Differential activity and expression of antioxidant enzymes and alteration in osmolyte accumulation under high temperature stress in wheat seedlings

2014 ◽  
Vol 60 (3) ◽  
pp. 653-659 ◽  
Author(s):  
Chunwei Wang ◽  
Daxing Wen ◽  
Aiqing Sun ◽  
Xiaoyu Han ◽  
Jiedao Zhang ◽  
...  
Keyword(s):  
Antioxidant Enzymes ◽  
High Temperature ◽  
Temperature Stress ◽  
High Temperature Stress ◽  
Wheat Seedlings ◽  
Osmolyte Accumulation

Biochemical and molecular responses of herbaceous peony to high temperature stress

2016 ◽  
Vol 96 (3) ◽  
pp. 474-484 ◽  
Author(s):  
Yan-Qing Wu ◽  
Da-Qiu Zhao ◽  
Chen-Xia Han ◽  
Jun Tao
Keyword(s):  
Antioxidant Enzymes ◽  
High Temperature ◽  
Temperature Stress ◽  
Theoretical Basis ◽  
High Temperature Stress ◽  
Cellular Structures ◽  
Molecular Responses ◽  
Chl A ◽  
Antioxidant Enzymes Activities ◽  
Heat Tolerant

To clarify the theoretical basis of the differences in high temperature stress tolerance among herbaceous peony (Paeonia lactiflora Pall.), we investigated the heat injury index of twelve P. lactiflora cultivars. Of these, heat-tolerant ‘Zifengyu’ and moderately heat-tolerant ‘Hongyanzhenghui’ were selected to study the biochemical and molecular responses to high temperature stress. ‘Zifengyu’ had reduced malondialdehyde (MDA) content, increased soluble sugar, chlorophyll (Chl) a, Chl b, Chl a + b. and carotenoid contents, as well as elevated antioxidant enzymes activities, photosynthetic rate (Pn), transpiration rate (Tr) and relatively intact cellular structures compared with ‘Hongyanzhenghui’, especially when the temperature was the highest. Additionally, we isolated partial cDNAs of two heat shock protein genes (HSP60 and HSP90) from P. lactiflora, which were 880-bp and 1077-bp nucleotides in length, respectively. The expression levels of PlHSP60, PlHSP70 and PlHSP90 were lower in ‘Zifengyu’ than in ‘Hongyanzhenghui’ for the first three of four developmental stages examined. These results indicated that heat-tolerant P. lactiflora cultivar could effectively scavenge reactive oxygen species (ROS), protect cellular structures, reduce thermal damage and delay the death of plants by enhancing antioxidant enzymes activities and HSP expression under high temperature stress. These findings provide a theoretical basis for breeding heat-tolerant P. lactiflora cultivars.

Protective role of antioxidant enzymes under high temperature stress

Plant Science ◽  
2006 ◽  
Vol 171 (3) ◽  
pp. 382-388 ◽  
Author(s):  
Moaed Almeselmani ◽  
P.S. Deshmukh ◽  
R.K. Sairam ◽  
S.R. Kushwaha ◽  
T.P. Singh
Keyword(s):  
Antioxidant Enzymes ◽  
High Temperature ◽  
Temperature Stress ◽  
High Temperature Stress ◽  
Protective Role

Assessment of wheat (Triticum aestivum L.) genotypes for high temperature stress tolerance using physico-chemical analysis

2020 ◽  
Vol 53 (2) ◽  
Author(s):  
Khalil Ahmed Laghari ◽  
Abdul Jabbar Pirzada ◽  
Mahboob Ali Sial ◽  
Muhammad Athar Khan ◽  
Jamal Uddin Mangi
Keyword(s):  
Triticum Aestivum ◽  
High Temperature ◽  
Chemical Analysis ◽  
Stress Tolerance ◽  
Temperature Stress ◽  
Triticum Aestivum L ◽  
High Temperature Stress ◽  
Physico Chemical

Genome-wide identification and analysis of maize PAL gene family and its expression profile in response to high-temperature stress

2020 ◽  
Vol 52 (5) ◽  
Author(s):  
De-Gong Wu ◽  
Qiu-Wen Zhan ◽  
Hai-Bing Yu ◽  
Bao-Hong Huang ◽  
Xin-Xin Cheng ◽  
...  
Keyword(s):  
High Temperature ◽  
Gene Family ◽  
Temperature Stress ◽  
Expression Profile ◽  
High Temperature Stress ◽  
Genome Wide

Impact of Metal Pad Etch-Induced Plasma Damage on Dynamic Retention Time Degradation during High Temperature Stress in High Density DRAM Technology

2005 ◽  
Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Retention Time ◽  
High Temperature Stress ◽  
High Density ◽  
Cell Junction ◽  
Antenna Effect ◽  
Plasma Damage ◽  
Root Cause ◽  
Wafer Processing

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.

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