scholarly journals Rutile to anatase phase transition induced by N doping in highly oriented TiO2 films

2016 ◽  
Vol 18 (35) ◽  
pp. 24722-24728 ◽  
Author(s):  
Andrew C. Breeson ◽  
Gopinathan Sankar ◽  
Gregory Kia Liang Goh ◽  
Robert G. Palgrave
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Spin Coating ◽  
Anatase Phase ◽  
Precursor Solution ◽  
Tio2 Films ◽  
Titanium Alkoxide ◽  
N Doping ◽  
Alkoxide Precursor

Highly oriented TiO2 thin films were deposited onto Al2O3(0001), SrTiO3(001), and LaAlO3(001) substrates by spin coating a titanium alkoxide precursor solution followed by annealing.

scholarly journals Reversible and repeatable phase transition at a negative temperature regime for doped and co-doped spin coated mixed valence vanadium oxide thin films

RSC Advances ◽  
2018 ◽  
Vol 8 (54) ◽  
pp. 30966-30977 ◽  
Author(s):  
Dipta Mukherjee ◽  
Arjun Dey ◽  
A. Carmel Mary Esther ◽  
N. Sridhara ◽  
D. Raghavendra Kumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Vanadium Oxide ◽  
Temperature Regime ◽  
Spin Coating ◽  
Mixed Valence ◽  
Negative Temperature ◽  
Coating Technique ◽  
Vanadium Oxide Thin Films ◽  
Co Doped

Smooth, uniform mixed valance vanadium oxide (VO) thin films are grown on flexible, transparent Kapton and opaque Al6061 substrates by the spin coating technique at a constant rpm of 3000.

Rutile to anatase phase transition in TiO2:Nb thin films by annealing in H2 atmosphere

2016 ◽  
Vol 16 (8) ◽  
pp. 826-829 ◽  
Author(s):  
T. Potlog ◽  
M. Dobromir ◽  
D. Luca ◽  
P. Onufrijevs ◽  
A. Medvids ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Anatase Phase

STRUCTURAL AND OPTICAL INVESTIGATIONS ON NANOCRYSTALLINE TiO2 THIN FILMS PREPARED BY SOL–GEL SPIN COATING TECHNIQUE

2010 ◽  
Vol 09 (04) ◽  
pp. 355-358 ◽  
Author(s):  
T. S. SENTHIL ◽  
M. THAMBIDURAI ◽  
N. MUTHUKUMARASAMY ◽  
R. BALASUNDARAPRABHU
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Anatase Phase ◽  
Sol Gel ◽  
Diffraction Method ◽  
Tio2 Thin Films ◽  
Nanocrystalline Tio2 ◽  
Glass Substrates ◽  
Coating Method ◽  
Different Temperatures

TiO2 thin films have been deposited onto well cleaned glass substrates by sol–gel spin coating method. The prepared TiO2 films have been annealed at different temperatures (350°C, 450°C and 550°C). The structural properties of the films have been studied using X-ray diffraction method and High Resolution Transmission Electron Microscope (HRTEM). The as-deposited films have been found to be amorphous in nature. The crystalline quality has been observed to improve with annealing temperature. The annealed TiO2 films have been found to exhibit anatase phase. The optical properties have been studied using transmittance spectrum.

scholarly journals Spin Coating Immobilisation of C-N-TiO2 Co-Doped Nano Catalyst on Glass and Application for Photocatalysis or as Electron Transporting Layer for Perovskite Solar Cells

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1029 ◽  
Author(s):  
Emile Salomon Massima Mouele ◽  
Siphelo Ngqoloda ◽  
Sara Pescetelli ◽  
Aldo Di Carlo ◽  
Mihaela Dinu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Harvesting ◽  
Spin Coating ◽  
Sol Gel ◽  
Perovskite Solar Cells ◽  
Volume Ratio ◽  
Tio2 Films ◽  
Wastewater Remediation ◽  
Nano Catalyst ◽  
Electron Transporting Layer

Producing active thin films coated on supports resolves many issues of powder-based photo catalysis and energy harvesting. In this study, thin films of C-N-TiO2 were prepared by dynamic spin coating of C-N-TiO2 sol-gel on glass support. The effect of spin speed and sol gel precursor to solvent volume ratio on the film thickness was investigated. The C-N-TiO2-coated glass was annealed at 350 °C at a ramping rate of 10 °C/min with a holding time of 2 hours under a continuous flow of dry N2. The C-N-TiO2 films were characterised by profilometry analysis, light microscopy (LM), and scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The outcomes of this study proved that a spin coating technique followed by an annealing process to stabilise the layer could be used for immobilisation of the photo catalyst on glass. The exposure of C-N-TiO2 films to UV radiation induced photocatalytic decolouration of orange II (O.II) dye. The prepared C-N-TiO2 films showed a reasonable power conversion efficiency average (PCE of 9%) with respect to the reference device (15%). The study offers a feasible route for the engineering of C-N-TiO2 films applicable to wastewater remediation processes and energy harvesting in solar cell technologies.

scholarly journals Effect of Aging Time on the Synthesis of Fe-doped TiO2 Thin Films by Spin Coating Method

2016 ◽  
Vol 1 ◽  
Author(s):  
Dahyunir Dahlan
Keyword(s):  
Thin Film ◽  
Aging Time ◽  
Spin Coating ◽  
Anatase Phase ◽  
Precursor Solution ◽  
Coating Process ◽  
Titanium Butoxide ◽  
Spin Coating Process ◽  
Spin Coating Method ◽  
Coating Method

<p>The synthesis of Fe-doped TiO<sub>2</sub> thin film using spin coating method was studied. Effects of aging time on the deposited thin film were investigated. Titanium butoxide (C<sub>16</sub>H<sub>36</sub>O<sub>4</sub>Ti) as a precursor solution was mixed with the FeCl<sub>3</sub>. Spin coating process was carried out on three types of precursor solution: (1) spin-coating process performed immediately after the precursor solution was made, (2) spin-coating process performed after solution was aged for 24 hours, (3) aged for 24 and (4) spin-coating after aging the precursor for 72 hours. Heating was carried out on the resulting thin film at temperature of 400 °C. The morphology of TiO<sub>2</sub> layers was characterized using Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). Elemental and phase composition of the films was determined using EDX and X-ray diffraction (XRD). We found that the best TiO<sub>2</sub> layer is obtained when spin-coating process is done after aging the precursor for 72 hours. The layer shows a more uniform particle distribution on the substrate and a more monodisperse particle size dominated by the anatase phase.</p>

A novel route for the synthesis of Sr1−xBaxNb2O6 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2404-2407 ◽  
Author(s):  
A. Kashani ◽  
M.S. Tomar ◽  
E. Dayalan
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Precursor Solution ◽  
Crystalline Material ◽  
Silicon Substrates ◽  
Silicon Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Niobium Ethoxide

Stoichiometric Sr1−xBaxNb2O6 (SBN) powder and thin films were prepared by a chemical method. The starting materials were niobium ethoxide and the hydroxides of strontium and barium. Powders were obtained by evaporation of the precursor solution, and thin films were deposited by spin coating. Annealing temperature required to obtain complete conversion to the crystalline material was about 700 °C. Stoichiometric polycrystalline films of Sr1−xBaxNb2O6 were deposited on quartz and silicon substrates. Leakage current-voltage and the capacitance-voltage measurements on a metal/SBN/n-silicon structure show a diode-type characteristic.

MOCVD of TiO2 thin films from a modified titanium alkoxide precursor

2015 ◽  
Vol 212 (7) ◽  
pp. 1563-1570 ◽  
Author(s):  
Sun Ja Kim ◽  
Van-Son Dang ◽  
Ke Xu ◽  
Davide Barreca ◽  
Chiara Maccato ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Alkoxide ◽  
Tio2 Thin Films ◽  
Alkoxide Precursor

Effect of the Precursor Solution Concentration of CuI Thin Film Deposited by Spin Coating Method

2011 ◽  
Vol 364 ◽  
pp. 417-421
Author(s):  
Muhamad Nur Amalina ◽  
Muhammad Atiq Azman ◽  
Mohamad Mahmood Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Spin Coating ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Precursor Concentration ◽  
High Concentration ◽  
Spin Coating Method ◽  
Coating Method

In this research, the effect of precursor concentration of CuI thin film deposited by spin coating method was studied. The wide band gap p-type semiconductor CuI thin film was prepared by mixing the CuI powder with 50 ml of acetonitrile as a solvent. The CuI concentration varies from 0.05M to 0.5M. The speed for spin coating is 1000 rpm for 60 seconds. After the deposition the CuI thin films were annealed at 150°C. The result shows the CuI thin film properties strongly depends on its precursor concentration. Thickness between 33.65 nm - 441.25 nm was obtained as the concentration increased. The increment of thickness affected the electrical property with resistivity of about 10-6 Ω.cm and 101 Ω.cm was observed for all the CuI thin films. For optical properties, the transmittance decreased with high concentration as high amount of CuI particle were observed in the thin films. From the transmittance, the absorption coefficient of 10-6 m-1 and optical band gap of 3.10 and 3.50 eV for all the films were observed using Tauc’s plot.

Microstructure development of sol-gel derived epitaxial LiNbO3 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2564-2572 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Michael J. Cima ◽  
Paul C. McIntyre ◽  
Wendell E. Rhine
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Spin Coating ◽  
Film Growth ◽  
Intermediate Phase ◽  
Substrate Surface ◽  
Sol Gel ◽  
Precursor Solution ◽  
Epitaxial Films ◽  
Epitaxial Relationship

Film growth and microstructural evolution were investigated for sol-gel derived LiNbO3 thin films deposited on lattice-matched single-crystal substrates. Epitaxial LiNbO3 films of about 100 nm nominal thickness were prepared by spin coating a solution of the lithium niobium ethoxide on sapphire (0001) substrates and annealing at 400 °C or 700 °C in a humidified oxygen atmosphere. These films exhibited an epitaxial relationship with the substrate of the type LiNbO3 (0001) || α-Al2O3 (0001) and LiNbO3 [100] || α-Al2O3 [100] as determined by x-ray pole figure analysis. Transmission electron microscopy indicated the epitaxial films annealed at 400 °C consisted of slightly misoriented ∼5 nm subgrains and of numerous ∼10 nm enclosed pores. The microstructure and orientation development of these films was consistent with a heteroepitaxial nucleation and growth mechanism, in which epitaxial nuclei form at the substrate surface and grow upward into an amorphous and porous intermediate film: Epitaxial films annealed at 700 °C contained larger 150-200 nm subgrains and pinholes. Misorientations between adjacent subgrains appeared to be significantly smaller in films annealed at 700 °C than those in films annealed at 400 °C. Hydrolysis of the alkoxide precursor solution prior to spin coating promoted the development of polycrystalline films on single-crystal sapphire substrates. Infrared spectra and thermal analysis indicated that, independent of the degree of the solution hydrolysis, nucleation of LiNbO3 was immediately preceded by decomposition of an amorphous carbonate intermediate phase.

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