Low temperature Cu/Ti/Al Ohmic contacts to p-type 4H-SiC

2022 ◽  
pp. 163580
Author(s):  
Fei Cao ◽  
Yang-xi Xu ◽  
Jin-chi Sui ◽  
Xing-ji Li ◽  
Jian-qun Yang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contacts ◽  
P Type

Ohmic contacts simultaneously formed on n-type and p-type 4H-SiC at low temperature

2019 ◽  
Vol 805 ◽  
pp. 999-1003 ◽  
Author(s):  
Yanjing He ◽  
Hongliang Lv ◽  
Xiaoyan Tang ◽  
Qingwen Song ◽  
Yimeng Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contacts ◽  
P Type

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 581-584 ◽  
Author(s):  
Bharat Krishnan ◽  
Siva Prasad Kotamraju ◽  
Galyna Melnychuk ◽  
Neil Merrett ◽  
Yaroslav Koshka
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Metal Contacts ◽  
Atomic Concentration ◽  
Homoepitaxial Growth ◽  
Specific Contact ◽  
Sio2 Mask ◽  
P Type

Low-temperature halo-carbon homoepitaxial growth is suitable for selective epitaxial growth of 4H-SiC using SiO2 mask. A possibility of achieving high values of doping in combination with the selective growth makes it an alternative to ion implantation for selective doping in SiC. In this work, TMA doping in situ during a blanket low-temperature epitaxial growth was utilized to produce heavily Al doped SiC layers for Ohmic contact formation to p-type SiC. Nearly featureless epilayer morphology with Al atomic concentration exceeding 3x1020 cm-3 was obtained after growth at 13000C with the growth rate of 1.5 µm/hr. Ni TLM contacts with a thin adhesion layer of Ti were formed. The as-deposited metal contacts were almost completely Ohmic even before annealing. The specific contact resistance of 2x10-2 Ohm-cm2 and 6x10-5 Ohms-cm2 was achieved without and with contact annealing respectively. The resistivity of the epitaxial layers better than 0.01 Ohm cm was measured for Al atomic concentration of 2.7x1020 cm-3.

scholarly journals Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing

2018 ◽  
Vol 924 ◽  
pp. 389-392 ◽  
Author(s):  
Mattias Ekström ◽  
Shuoben Hou ◽  
Hossein Elahipanah ◽  
Arash Salemi ◽  
Mikael Östling ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Nickel Silicide ◽  
Second Step ◽  
Low Resistance ◽  
Annealing Step ◽  
P Type

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

The Formation and Characterization of Epitaxial Titanium Carbide Contacts to 4H-SiC

2000 ◽  
Vol 622 ◽  
Author(s):  
S.-K. Lee ◽  
E. Danielsson ◽  
C.-M. Zetterling ◽  
M. Östling ◽  
J.-P. Palmquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Titanium Carbide ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Interface Reaction ◽  
Schottky Contacts ◽  
Deposition Method ◽  
P Type

ABSTRACTEpitaxial TiC Ohmic and Schottky contacts to 4H-SiC were formed by a new deposition method, UHV co-evaporation with Ti and C60, at low temperature (< 500°C). We achieved a contact resistivity of 2 × 10−5Δcm2 at 25°C for as deposited Ohmic contacts on Al ion implanted 4H-Silicon carbide. The rectifying behavior of TiC Schottky contacts was also investigated using I-V and C-V. The measured Schottky barrier height (SBH) was 1.26 eV for n-type and 1.65 eV for p-type 4H-SiC using C-V measurements for frequencies ranging from 1kHz to 1MHz. LEED, RBS, XPS, and XRD measurements were performed to analyze composition ratio, interface reaction, and structural properties of the TiC epitaxial layer.

scholarly journals Microstructure and Electrical Properties of Low Temperature Processed Ohmic Contacts to p-Type GaN

ETRI Journal ◽  
2002 ◽  
Vol 24 (5) ◽  
pp. 349-359 ◽  
Author(s):  
Mi-Ran Park Park ◽  
Young-Joo Song Song ◽  
Wayne A. Anderson Anderson
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Ohmic Contacts ◽  
P Type

Low temperature Ni/Si/Al Ohmic contacts to p-type 4H-SiC

2021 ◽  
pp. 108106
Author(s):  
Yang-xi Xu ◽  
Jin-chi Sui ◽  
Fei Cao ◽  
Xing-ji Li ◽  
Jian-qun Yang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contacts ◽  
P Type

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

2004 ◽  
Vol 33 (5) ◽  
pp. 460-466 ◽  
Author(s):  
S. Tsukimoto ◽  
K. Nitta ◽  
T. Sakai ◽  
M. Moriyama ◽  
Masanori Murakami
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

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