Effect of the perfluoroalkyl groups on the preparation of carbon-based transparent and conductive thin films from silylated graphite oxides

2011 ◽  
Vol 132 (10) ◽  
pp. 669-672 ◽  
Author(s):  
Yoshiaki Matsuo ◽  
Kenshiro Iwasa ◽  
Yosohiro Sugie ◽  
Hisanao Usami ◽  
Masayuki Kawaguchi
Carbon ◽  
2010 ◽  
Vol 48 (14) ◽  
pp. 4009-4014 ◽  
Author(s):  
Yoshiaki Matsuo ◽  
Kenshiro Iwasa ◽  
Yosohiro Sugie ◽  
Atsushi Mineshige ◽  
Hisanao Usami

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.


2006 ◽  
Vol 6 (7) ◽  
pp. 1939-1944 ◽  
Author(s):  
X. Yu ◽  
R. Rajamani ◽  
K. A. Stelson ◽  
T. Cui

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


2019 ◽  
Vol 30 (14) ◽  
pp. 12876-12887 ◽  
Author(s):  
Shah Fahad ◽  
Haojie Yu ◽  
Li Wang ◽  
Ahsan Nazir ◽  
Raja Summe Ullah ◽  
...  

2013 ◽  
Vol 538 ◽  
pp. 78-84 ◽  
Author(s):  
Sigitas Tamulevičius ◽  
Šarūnas Meškinis ◽  
Kęstutis Šlapikas ◽  
Andrius Vasiliauskas ◽  
Rimantas Gudaitis ◽  
...  

2021 ◽  
Vol 136 ◽  
pp. 106151
Author(s):  
Nutcha Khambunkoed ◽  
Saowalak Homnan ◽  
Atcharawon Gardchareon ◽  
Narupon Chattrapiban ◽  
Prayoon Songsiriritthigul ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document