Growth and physical properties of BiFeO3 thin films directly on Si substrate

2019 ◽  
Vol 522 ◽  
pp. 110-116 ◽  
Author(s):  
Xiaokang Yao ◽  
Can Wang ◽  
Shilu Tian ◽  
Yong Zhou ◽  
Xiaomei Li ◽  
...  
2009 ◽  
Vol 1199 ◽  
Author(s):  
Seiji Nakashima ◽  
Hironori Fujisawa ◽  
Jung Min Park ◽  
Takeshi Kanashima ◽  
Masanori Okuyama ◽  
...  

AbstractWe have investigated relationships between leakage current and microstructure or domain structure of BiFeO3 (BFO) thin films, and leakage current mappings of BFO thin films have been performed by current sensitive AFM. 350-nm-thick and 250-nm-thick BFO thin films were prepared on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition (PLD) and chemical solution deposition (CSD), respectively. Average grain size of PLD-BFO thin film is about 480 nm, which is the same as the film thickness. From the leakage current mapping at a bias voltage of -16 Vdc, leakage current of the BFO thin film flows through not only grain boundary but also the grain itself. On the other hand, CSD-BFO thin film shows rosette structure and small size grains. From the leakage current mapping at a bias voltage of -10 Vdc, leakage current flows along boundaries of the rosette structures. These results indicate that leakage current of BFO strongly depends on its microstructure.


2010 ◽  
Vol 518 (24) ◽  
pp. 7412-7415 ◽  
Author(s):  
Yen-Ting Liu ◽  
San-Yuan Chen ◽  
Hsin-Yi Lee

2011 ◽  
Vol 61 (4) ◽  
pp. 398-405
Author(s):  
Yu Ri BAE ◽  
Jin Won KIM ◽  
Dalhyun DO ◽  
Sang Su KIM*

Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.


2019 ◽  
Author(s):  
D.O. Alikin ◽  
Y. Fomichov ◽  
S.P. Reis ◽  
A.S. Abramov ◽  
D.S. Chezganov ◽  
...  

2013 ◽  
Vol 9 (4) ◽  
pp. 532-535
Author(s):  
N. Ali ◽  
W. A. A. Syed ◽  
I. Murtaza ◽  
S. T. Hussain ◽  
N. Ahmad ◽  
...  

1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.


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