Growth of P-type 4H–SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping

We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe into the growth cell. While the gas phase composition is basically fixed in conventional physical vapor transport (PVT) growth by crucible design and temperature field, the gas inlet of the MPVT configuration allows the direct tuning of the gas phase composition for improved growth conditions. The phrase "additional" means that only small amounts of extra gases are supplied in order to fine-tune the gas phase composition. We discuss the experimental implementation of the extra gas pipe and present numerical simulations of temperature field and mass transport in the new growth configuration. The potential of the growth technique will be outlined by showing the improvements achieved for p-type doping of 4H-SiC with aluminum, i.e. [Al]=9⋅1019cm-3 and ρ<0.2Ωcm, and n-type doping of SiC with phosphorous, i.e. [P]=7.8⋅1017cm-3.

Download Full-text

ChemInform Abstract: Electrophysical Properties of GeSexTe1-x Single Crystals Grown by Physical Vapor Transport (PVT).

ChemInform ◽

10.1002/chin.199312007 ◽

2010 ◽

Vol 24 (12) ◽

pp. no-no

Author(s):

H. WIEDEMEIER ◽

Y. R. GE

Keyword(s):

Single Crystals ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Electrophysical Properties

Download Full-text

Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method

Acta Mechanica Sinica ◽

10.1007/s10409-005-0090-2 ◽

2006 ◽

Vol 22 (1) ◽

pp. 40-45 ◽

Cited By ~ 4

Author(s):

Zibing Zhang ◽

Jing Lu ◽

Qisheng Chen ◽

V. Prasad

Keyword(s):

Single Crystals ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Thermoelastic Stresses ◽

Transport Method ◽

Vapor Transport Method

Download Full-text

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.633 ◽

2006 ◽

Vol 527-529 ◽

pp. 633-636 ◽

Cited By ~ 5

Author(s):

Sylvie Contreras ◽

Marcin Zielinski ◽

Leszek Konczewicz ◽

Caroline Blanc ◽

Sandrine Juillaguet ◽

...

Keyword(s):

Temperature Dependence ◽

Hall Effect ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Temperature Dependent ◽

Large N ◽

Hall Effect Measurements ◽

Van Der Pauw ◽

P Type ◽

Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

Download Full-text