peak at 2076 nm

2021 ◽  
pp. 161585
Author(s):  
Angela Pirri ◽  
Roman N. Maksimov ◽  
Vladislav A. Shitov ◽  
Vladimir V. Osipov ◽  
Elisa Sani ◽  
...  
Keyword(s):  
Emission Peak ◽  
Ceramic Laser

Efficient CW laser operation of Yb:LuAG ceramic laser

2012 ◽  
Author(s):  
Hiroaki Nakao ◽  
Akira Shirakawa ◽  
Ken-ichi Ueda ◽  
Hideki Yagi ◽  
Takagimi Yanagitani
Keyword(s):  
Laser Operation ◽  
Cw Laser ◽  
Ceramic Laser

Fabrication and Properties of Zinc Silicate Phosphors through Solid State Reaction

2010 ◽  
Vol 160-162 ◽  
pp. 594-598
Author(s):  
Guo Jian Jiang ◽  
Jia Yue Xu ◽  
Hui Shen ◽  
Yan Zhang ◽  
Lin He Xu ◽  
...  
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Emission Peak ◽  
Zinc Silicate ◽  
Red Phosphor ◽  
Reaction Method ◽  
Long Afterglow ◽  
Luminescent Mechanism ◽  
Silicate Phosphors

Zinc silicate-based (Zn2SiO4:Eu3+) long afterglow phosphors were produced by solid state reaction method. The effects of borax and Eu2O3 additive on the properties of fabricated products have been studied. The results show that, there is not much difference in phase compositions within the borax additive amount; however, their SEM morphologies are different. Borax additive can increase the grain size of the product. Some sintering phenomena could be observed in the sample with Eu2O3 addition. The fluorescence spectroscopy results indicate that, the emission peak of the sample with Eu3+ additive located at 612nm, which may be a good candidate for red phosphor applications. The luminescent mechanism of Zn2SiO4:Eu3+ is also discussed.

scholarly journals Modeling and Measurement of Thermal Effect in a Flashlamp-Pumped Direct-Liquid-Cooled Split-Disk Nd:LuAG Ceramic Laser Amplifier

Photonics ◽  
2021 ◽  
Vol 8 (4) ◽  
pp. 97
Author(s):  
Shengzhe Ji ◽  
Wenfa Huang ◽  
Tao Feng ◽  
Long Pan ◽  
Jiangfeng Wang ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Thermal Effects ◽  
Thermal Deformation ◽  
High Energy ◽  
Gain Medium ◽  
Wavefront Aberration ◽  
Experimental Measurements ◽  
Laser Amplifier ◽  
Design And Optimization ◽  
Ceramic Laser

In this paper, a model to predict the thermal effects in a flashlamp-pumped direct-liquid-cooled split-disk Nd:LuAG ceramic laser amplifier has been presented. In addition to pumping distribution, the model calculates thermal-induced wavefront aberration as a function of temperature, thermal stress and thermal deformation in the gain medium. Experimental measurements are carried out to assess the accuracy of the model. We expect that this study will assist in the design and optimization of high-energy lasers operated at repetition rate.

Influence of the Dispersion of the Size of the Si Nanocrystals on their Emission Spectra

1994 ◽  
Vol 358 ◽  
Author(s):  
J. B. Khurgin ◽  
E. W. Forsythe ◽  
S. I. Kim ◽  
B. S. Sywe ◽  
B. A. Khan ◽  
...  
Keyword(s):  
Systematic Study ◽  
Quantum Confinement ◽  
Emission Spectra ◽  
Emission Peak ◽  
Nanocrystal Size ◽  
Pl Spectra ◽  
Si Nanocrystals ◽  
Average Size ◽  
Size Dispersion ◽  
Confinement Model

ABSTRACTA systematic study of the PL spectra of Si quantum nanocrystals in the SiO2 matrix has been performed. The results have been fitted to a quantum-confinement model that includes the nanocrystal size dispersion rather than a specific size of the nanocrystal. This serves as a strong confirmation of the confinement-induced nature of the PL. It has been shown that if the dispersion is taken into account, the position of the emission peak as well as the PL width can always be correlated with the average size of the nanocrystal.

Room temperature hot-pressed Fe:ZnSe ceramic laser

2021 ◽  
Author(s):  
Krishna Karki ◽  
Shengquan Yu ◽  
Vladimir Fedorov ◽  
Yiquan Wu ◽  
Sergey Mirov
Keyword(s):  
Room Temperature ◽  
Ceramic Laser

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Mohd Ann Amirul Zulffiqal Md Sahar ◽  
Zainuriah Hassan ◽  
Sha Shiong Ng ◽  
Way Foong Lim ◽  
Khai Shenn Lau ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Output ◽  
Emission Peak ◽  
Organic Chemical ◽  
Peak Wavelength ◽  
Content Type ◽  
Light Emitting ◽  
Near Ultraviolet

Purpose The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED). Design/methodology/approach InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition. Findings The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824. Originality/value This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.

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