ND-π-D molecular layer electronically bridges the NiO hole transport layer and the perovskite layer towards high performance photovoltaics

2021 ◽  
Author(s):  
Rongguo Xu ◽  
Xiuwen Xu ◽  
Ruixi Luo ◽  
Yu Li ◽  
Gaopeng Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Molecular Layer ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Perovskite Layer

scholarly journals Device Modeling and Design of Inverted Solar Cell Based on Comparative Experimental Analysis between Effect of Organic and Inorganic Hole Transport Layer on Morphology and Photo-Physical Property of Perovskite Thin Film

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2191
Author(s):  
Xiaolan Wang ◽  
Xiaoping Zou ◽  
Jialin Zhu ◽  
Chunqian Zhang ◽  
Jin Cheng ◽  
...  
Keyword(s):  
Light Absorption ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Functional Layer ◽  
Perovskite Layer ◽  
The Impact

It is crucial to find a good material as a hole transport layer (HTL) to improve the performance of perovskite solar cells (PSCs), devices with an inverted structure. Polyethylene dioxythiophene-poly (styrene sulfonate) (PEDOT:PSS) and inorganic nickel oxide (NiOx) have become hotspots in the study of hole transport materials in PSCs on account of their excellent properties. In our research, NiOx and PEDOT: PSS, two kinds of hole transport materials, were prepared and compared to study the impact of the bottom layer on the light absorption and morphology of perovskite layer. By the way, some experimental parameters are simulated by wx Analysis of Microelectronic and Photonic Structures (wxAMPS). In addition, thin interfacial layers with deep capture levels and high capture cross sections were inserted to simulate the degradation of the interface between light absorption layer and PEDOT:PSS. This work realizes the combination of experiment and simulation. Exploring the mechanism of the influence of functional layer parameters plays a vital part in the performance of devices by establishing the system design. It can be found that the perovskite film growing on NiOx has a stronger light absorption capacity, which makes the best open-circuit voltage of 0.98 V, short-circuit current density of 24.55 mA/cm2, and power conversion efficiency of 20.01%.

High-performance inverted planar perovskite solar cells without a hole transport layer via a solution process under ambient conditions

2015 ◽  
Vol 3 (38) ◽  
pp. 19294-19298 ◽  
Author(s):  
Xichang Bao ◽  
Qianqian Zhu ◽  
Meng Qiu ◽  
Ailing Yang ◽  
Yujin Wang ◽  
...  
Keyword(s):  
Relative Humidity ◽  
High Performance ◽  
Perovskite Solar Cells ◽  
Solution Process ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Ambient Conditions ◽  
High Quality ◽  
Ito Glass

High-quality CH3NH3PbI3 perovskite films were directly prepared on simple treated ITO glass in air under a relative humidity of lower than 30%.

scholarly journals Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Amir Muhammad Afzal ◽  
In-Gon Bae ◽  
Yushika Aggarwal ◽  
Jaewoo Park ◽  
Hye-Ryeon Jeong ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Bias Voltage ◽  
High Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Zero Bias ◽  
Decay Times ◽  
Order Of Magnitude ◽  
Self Powered

AbstractHybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

MoS2 incorporated hybrid hole transport layer for high performance and stable perovskite solar cells

2018 ◽  
Vol 246 ◽  
pp. 195-203 ◽  
Author(s):  
Dian Wang ◽  
Naveen Kumar Elumalai ◽  
Md Arafat Mahmud ◽  
Haimang Yi ◽  
Mushfika Baishakhi Upama ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer

scholarly journals CuI/Spiro-OMeTAD Double-Layer Hole Transport Layer to Improve Photovoltaic Performance of Perovskite Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 978
Author(s):  
Chaoqun Lu ◽  
Weijia Zhang ◽  
Zhaoyi Jiang ◽  
Yulong Zhang ◽  
Cong Ni
Keyword(s):  
Solar Cells ◽  
Double Layer ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Photoelectric Conversion Efficiency ◽  
Photoelectric Conversion ◽  
Perovskite Layer

The hole transport layer (HTL) is one of the main factors affecting the efficiency and stability of perovskite solar cells (PSCs). However, obtaining HTLs with the desired properties through current preparation techniques remains a challenge. In the present study, we propose a new method which can be used to achieve a double-layer HTL, by inserting a CuI layer between the perovskite layer and Spiro-OMeTAD layer via a solution spin coating process. The CuI layer deposited on the surface of the perovskite film directly covers the rough perovskite surface, covering the surface defects of the perovskite, while a layer of CuI film avoids the defects caused by Spiro-OMetad pinholes. The double-layer HTLs improve roughness and reduce charge recombination of the Spiro-OMeTAD layer, thereby resulting in superior hole extraction capabilities and faster hole mobility. The CuI/Spiro-OMeTAD double-layer HTLs-based devices were prepared in N2 gloveboxes and obtained an optimized PCE (photoelectric conversion efficiency) of 17.44%. Furthermore, their stability was improved due to the barrier effect of the inorganic CuI layer on the entry of air and moisture into the perovskite layer. The results demonstrate that another deposited CuI film is a promising method for realizing high-performance and air-stable PSCs.

scholarly journals Charge extraction via graded doping of hole transport layers gives highly luminescent and stable metal halide perovskite devices

2019 ◽  
Vol 5 (2) ◽  
pp. eaav2012 ◽  
Author(s):  
Mojtaba Abdi-Jalebi ◽  
M. Ibrahim Dar ◽  
Satyaprasad P. Senanayak ◽  
Aditya Sadhanala ◽  
Zahra Andaji-Garmaroudi ◽  
...  
Keyword(s):  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Continuous Illumination ◽  
Hole Transport Layer ◽  
Perovskite Layer ◽  
Metal Halide Perovskite ◽  
Hole Transport Layers ◽  
Interfacial Defects ◽  
Extended Power

One source of instability in perovskite solar cells (PSCs) is interfacial defects, particularly those that exist between the perovskite and the hole transport layer (HTL). We demonstrate that thermally evaporated dopant-free tetracene (120 nm) on top of the perovskite layer, capped with a lithium-doped Spiro-OMeTAD layer (200 nm) and top gold electrode, offers an excellent hole-extracting stack with minimal interfacial defect levels. For a perovskite layer interfaced between these graded HTLs and a mesoporous TiO2 electron-extracting layer, its photoluminescence yield reaches 15% compared to 5% for the perovskite layer interfaced between TiO2 and Spiro-OMeTAD alone. For PSCs with graded HTL structure, we demonstrate efficiency of up to 21.6% and an extended power output of over 550 hours of continuous illumination at AM1.5G, retaining more than 90% of the initial performance and thus validating our approach. Our findings represent a breakthrough in the construction of stable PSCs with minimized nonradiative losses.

scholarly journals Facile NiOx Sol-Gel Synthesis Depending on Chain Length of Various Solvents without Catalyst for Efficient Hole Charge Transfer in Perovskite Solar Cells

Polymers ◽  
2018 ◽  
Vol 10 (11) ◽  
pp. 1227 ◽  
Author(s):  
Byung Kim ◽  
Woongsik Jang ◽  
Dong Wang
Keyword(s):  
Solar Cells ◽  
Chain Length ◽  
Short Circuit ◽  
Sol Gel ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Perovskite Layer

Nickel oxide (NiOx)–based perovskite solar cells (PSCs) have recently gained considerable interest, and exhibit above 20% photovoltaic efficiency. However, the reported syntheses of NiOx sol-gel used toxic chemicals for the catalysts during synthesis, which resulted in a high-temperature annealing requirement to remove the organic catalysts (ligands). Herein, we report a facile “NiOx sol-gel depending on the chain length of various solvents” method that eschews toxic catalysts, to confirm the effect of different types of organic solvents on NiOx synthesis. The optimized conditions of the method resulted in better morphology and an increase in the crystallinity of the perovskite layer. Furthermore, the use of the optimized organic solvent improved the absorbance of the photoactive layer in the PSC device. To compare the electrical properties, a PSC was prepared with a p-i-n structure, and the optimized divalent alcohol-based NiOx as the hole transport layer. This improved the charge transport compared with that for the typical 1,2-ethanediol (ethylene glycol) used in earlier studies. Finally, the optimized solvent-based NiOx enhanced device performance by increasing the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF), compared with those of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)–based devices.

scholarly journals Efficient Solution Processed CH3NH3PbI3 Perovskite Solar Cells with PolyTPD Hole Transport Layer

2019 ◽  
Vol 74 (8) ◽  
pp. 665-672 ◽  
Author(s):  
Julian Höcker ◽  
David Kiermasch ◽  
Philipp Rieder ◽  
Kristofer Tvingstedt ◽  
Andreas Baumann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Coverage ◽  
Energy Levels ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Perovskite Layer ◽  
Solvent Engineering ◽  
Highest Occupied Molecular Orbital

AbstractThe organic and hydrophobic polymer poly[N, N′-bis(4-butilphenyl)-N, N′-bis(phenyl)-benzidine] (polyTPD) represents a promising hole transport layer (HTL) for perovskite photovoltaics due to its suitable energy levels, whereby its highest occupied molecular orbital level matches well with the valence band level of methylammonium lead triiodide (CH3NH3PbI3, MAPbI3) perovskite. However, processing a perovskite layer from the solution on the surface of this organic material, is found to be difficult due to the surface properties of the latter. In this study, we evaluate efficient p-i-n type MAPbI3 perovskite solar cells employing differently processed polyTPD layers. We found that the surface coverage of the MAPbI3 perovskite layer strongly depends on the preparation method of the underlying polyTPD layer. By varying the solvents for the polyTPD precursor, its concentration, and by applying an optimised two-step perovskite deposition technique we increased both the surface coverage of the perovskite layer as well as the power conversion efficiency (PCE) of the corresponding solar cell devices. Our simple solvent-engineering approach demonstrates that no further interface modifications are needed for a successful preparation of efficient planar photovoltaic devices with PCEs in the range of 15 %–16 %.

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