Processing of highly oriented (K,Na)NbO3 thin films using a tailored metal-alkoxide precursor solution

ABSTRACTThe evolution of the microstructure of sol-gel derived LiNbO3 thin films was investigated to understand the growth of epitaxial films. LiNbO3 films were prepared from a precursor solution of lithium ethoxide and niobium pentaethoxide. Prehydrolysis promoted the development of polycrys-talline LiNbO3 films, whereas nonhydrolysis produced solid-state epitaxial growth of LiNbO3 films on sapphire substrates. Although the films looked smooth after annealing at 400°C, the morphology of the films changed, depending on substrates and precursors, due to grain growth at high annealing temperature. Prehydrolysis of the alkoxides caused a decrease in the temperature at which grain growth occurred, whereas the film prepared from the nonhydrolyzed precursor on a sapphire substrate showed denser texture and contained abnormally large domains that appeared to be single phase.

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SrBi2Ta2O9 thin films grown by MOCVD using a novel double metal alkoxide precursor

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00635-1 ◽

2000 ◽

Vol 209 (4) ◽

pp. 1009-1012 ◽

Cited By ~ 9

Author(s):

Dong Suk Shin ◽

Hoon Sang Choi ◽

Yong Tae Kim ◽

In-Hoon Choi

Keyword(s):

Thin Films ◽

Metal Alkoxide ◽

Alkoxide Precursor

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Rutile to anatase phase transition induced by N doping in highly oriented TiO2 films

Physical Chemistry Chemical Physics ◽

10.1039/c6cp04003a ◽

2016 ◽

Vol 18 (35) ◽

pp. 24722-24728 ◽

Cited By ~ 8

Author(s):

Andrew C. Breeson ◽

Gopinathan Sankar ◽

Gregory Kia Liang Goh ◽

Robert G. Palgrave

Keyword(s):

Thin Films ◽

Phase Transition ◽

Spin Coating ◽

Anatase Phase ◽

Precursor Solution ◽

Tio2 Films ◽

Titanium Alkoxide ◽

N Doping ◽

Alkoxide Precursor

Highly oriented TiO2 thin films were deposited onto Al2O3(0001), SrTiO3(001), and LaAlO3(001) substrates by spin coating a titanium alkoxide precursor solution followed by annealing.

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Growth of Lanthanum Oxide Thin Films by Liquid Injection MOCVD Using a Novel Lathanum Alkoxide Precursor

Chemical Vapor Deposition ◽

10.1002/cvde.200304164 ◽

2004 ◽

Vol 10 (1) ◽

pp. 13-17 ◽

Cited By ~ 29

Author(s):

H.C. Aspinall ◽

J. Gaskell ◽

P.A. Williams ◽

A.C. Jones ◽

P.R. Chalker ◽

...

Keyword(s):

Thin Films ◽

Lanthanum Oxide ◽

Oxide Thin Films ◽

Liquid Injection ◽

Alkoxide Precursor

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Sol-gel synthesis of textured lanthanum titanate thin films

Journal of Materials Research ◽

10.1557/jmr.2003.0046 ◽

2003 ◽

Vol 18 (2) ◽

pp. 357-362 ◽

Cited By ~ 12

Author(s):

Mary M. Sandstrom ◽

Paul Fuierer

Keyword(s):

Thin Films ◽

Sol Gel ◽

Precursor Solution ◽

Solution Concentration ◽

Optical Measurements ◽

Layered Perovskite ◽

Orientation Factor ◽

Anisotropic Structures ◽

Sol Gel Films ◽

Sol Gel Synthesis

Control over crystallographic orientation in thin films is important, particularly with highly anisotropic structures. Because of its ferroelectric nature, the layered perovskite La2Ti2O7 has interesting piezoelectric and electrooptic properties that may be exploited when films are highly textured. Sol-gel films with an orientation factor of greater than 95% were fabricated without relying on epitaxial (lattice-matching) growth from the substrate. Film orientation and crystallization were confirmed by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and optical measurements. The particle sizes in all precursor solutions were measured by dynamic light scattering experiments. Experimental results indicate that film orientation is a function of precursor solution concentration, size of the molecular clusters in the solution, and film thickness.

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Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

Journal of Materials Research ◽

10.1557/jmr.2000.0245 ◽

2000 ◽

Vol 15 (8) ◽

pp. 1702-1708

Author(s):

Ruichao Zhang ◽

Ren Xu

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Single Phase ◽

Chemical Vapor ◽

Deposition Process ◽

Thin Layers ◽

Metal Alkoxide ◽

Stoichiometry Control ◽

Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

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ITO Thin Films on Silicon Buffer by Sol Gel Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.514-516.1155 ◽

2006 ◽

Vol 514-516 ◽

pp. 1155-1160 ◽

Cited By ~ 1

Author(s):

Talaat Moussa Hammad

Keyword(s):

Thin Films ◽

Indium Tin Oxide ◽

Optical Transmission ◽

Sol Gel ◽

Precursor Solution ◽

Charge Carriers ◽

X Ray Diffraction ◽

X Ray ◽

Ito Thin Films ◽

Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

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Effect of Precursor Sol Ageing on Sol-Gel Derived Ruthenium Oxide Thin Films

MRS Proceedings ◽

10.1557/proc-606-211 ◽

1999 ◽

Vol 606 ◽

Cited By ~ 4

Author(s):

S. Bhaskar ◽

S. B. Majumder ◽

P. S. Dobal ◽

R. S. Katiyar ◽

A. L. M. Cruz ◽

...

Keyword(s):

Thin Films ◽

Room Temperature ◽

Annealing Temperature ◽

Sol Gel ◽

Ruthenium Oxide ◽

Precursor Solution ◽

Silicon Substrates ◽

Solution Deposition ◽

Precursor Material ◽

Afm Analysis

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.

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