Internal-electric-field induced high efficient type-I heterojunction in photocatalysis-self-Fenton reaction: enhanced H2O2 yield, utilization efficiency and degradation performance

: With the development of industrialization, the global environmental pollution and energy crisis are becoming increasingly serious. Organic pollutants pose a serious health threat to human beings and other organisms. The removal of organic pollutants in environment has become a global challenge. The photocatalytic technology has been widely used in the degradation of organic pollutants with its characteristics of simple process, high efficiency, thorough degradation and no secondary pollution. However, the single photocatalyst represented by TiO2 has disadvantages of low light utilization rate and high recombination rate of photocarriers. Building heterojunction is considered one of the most effective methods to enhance the photocatalytic performance of single photocatalyst, which can improve the separation efficiency of photocarriers and utilization of visible light. The classical heterojunction can be divided into four different cases: type I, typeⅡ, p–n heterojunctions and Z-scheme junction. In this paper, the recent progress in the treatment of organic pollution by heterostructure photocatalysts is summarized and the mechanism of heterostructure photocatalysts for the treatment of organic pollutants is reviewed. It is expected that this paper can deepen the understanding of heterostructure photocatalysts and provide guidance for high efficient photocatalytic degradation of organic pollutants in the future.

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Accurate guided alternating atomic layer enhance internal electric field to steering photogenerated charge separation for enhance photocatalytic activity

Applied Catalysis B Environmental ◽

10.1016/j.apcatb.2021.120536 ◽

2021 ◽

pp. 120536

Author(s):

Xiaoming Gao ◽

Kailong Gao ◽

Wei Zhu ◽

Chunhua Liang ◽

Qiangen Li ◽

...

Keyword(s):

Photocatalytic Activity ◽

Electric Field ◽

Charge Separation ◽

Atomic Layer ◽

Internal Electric Field ◽

Photogenerated Charge Separation

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Effect of the double grading on the internal electric field and on the carrier collection in CIGS solar cells

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2020.110948 ◽

2021 ◽

Vol 223 ◽

pp. 110948

Author(s):

Alban Lafuente-Sampietro ◽

Katsuhisa Yoshida ◽

Shenghao Wang ◽

Shogo Ishizuka ◽

Hajime Shibata ◽

...

Keyword(s):

Solar Cells ◽

Electric Field ◽

Internal Electric Field ◽

Carrier Collection ◽

Cigs Solar Cells

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Interfacial chemical bond and internal electric field modulated Z-scheme Sv-ZnIn2S4/MoSe2 photocatalyst for efficient hydrogen evolution

Nature Communications ◽

10.1038/s41467-021-24511-z ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Xuehua Wang ◽

Xianghu Wang ◽

Jianfeng Huang ◽

Shaoxiang Li ◽

Alan Meng ◽

...

Keyword(s):

Charge Transfer ◽

Electric Field ◽

Hydrogen Evolution ◽

Density Functional ◽

Monochromatic Light ◽

Density Functional Theory Calculations ◽

Internal Electric Field ◽

Apparent Quantum Yield ◽

Paramagnetic Resonance ◽

High Hydrogen

AbstractConstruction of Z-scheme heterostructure is of great significance for realizing efficient photocatalytic water splitting. However, the conscious modulation of Z-scheme charge transfer is still a great challenge. Herein, interfacial Mo-S bond and internal electric field modulated Z-scheme heterostructure composed by sulfur vacancies-rich ZnIn2S4 and MoSe2 was rationally fabricated for efficient photocatalytic hydrogen evolution. Systematic investigations reveal that Mo-S bond and internal electric field induce the Z-scheme charge transfer mechanism as confirmed by the surface photovoltage spectra, DMPO spin-trapping electron paramagnetic resonance spectra and density functional theory calculations. Under the intense synergy among the Mo-S bond, internal electric field and S-vacancies, the optimized photocatalyst exhibits high hydrogen evolution rate of 63.21 mmol∙g−1·h−1 with an apparent quantum yield of 76.48% at 420 nm monochromatic light, which is about 18.8-fold of the pristine ZIS. This work affords a useful inspiration on consciously modulating Z-scheme charge transfer by atomic-level interface control and internal electric field to signally promote the photocatalytic performance.

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High-efficient ultraviolet (UV) photocathode using optimum radial shaped AlxGa1-xN nanostructure with assisted external electric field

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106783 ◽

2021 ◽

Vol 150 ◽

pp. 106783

Author(s):

Zhisheng Lv ◽

Lei Liu ◽

Xingyue Zhangyang ◽

Feifei Lu ◽

Jian Tian

Keyword(s):

Electric Field ◽

External Electric Field ◽

High Efficient

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Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽

10.3390/en14030638 ◽

2021 ◽

Vol 14 (3) ◽

pp. 638

Author(s):

Sanam SaeidNahaei ◽

Hyun-Jun Jo ◽

Sang Jo Lee ◽

Jong Su Kim ◽

Sang Jun Lee ◽

...

Keyword(s):

Solar Cell ◽

Electric Field ◽

Electric Fields ◽

Bias Voltage ◽

Tunnel Junction ◽

Photogenerated Carrier ◽

Internal Electric Field ◽

Junction Solar Cell ◽

Photoreflectance Spectroscopy ◽

Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

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