Thermal Analysis for Designing the Hot-Zone of a Silicon Czochralski Crystal Furnace
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The present work is aimed at developing an axial symmetric thermal analysis model for designing the hot-zone of a silicon crystal growth furnace. An analysis model is developed which can be used to predict the approximate pulling rate and power consumption during silicon crystal growth process when utilizing the Czochralski (CZ) method. In addition, the effectiveness of this analysis model is experimentally confirmed.
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2003 ◽
Vol 42
(Part 1, No. 3)
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pp. 1133-1138
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2014 ◽
Vol 401
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pp. 120-123
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2012 ◽
Vol 2012
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pp. 1-6
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2011 ◽
Vol 318
(1)
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pp. 318-323
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