Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

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Some properties of gallium nitride films grown on (0 0 0 1) oriented sapphire substrates by gas source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00165-6 ◽

1997 ◽

Vol 180 (1) ◽

pp. 27-33 ◽

Cited By ~ 6

Author(s):

S.F. Yoon ◽

X.B. Li ◽

M.Y Kong

Keyword(s):

Gallium Nitride ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Sapphire Substrates ◽

Gas Source

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Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/bf02666622 ◽

1996 ◽

Vol 25 (3) ◽

pp. 467-477 ◽

Cited By ~ 24

Author(s):

S. Sethi ◽

P. K. Bhattacharya

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Erbium Doped ◽

Device Applications

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Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.365575 ◽

1997 ◽

Vol 82 (11) ◽

pp. 5472-5479 ◽

Cited By ~ 341

Author(s):

E. J. Tarsa ◽

B. Heying ◽

X. H. Wu ◽

P. Fini ◽

S. P. DenBaars ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Homoepitaxial Growth ◽

Stable Conditions

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Gas-Source Molecular Beam Epitaxy of Electronic Devices

MRS Proceedings ◽

10.1557/proc-421-3 ◽

1996 ◽

Vol 421 ◽

Cited By ~ 4

Author(s):

E.A. Beam ◽

B. Brar ◽

T.P.E. Broekaert ◽

H.F. Chau ◽

W. Liu ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Speed ◽

Molecular Beam ◽

Electronic Device ◽

Field Effect Transistors ◽

Tunneling Diodes ◽

Gas Source ◽

Device Structures ◽

Double Heterojunction

AbstractGas-source molecular beam epitaxy (GSMBE) has been developed into a useful tool for the growth of both optical and electronic device structures. In this paper, we report on the use of tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in GSMBE for the growth of electronic device structures with state-of-the-art performance. Device structures based on both the In0.48Ga0.52P/GaAs and In0.53Ga 0.47As/InP lattice matched materials systems are described. The GSMBE system is based on the use of elemental Group-rn sources and employs thermal crackers for precracking TBA and TBP. Dopant sources include both elemental (Sn and Be) and vapor (CBr4 and SiBr4) sources. Device structures fabricated in the In0.48Ga0.52P/GaAs materials system include single- and double- heterojunction bipolar transistors (SHBTs and DHBTs). Device structures fabricated in the In0.53Ga0.47As/InP materials system include SHBTs, DHBTs, heterojunction field effect transistors (HFETs), and both planar and lateral resonant tunneling diodes (RTDs.) Vertically integrated HFET and multi-RTD heterostructures for high speed logic/memory are also described.

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