Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

Temperature-dependent Hall-effect measurements of p-type multicrystalline compensated solar grade silicon

2012 ◽  
Vol 21 (7) ◽  
pp. 1469-1477 ◽  
Author(s):  
Chiara Modanese ◽  
Maurizio Acciarri ◽  
Simona Binetti ◽  
Anne-Karin Søiland ◽  
Marisa Di Sabatino ◽  
...  
Keyword(s):  
Hall Effect ◽  
Solar Grade Silicon ◽  
Temperature Dependent ◽  
Hall Effect Measurements ◽  
Grade Silicon ◽  
P Type

Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC

2004 ◽  
Vol 457-460 ◽  
pp. 677-680 ◽  
Author(s):  
L. Kasamakova-Kolaklieva ◽  
L. Storasta ◽  
Ivan G. Ivanov ◽  
Björn Magnusson ◽  
Sylvie Contreras ◽  
...  
Keyword(s):  
Hall Effect ◽  
Temperature Dependent ◽  
Hall Effect Measurements ◽  
P Type

Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates

2006 ◽  
Vol 527-529 ◽  
pp. 505-508
Author(s):  
W.C. Mitchel ◽  
William D. Mitchell ◽  
S.R. Smith ◽  
G.R. Landis ◽  
A.O. Evwaraye ◽  
...  
Keyword(s):  
Hall Effect ◽  
Deep Level ◽  
Activation Energies ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Admittance Spectroscopy ◽  
Temperature Dependent ◽  
Thermally Stimulated Current ◽  
Commercial Grade ◽  
Transport Technique

A variety of 4H-SiC samples from undoped crystals grown by the physical vapor transport technique have been studied by temperature dependent Hall effect, optical and thermal admittance spectroscopy and thermally stimulated current. In most samples studied the activation energies were in the range 0.9 - 1.6 eV expected for commercial grade HPSI 4H-SiC. However, in several samples from developmental crystals a previously unreported deep level at EC-0.55 ± 0.01 eV was observed. Thermal admittance spectroscopy detected one level with an energy of about 0.53 eV while optical admittance spectroscopy measurements resolved two levels at 0.56 and 0.64 eV. Thermally stimulated current measurements made to study compensated levels in the material detected several peaks at energies in the range 0.2 to 0.6 eV.

Hall Effect Investigation of Doped and Undoped ßB-FESI2

1995 ◽  
Vol 402 ◽  
Author(s):  
S. Brehme ◽  
L. Ivanenko ◽  
Y. Tomm ◽  
G.-U. Reinsperger ◽  
P. Staulß ◽  
...  
Keyword(s):  
Hall Effect ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Preparation Process ◽  
Si Substrates ◽  
Mobility Data ◽  
Undoped Material ◽  
Hall Effect Measurements ◽  
P Type

AbstractPolycrystalline ß-FeSi2 layers prepared by codeposition of Si and Fe on cold and hot Si substrates and ß-FeSi2, crystals grown by chemical vapor transport were investigated. Resistivity and Hall effect measurements revealed the p-type conductivity of undoped material and the influence of some dopants of the iron group. The activation energy of a Cr-related acceptor was determined to about 85 meV. The mobility data were found to depend significantly on the purity of the preparation process.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions

2005 ◽  
Vol 483-485 ◽  
pp. 25-30 ◽  
Author(s):  
Peter J. Wellmann ◽  
Thomas L. Straubinger ◽  
Patrick Desperrier ◽  
Ralf Müller ◽  
Ulrike Künecke ◽  
...  
Keyword(s):  
Temperature Field ◽  
Phase Composition ◽  
Gas Phase ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Process Conditions ◽  
Growth Technique ◽  
Experimental Implementation ◽  
P Type

We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe into the growth cell. While the gas phase composition is basically fixed in conventional physical vapor transport (PVT) growth by crucible design and temperature field, the gas inlet of the MPVT configuration allows the direct tuning of the gas phase composition for improved growth conditions. The phrase "additional" means that only small amounts of extra gases are supplied in order to fine-tune the gas phase composition. We discuss the experimental implementation of the extra gas pipe and present numerical simulations of temperature field and mass transport in the new growth configuration. The potential of the growth technique will be outlined by showing the improvements achieved for p-type doping of 4H-SiC with aluminum, i.e. [Al]=9⋅1019cm-3 and ρ<0.2Ωcm, and n-type doping of SiC with phosphorous, i.e. [P]=7.8⋅1017cm-3.

Structural, electrical, and optical property studies of indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures

1999 ◽  
Vol 14 (7) ◽  
pp. 2778-2782 ◽  
Author(s):  
M. S. Han ◽  
T. W. Kang ◽  
T. W. Kim
Keyword(s):  
Hall Effect ◽  
Ftir Spectra ◽  
Epitaxial Layers ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Vacancy Defects ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Transmission Measurements ◽  
Van Der Pauw

Transmission electron microsopy (TEM), Hall effect, and Fourier transform infrared (FTIR) transmission measurements were performed to investigate the structural, electrical, and optical properties of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on Cd0.96Zn0.04Te (211) B substrates by molecular-beam epitaxy. The TEM measurements showed that high-quality Hg0.8Cd0.2Te epitaxial layers with interfacial abruptnesses were grown on the Cd0.96Zn0.04Te substrates. The Van der Pauw Hall effect measurements on typical indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures with a doping concentration of 6 × 1016 cm−3 at 10 K in a magnetic field of 0.5 T yielded a carrier density and a mobility of 2.2 × 1016 cm−3 and 40,000 cm2/V s, respectively. The FTIR spectra showed that the absorption edges of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures shifted to a shorter wavelength range than those of the undoped samples, which was caused by the Burstein–Moss effect. The FTIR spectra also showed that the transmittance intensities of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures increased compared with those of the undoped heterostructures, which is due to the compensation of the Hg vacancy defects by the indium atoms. These results indicate that the indium-doped Hg0.8Cd0.2Te epitaxial layers were high-quality n-type layers and that p-HgxCd1−xTe epilayers can be grown on indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures for the fabrication of HgxCd1−xTe photoconductors and photodiodes.

TEMPERATURE DEPENDENCE OF THE HALL EFFECT IN La2−xSrxCuO4 AND ABa2Cu3O7 (A=Y, Gd) HIGH TEMPERATURE SUPERCONDUCTORS

1987 ◽  
Vol 01 (03n04) ◽  
pp. 1067-1070 ◽  
Author(s):  
M. Petravić ◽  
A. Hamzić ◽  
B. Leontić ◽  
L. Forró
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Normal State ◽  
High Temperature Superconductors ◽  
The Other ◽  
Hall Constant ◽  
High Temperature Superconducting ◽  
Superconducting Ceramics ◽  
Hall Effect Measurements

We present Hall effect measurements in the normal state of the high temperature superconducting ceramics La2−xSrxCuO4 (x=0, 0.1, 0.15, 0.2, 0.25, 0.3), YBa2Cu3o7 and GdBa2Cu3O7 . The first family has temperature independent Hall constant for x>0, while in the other two systems RH is proportional to 1/T. From the Hall effect it follows that the transport in these compounds is hole-like.

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

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