High-temperature post-annealing effect on the surface morphology and photoresponse and electrical properties of B-doped BaSi2 films grown by molecular beam epitaxy under various Ba-to-Si deposition rate ratios

2021 ◽  
pp. 126429
Author(s):  
Shunsuke Narita ◽  
Yudai Yamashita ◽  
Sho Aonuki ◽  
Noriyuki Saitoh ◽  
Kaoru Toko ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Deposition Rate ◽  
Molecular Beam ◽  
Annealing Effect ◽  
Post Annealing ◽  
Rate Ratios

Improving the Quality of a Heteroepitaxial CaF2 Overlayer by Rapid Post Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
Loren Pfeiffer ◽  
Julia M. Phillips ◽  
T.P. Smith ◽  
W. M. Augustyniak ◽  
K. W. West
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Mechanical Stress ◽  
Short Duration ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Dielectric Breakdown ◽  
Post Annealing ◽  
Random Direction

ABSTRACTWe show that post anneals of short duration at high temperature can markedly improve the quality of CaF2 films grown by molecular beam epitaxy (MBE) on Si (100). Anneals at 1100°C for 20 sec in an Ar ambient improved χmin, the ratio of backscattered 1.8 MeV He4 ions in the aligned to random direction, from as-grown values of .07 to .26, to post post-anneal values of .03 to .045. This is the best χmin yet reported for the CaF2:Si system. The post-annealed films also show improved resistance to chemical etching and mechanical stress, and increased dielectric breakdown voltages.

Characterization of Cu2O Thin Film Grown by Molecular Beam Epitaxy

2013 ◽  
Vol 582 ◽  
pp. 157-160 ◽  
Author(s):  
Takumi Oshima ◽  
Masaya Nohara ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Deposition Rate ◽  
Crystal Orientation ◽  
Molecular Beam ◽  
Good Crystallinity ◽  
Relationship Of

We report the growth of Cu2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu2O(110) // MgO(100). The film quality and electrical properties of Cu2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.

Mercury annealing effect on the electrical properties of HgCdTe grown by molecular beam epitaxy

1992 ◽  
Vol 117 (1-4) ◽  
pp. 222-226 ◽  
Author(s):  
T. Sasaki ◽  
N. Oda ◽  
M. Kawano ◽  
S. Sone ◽  
T. Kanno ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Annealing Effect

Electrical Properties of Thin Intermetallic Platinum-Gallium Films Grown by MBE on Gallium Arsenide and Silicon.

1989 ◽  
Vol 148 ◽  
Author(s):  
L. P. Sadwick ◽  
R. M. Ostrom ◽  
B. J. Wu ◽  
K. L. Wang ◽  
R. S. Williams
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
High Temperature ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Crystal Quality ◽  
Partial List

ABSTRACTThin films of the platinum-gallium (Pt-Ga) family have been grown on gallium arsenide (GaAs) and silicon (Si) by molecular beam epitaxy (MBE). A partial list of potential uses for these and similar structures is high temperature stable photodetectors, Schottky andOhmic contacts, epitaxial buried contacts, and field effect transistors. In this work the electrical properties of Pt2Ga, PtGa, and PtGa2 on both GaAs andSi will be presented. The resistivity of these thin films has been found to depend on the crystal quality and phase of the material.

scholarly journals Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films

2018 ◽  
Vol 123 (4) ◽  
pp. 045703 ◽  
Author(s):  
Ryota Takabe ◽  
Tianguo Deng ◽  
Komomo Kodama ◽  
Yudai Yamashita ◽  
Takuma Sato ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Deposition Rate ◽  
Molecular Beam ◽  
Spectral Response ◽  
Epitaxial Films ◽  
Rate Ratios

scholarly journals Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

2016 ◽  
Vol 24 (1) ◽  
Author(s):  
D. Benyahia ◽  
Ł. Kubiszyn ◽  
K. Michalczewski ◽  
A. Kębłowski ◽  
P. Martyniuk ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Flux Ratio ◽  
X Ray Diffraction ◽  
Group V

Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

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